臺灣博碩士論文加值系統

本實驗搭配低氫含量的氧化矽於Indium Gallium Zinc Oxide (IGZO)薄膜電晶體，已被証實有良好的薄膜電晶體特性由X-ray繞射量測分析可知，本研究中所使用的所有製程參數都會使得IGZO薄膜呈現非晶相的一個晶格結構，為較佳的IGZO薄膜結構。除此之外，也會使得IGZO薄膜在可見光範圍內，平均透光率都能達80%以上，能夠滿足透明電晶體的一個標準需求。而經由能量散射光譜分析分析，IGZO薄膜初期氧含量比例66.23%，製程中以低氫含量的氧化矽與IGZO薄膜搭配，主要減少在製程中氫原子與IGZO薄膜裡氧原子產生置換，避免IGZO薄膜特性由半導體變成導體，元件完成後再驗證IGZO氧含量比例58.1%，確認低氫含量氧化矽對於IGZO氧含量影響是將可以被降到最低的。
此外，透過原子力顯微鏡量測分析，可以得知低氫含量的氧化矽薄膜表面平整，其表面粗糙度Rrms值 1.52 nm，適合IGZO薄膜的成長，驗證了IGZO於低氫含量的氧化矽薄膜上的高載子傳輸特性。其元件的具有相當高的場效載子遷移率(13.75 cm2/Vs)、低臨界電壓(0.125 V)，期待未來能將其應用到AMOLED的相關元件上。

Amorphous IGZO-based thin film transistors(TFTs) with a low hydrogen content silicon oxide (SiOx) as gate insulator layer are demonstrated. The IGZO film processed in this study are amorphous crystalline revealed by X-ray diffraction measurements and exhibit over 80% of transparency in the visible light range. During the deposition process of insulator such as SiOx or SiNx, the oxygen of IGZO thin film will be substituted by the high content of hydrogen, leading to the transformation of IGZO thin film from semiconductor to conductor. To prevent hydrogen in substitution for oxygen, low hydrogen content silicon oxide was applied in IGZO thin film transistor. From EDS analysis, the original oxygen content of IGZO thin film was measured to be 66.23%. After low hydrogen content silicon oxide deposition process, 58.1% of oxygen is remained in IGZO thin film. This proves that low hydrogen content silicon oxide has the minimum impact on the oxygen content of IGZO.
The smooth surface (1.52nm) of IGZO thin film confirmed by AFM measurement could facilitate IGZO thin film deposition, leading to the high mobility (13.75 cm2/Vs), low threshold voltage (0.125V). It is expected that the presented device could be applied to AMOLED related device in the future.

中文摘要 I
英文摘要 III
誌謝 IV
目錄 V
表目錄 IX
圖目錄 X
第一章 緒論001
1.1 前言001
1.2 透明氧化物薄膜電晶體002
1.3 研究動機003
第二章 文獻與理論回顧006
2.1 非晶矽氧化薄膜電晶體的基本結構006
2.2 a-InGaZnO(IGZO)材料簡介009
2.3 a-IGZO各元素扮演的角色對電性之影響010
2.4 非晶氧化物的傳導機制012
2.5 a-IGZO薄膜電晶體的操作原理014
2.6 各項重要參數016
2.6.1 載子移動率(Mobility)016
2.6.2 臨界電壓(Threshold voltage)017
2.6.3 次臨界擺幅(Subthreshold swing)017
2.6.4 開關電流比(On/Off current ratio)018
2.6.5 接觸阻抗(Contact Resistance)018
第三章 設備原理及實驗流程022
3.1 實驗設備原理022
3.1.1 物理氣相沉積(Physical Vapor Deposition)022
3.1.2 化學氣相沉積(Chemical Vapor Deposition)024
3.1.3 SiOx、SiNx薄膜之CVD沉積原理與製程反應化學式026
3.1.4 退火烤箱設備028
3.2 實驗材料029
3.3 實驗步驟032
3.3.1 玻璃清洗032
3.3.2 閘極(Gate electrode)薄膜製作032
3.3.3 絕緣層(Gate Insulator layer)SiOx薄膜製作032
3.3.4 半導層(Semiconductor layer)IGZO薄膜製作032
3.3.5 蝕刻停止層(Etch Stop layer)SiOx薄膜製作033
3.3.6 保護層(Passivation layer)SiNx薄膜製作033
3.3.7 透明電極ITO薄膜製作033
3.4 量測儀器原理038
3.4.1 X-ray繞射量測(X-ray diffraction)038
3.4.2 紫外光與可見光光譜分析038
3.4.3 原子力顯微鏡量測(Atomic Force Microscopy)040
3.4.4 X光電子能譜分析040
3.4.5 霍爾量測041
3.4.6 能量散射光譜分析(Energy Dispersive Spectrometer)043
第四章 量測結果與討論047
4.1 結晶型態分析047
4.1.1 IGZO靶材X-ray繞射光譜分析047
4.1.2 IGZO薄膜X-ray繞射光譜分析048
4.1.3 SiNx與SiOx薄膜X-ray繞射光譜分析049
4.2 a-IGZO薄膜光穿透率分析051
4.3 表面型態分析054
4.3.1 a-IGZO表面型態054
4.3.2 絕緣層薄膜(SiNx與SiOx)表面型態054
4.4 元件電性量測059
4.4.1 SiOx(SiH4:N2O=1:3)和熱退火200℃電性059
4.4.2 SiOx(SiH4:N2O=1:3)和熱退火250℃電性060
4.4.3 SiOx(SiH4:N2O=1:100)和熱退火250℃電性060
4.4.4 SiOx(SiH4:N2O=1:1000)和熱退火250℃電性060
4.5 能量散射光譜分析結果068
4.6 分析與驗證070
4.6.1 重複量測穩定性070
4.6.2 通道長度與電流關係072
第五章 結論074
5.1 結論 074
5.2 未來展望075
參考文獻 079

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