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研究生:劉建麟
研究生(外文):Jian-LinLiu
論文名稱:利用電鍍方法製備二硒化銅銦鋁薄膜之研究
論文名稱(外文):A study of CuInAlSe2 thin film fabricatedby electrodeposition technique
指導教授:洪茂峰洪茂峰引用關係
指導教授(外文):Mau-Phon Houng
學位類別:碩士
校院名稱:國立成功大學
系所名稱:微電子工程研究所碩博士班
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2012
畢業學年度:100
語文別:中文
論文頁數:90
中文關鍵詞:二硒化銅銦鋁電鍍
外文關鍵詞:CIASelectrodeposition
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本論文以製程方法簡單且成本低廉的電鍍方法鍍製二硒化銅銦鋁(CuInAlSe2
電鍍CIAS使用定電壓電鍍法進行實驗: )太陽能電池之主吸收層。本實驗採取四元共電鍍的方法製備CIAS薄膜,並藉由改變不同的環境參數鍍製出Cu:(In+Al):Se比例1:1:2,且表面形貌平坦,結晶品質良好的薄膜。
使用循環伏安法選定鋁還原電位的範圍後,調變電壓抓取最適合電鍍CIAS的電壓值。再依序調整溶液中個別離子濃度。定電壓電鍍法可以製備出成分比例良好的薄膜,缺點是附著力不佳。
在定電壓電鍍環境下於溶液中添加附著劑-十二烷基硫酸(SDS),得到附著力良好、表面平坦以及二次相減少的薄膜。電鍍完成的薄膜利用SEM、EDS、XRD、Raman、UV-VIS等儀器作量測分析。此研究中,我們成功以電鍍法製備出比例良好、表面平坦、鋁含量高的CIAS薄膜。
並分別調變銦或鋁的濃度,均可以製備出鋁與銦含量不同比例的CuInAlSe2薄膜,量測不同x(Al/Al+In)的薄膜光能隙的改變。
In this study, the thin films of CuInAlSe2 solar cell were grown by using electrodeposition technique. In this study, CuInAlSe2 were fabricated by co-electrodeposition, and the composition ratio was excepted to come to
Cu:(In+Al):Se=1:1:2 by changing different parameter,the thin films of CuInAlSe2 with smooth morphology and great crystal quality.
First of all, we chose the reductive voltage of aluminum by Cyclic Voltammetry, and we changed the voltage to find the appropriate voltage of producing CuInAlSe2.And then, we changed the concentration of different element. Great composition of thin films were produced, but adhesion of thin films were poor.
The great adhesion of thin films with smoth morphology and few secondary were produced after the addition of SDS. The properties of thin films deposited from the electroplated system were investigated by various techniques, including SEM、EDS、XRD、Raman and UV-VIS, and the analysis results are discussed in the following chapter. In this study, we succeed to fabricate thin films of CuInAlSe2 with great composition、smoth morphology and enrichment of Al.
Eventually, two set of thin films with different ratio of Al and In were prepared, and to measure the change of band gap with the change of x(Al/Al+In).
摘要 I
Abstract III
表目錄 IX
圖目錄 X
第一章緒論 1
1.1太陽能的需求 1
1.2太陽能電池簡介 2
1.3 太陽能電池元件結構 6
1.3.1鉬玻璃基板 6
1.3.2 CuInSe2(CuInAlSe2 )主吸收層 6
1.3.3 CdS緩衝層 7
1.3.4 AZO透明導電膜透光層及抗反射層 7
1.3.5 Al前電極 8
1.4研究動機與目標 8
第二章理論基礎 11
2.1 太陽能源介紹 11
2.2太陽能電池原理 14
2.2.1 半導體原理 14
2.2.2 電路模型 16
2.2.3 特性與效率 19
2.3常見製備方法簡介 21
2.3.1 濺鍍(Sputtering) 21
2.3.2 蒸鍍(Evaporation) 21
2.3.3 噴塗(spray pyrolysis) 22
2.3.4 分子束磊晶(Molecular Beam Epitoxy,MBE) 22
2.3.5 電鍍(Electrodeposition)23
2.3.6 硒化(Selenization) 23
2.4電化學簡介 25
2.4.1 電化學原理 25
2.4.2 電鍍裝置 26
2.4.3 脈衝電壓電鍍法 29
2.4.4 循環伏安法 30
第三章實驗方法與量測方法 33
3.1實驗流程步驟 33
3.1.1 清洗鉬玻璃基板 33
3.1.2 電鍍CIAS主吸收層 35
3.2 實驗藥品與材料 36
3.3 實驗參數設定 37
3.3.1 定電壓電鍍CIAS參數調變 37
3.3.2 添加SDS電鍍CIAS參數調變 37
3.4 量測分析儀器 38
3.4.1 場發射掃描式電子顯微鏡(FE-SEM) 38
3.4.2 能量分析光譜儀(EDS) 38
3.4.3 X光繞射儀(XRD) 39
3.4.4 拉曼光譜儀(Raman) 41
3.4.5 二次離子質譜儀(SIMS) 42
3.4.6 α-step 膜厚量測儀 42
3.4.7 紫外光-可見光光譜儀(UV-VIS) 43
第四章結果與討論 46
4.1定電壓電鍍CIAS主吸收層薄膜 46
4.1.1鋁的循環伏安法分析 46
4.1.2電壓對於薄膜之影響 48
4.1.3 改變溶液銦濃度控制薄膜鋁含量 51
4.1.4 不同鋁含量薄膜的XRD量測 57
4.2 添加SDS附著劑定電壓電鍍CIAS主吸收層薄膜 60
4.2.1 加入SDS對電鍍的影響 60
4.2.2 不同SDS濃度對薄膜的影響 62
4.2.3 銅離子濃度的調變 66
4.2.4 電鍍時間的調變 70
4.2.5 In離子濃度的調變 73
4.2.6 Al離子濃度的調變 77
4.2.7 光能隙量測 83
第五章結論 87
參考文獻 88
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