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研究生:郭訊榮
研究生(外文):Hsiun-RongKuo
論文名稱:利用氮化矽奈米管提升氮化鎵發光二極體光析出之研究
論文名稱(外文):Enhanced Light Output of GaN-Based LEDs with Surface Roughened by Si3N4 Nanotube Arrays
指導教授:王水進
指導教授(外文):Shui-Jinn Wang
學位類別:碩士
校院名稱:國立成功大學
系所名稱:微電子工程研究所碩博士班
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2012
畢業學年度:100
語文別:中文
論文頁數:56
中文關鍵詞:氮化矽奈米管氮化鎵發光二極體
外文關鍵詞:GaNLEDsSurface RoughenedSi3N4Nanotube Arrays
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  • 收藏至我的研究室書目清單書目收藏:3
提升氮化鎵系列發光二極體之發光效率,採用水熱法(hydrothermal method, HTG)成長氧化鋅奈米線(ZnO nanowires, ZnO NWs),元件表面來達到粗化目的。實驗結果顯示,利用此一技術水平結構LED之光輸出功率(light output power, Lop)於注入電流350 mA下可獲得14.89%之提升。
此外,本研究亦提出整合水熱法成長ZnO NWs與PECVD沈積Si3N4技術,以及利用ICP乾式蝕刻等技術製備Si3N4奈米管(Si3N4 NTs)結構。為了更進一步提升發光效率,本研究利用氧化鋅奈米線當做模板,製備Si3N4奈米管於LED表面來達到粗化的效果,Si3N4奈米管有高達85%的穿透率及獨特的光導性質。我們發現Si3N4奈米管之LED與沒有成長氧化鋅奈米線之LED (regular LED)相比,在350 mA注入下,光輸出功率增加25.23%。
To further improve light output power of LEDs, a cost-effective and efficient surface roughening technology using Hydrothermal Method to grow ZnO nanowires (ZnO NWs) was proposed and demonstrated. Experimental results revealed that the proposed structure could efficiently enhance light extraction efficiency for LEDs. Compared with the regular LEDs, 14.89% in average improvement in the light output power at 350 mA has been obtained from the ones with ZnO NWs.
In addition, through a deposition of thin Si3N4 film to sheathe the hydrothermally grown (HTG) ZnO nanowires arrays (ZnO NW arrays), the high transparent Si3N4 nanotube arrays (Si3N4 NT arrays) were fabricated. The prepared Si3N4 NT arrays with average inner/outer diameters and length of around 350/450 nm and 2 μm, respectively, exhibited a superior transmittance of 85% in visible light spectrum. In addition, surface roughness and light guiding using Si3N4 NT arrays on GaN-based LEDs showed an additional improvement in the light output of about 25.23% at 350 mA as compared to those of regular LEDs, suggesting the effectiveness and promising applications of the proposed Si3N4 NT arrays in optics and optoelectronics devices.
中文摘要 i
英文摘要 iii
誌 謝 v
目錄 vi
表 目 錄 ix
圖 目 錄 x
第一章、導論 1
1-1、發光二極體之原理與發展 1
1-2、研究動機 7
第二章、GaN元件結構及遇到的挑戰 9
2-1、藍光二極體之發展 9
2-2、水平式和垂直式結構 11
2-3、發光二極體之發光效率與出光技術 13
第三章、簡介以水熱法成長氧化鋅奈米線 21
3-1、以水熱法成長氧化鋅奈米線 21
3-2、氧化鋅材料簡介 21
3-3、水熱法成長(hydro-thermal growth, HTG)氧化鋅奈米線之演進與製程方法 23
第四章、實驗流程、分析方法與設備 29
4-1、前言 29
4-2、實驗材料及設備 30
4-2-1、實驗材料 30
4-2-2、實驗設備 30
4-3、RCA clean 流程 37
第五章、具Si3N4奈米管表面粗化結構之LED元件研製 40
5-1、LED元件製備 40
5-2、Si3N4 奈米管製備及分析 41
5-2-1、Si3N4奈米管的製備流程 41
5-2-2、電子顯微鏡(SEM)分析 43
5-2-3、氧化鋅奈米線及Si3N4奈米管之晶型結構分析(TEM, SAED and EDS) 44
5-3、穿透率及光導特性分析 47
5-4、Si3N4 奈米管製備於LED光電特性比較 49
第六章、結論與未來工作 51
6-1、結論 51
6-2、未來工作 52
參考文獻 53
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