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研究生:洪忠欽
研究生(外文):Jhong-CinHong
論文名稱:以基因演算法萃取太陽能電池特性參數並應用於非晶矽薄膜太陽能電池
論文名稱(外文):Extract Solar Cell Parameters by Using Genetic Algorithm and Apply to Amorphous Silicon Thin Film Solar Cell
指導教授:洪茂峰洪茂峰引用關係
指導教授(外文):Mau-Phon Hong
學位類別:碩士
校院名稱:國立成功大學
系所名稱:微電子工程研究所碩博士班
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2012
畢業學年度:100
語文別:中文
論文頁數:100
中文關鍵詞:太陽能電池基因演算法串聯電阻並聯電阻非晶矽
外文關鍵詞:solar cellGenetic Algorithmseries resistanceshunt resistanceSingle Diode Modelamorphous silicon
相關次數:
  • 被引用被引用:2
  • 點閱點閱:286
  • 評分評分:
  • 下載下載:0
  • 收藏至我的研究室書目清單書目收藏:0
一般針對太陽能電池之特性分析,大多著重在開路電壓、短路電流、填充因子及效率這四項基本特性的量測,相對之下較少研究針對IV 曲線做進一步探討。在本研究中,我們建立一套由太陽能電池IV曲線萃取特性參數之程式架構,分析的參數有光電流、飽和電流、串聯電阻、並聯電阻(導)以及理想因子,目的是希望藉由萃取以上參數,協助我們分析製程與結構尚可改進之處。此程式以套裝軟體MATLAB 2008 進行開發,使用基因演算法為求解架構,核心概念為太陽能電池Single Diode Model,萃取精確度以原始曲線與擬合曲線之間的Standard Deviation 為依據。以此程式萃取模擬曲線與實際量測曲線,原始曲線與擬合曲線之誤差小於3%,代表萃取結果相當接近正確值。最後應用於非晶系薄膜太陽能電池特性之探討與改善,藉由wxAMPS-1D 模擬與基因演算法萃取後證明在AZO 與p-a-SiC:H 之間插入一層p-uC-Si:H 後可改善接面特性並降低串聯電,最佳厚度7nm,與實際製程結果相近。
Usually, we identify solar cell characteristics by measuring four basic parameters - open circuit voltage、short circuit current、fill factor and efficiency, but seldom we analyze the IV curve. Actually we can get some useful details from IV curve to know how to improve structure or fabrication process of solar cells. In our dissertation, we developed a program which can extract solar cell parameters including photocurrent, saturation current, series resistance, shunt resistance (conductance) and ideal factor. The program was developed by MATLAB 2008, and we used Genetic Algorithm as a solution, incorporated with solar cell equivalent circuit Single Diode Model. Besides, we used standard deviation between original curve and fitted cure as criterion to estimate accuracy. After testing, the program could extract parameters with the standard deviation below 3%, this indicated that our program can function work well and
have good extraction. Finally, we connected the program with wxAMPS-1D, and applied to amorphous silicon solar cells TCO/p contact. We found that insertion layer p-uC-Si:H between AZO and p-a-SiC:H could improve front contact, and then reduce series resistance, and optimal thickness of p-uC-Si:H is 7nm. The simulation results are also identical to realistic process results.
摘要.........I
Abstract.........III
誌謝.........V
目錄.........VI
表目錄.........IX
圖目錄.........XI
第一章 緒論.........1
1-1 研究背景.........1
1-1-1 現今能源概況.........1
1-1-2 太陽能電池種類.........4
1-2 研究動機與目的.........7
1-3 論文架構.........9
第二章 基本理論.........10
2-1 太陽能電池理論.........10
2-1-1 太陽光譜介紹.........10
2-1-2 太陽能電池結構.........12
2-1-3 太陽能電池工作原理.........13
2-1-4太陽能電池特性方程式.........15
2-2 基因演算法理論.........27
2-2-1 基因演算法簡介.........27
2-2-2 基因演算法架構.........29
第三章 程式架構開發.........37
3-1 定義問題.........37
3-2 建立開發平台與量測步驟.........37
3-2-1 MATLAB 2008 介面.........37
3-2-2 量測機台與步驟.........39
3-3 建立太陽能電池等效模型.........40
3-4 建立演算法架構.........42
3-4-1 解型式定義.........44
3-4-2 族群初始化規則.........45
3-4-3 適應函數定義.........52
3-4-4 演算法規格設定.........56
3-5 功能驗證.........63
3-5-1 自我驗證.........63
3-5-2 實際元件萃取.........74
3-6 結論.........78
第四章 應用於非晶矽薄膜太陽能電池.........79
4-1 AMPS-1D介紹.........79
4-2 基本理論.........82
4-3 實驗流程.........87
4-4 結果討論.........91
第五章 結論.........97
參考文獻.........99
附錄A 程式碼.........a
A.1 程式簡介.........a
A.2 ga_solar.m.........b
A.3 nextpopu.m.........d
A.4 plot.m.........f
A.5 solar_fitness.m.........g
A.6 solve_eq.m.........h
A.7 RangeN.m.........h
A.8 chose.m.........i
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