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研究生:李宗儐
研究生(外文):Tsung-PinLee
論文名稱:氧化鋅基透明導電薄膜於有機發光二極體之應用
論文名稱(外文):Applications of ZnO-based transparent conducting thin films on Organic light emitting diodes (OLEDs)
指導教授:朱聖緣朱聖緣引用關係
指導教授(外文):Sheng - Yuan Chu
學位類別:碩士
校院名稱:國立成功大學
系所名稱:電機工程學系專班
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2012
畢業學年度:100
語文別:中文
論文頁數:100
中文關鍵詞:氧化鋅
外文關鍵詞:ZnO
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氧化鋅為一種具有纖鋅礦結構之寬能隙半導體,且具有顯著的c軸優先成長取向及透明性並擁有明顯的壓電及壓光效應,因此被廣泛地應用在光電材料方面。一般氧化鋅的電阻值偏高,其導電係數主要受制於氧空缺與鋅間隙原子,故氧化鋅之導電率及透光率深受製備參數所影響。因此日後發展出摻雜鋁形成AZO新材質,藉以改善光電特性並進而取代傳統ITO材料。
  為了研究具有特殊結晶性的氧化鋅薄膜的影響性及應用,因此將氧化鋁薄膜沉積於玻璃基板及沉積於已披覆氧化鋅薄膜的玻璃基板上,以做為比較。並探討射頻功率、反應室壓力及薄膜厚度對於實驗結果之影響,最後並將中介層ZnO運用在OLED上,藉以改善整體光電特性。

Zinc oxide as a wurtzite structure of the wide band gap semiconductor has a significant c-axis growth orientation, transparency and piezoelectric pressure light effect which is widely used in optoelectronic materials. The resistivity of the zinc oxide is generally high and its conductivity is mainly governed by the oxygen vacancies and interstitial zinc atoms. The electrical conductivity and light transmittance of zinc oxide is influenced by the preparation parameters. Therefore, Aluminum doped ZnO developed to improve the optical and electrical properties and thus replacing the traditional ITO material recently.
In order to study the impact and applications of this special crystalline ZnO thin films, ZnO:Al film deposited on the glass substrate and deposition has been coated with zinc oxide thin films to explore the RF power, chamber pressure and film thickness as the experimental parameter tested, the final and intermediary layer of ZnO is used in OLED in order to improve the overall optical and electrical properties.

中文摘要 ...............................................1
Abstract ..............................................2
致謝....................................................3
目錄....................................................4
表目錄..................................................8
圖目錄..................................................9
第一章 緒論..............................................12
1-1 前言................................................12
1-2 研究動機.............................................13
1-3 論文架構.............................................13
第二章 理論與文獻回顧......................................15
2-1 薄膜沉積.............................................15
2-1-1 薄膜沉積原理........................................15
2-1-2 薄膜沉積方法........................................16
2-1-3 射頻濺鍍系統........................................16
2-2 電漿.................................................18
2-2-1 電漿原理...........................................18
2-2-2 電漿能量...........................................19
2-2-3 電漿應用...........................................20
2-3 透明導電膜...........................................20
2-3-1 金屬薄膜...........................................21
2-3-2 金屬氧化物半導體膜..................................22
2-4 氧化鋅薄膜的結構和特性.................................23
2-4-1 氧化鋅薄膜摻雜III 族元素之電學性質....................24
2-4-2 氧化鋅薄膜摻雜III 族元素之光學性質....................25
2-5 ITO透明導電薄膜.......................................26
2-6 有機發光二極體的基本原理和結構..........................27
2-6-1 有機發光二極體的基本結構.............................27
2-6-2 有機發光二極體的基本原理.............................28
2-6-3 有機發光二極體的發展................................28
2-7 軟性基板材料的相關特性比較.............................30
2-7-1 超薄玻璃基板的發展現況...............................31
2-7-2 塑膠基板材料的發展現況...............................31
2-8 箱形圖(Box-plot)...................................32
第三章 實驗過程與研究方法..................................39
3-1 實驗材料.............................................39
3-1-1 基板材料...........................................39
3-1-2 靶材材料...........................................39
3-1-3 基板清洗溶劑及實驗氣體...............................39
3-2 AZO靶材配置..........................................40
3-3 基板的選擇及清洗......................................40
3-4 樣品的準備及實驗過程...................................41
3-4-1 真空濺鍍之實驗步驟...................................41
3-4-2 真空蒸鍍之實驗步驟...................................41
3-5 影響氧化鋅薄膜成長的因素...............................42
3-6 AZO薄膜結構的品質分析..................................43
3-6-1 X光粉末繞射儀(X-ray powder diffract meter).........43
3-6-2 掃描式電子顯微鏡(SEM,Scanning Electron Microscope).46
3-6-3 原子力顯微鏡(AFM) ...................................50
3-6-4 紫外光-可見光光譜儀 ( UV-Visible spectrophotometer )..52
3-6-5 電性分析儀器.......................................53
3-7 OLED單體沉積速率之測定...............................54
3-8 OLED多層元件之電流、電壓與亮度關係曲線圖量測............54
第四章 結果與討論........................................61
4-1 前言與實驗固定變因...................................61
4-2 不同基板(PES與Glass)之影響...........................62
4-2-1 前言..............................................62
4-2-2 電性分析...........................................62
4-2-3 總結..............................................63
4-3 成長壓力之影響.......................................67
4-3-1 前言..............................................67
4-3-2 電性分析...........................................67
4-3-3 晶體結構分析與表面形態分析...........................68
4-3-4 光學性質分析........................................69
4-3-5 總結...............................................69
4-4 射頻功率之影響........................................75
4-4-1 前言..............................................75
4-4-2 電性分析...........................................75
4-4-3 XRD繞射分析........................................76
4-4-4 光學性質分析........................................76
4-4-5 總結...............................................76
4-5 薄膜厚度之影響........................................83
4-5-1 前言...............................................83
4-5-2 電性分析...........................................83
4-5-3 XRD繞射分析........................................84
4-5-4 光學性質分析........................................84
4-5-5 總結...............................................84
4-6 AZO玻璃運用於OLED之陽極...............................90
4-6-1 前言...............................................90
4-6-2 AZO與ITO特性比較....................................90
4-6-3 AZO與AZO/ZnO運用於OLED陽極..........................90
第五章 結論與未來展望......................................95
5-1 射頻功率相對應於薄膜的影響..............................95
5-2 濺鍍厚度相對應於薄膜的影響..............................95
5-3 成長壓力相對應於薄膜的影響..............................96
5-4 基板材質相對應於薄膜的影響..............................96
5-5 ZnO中介層相對應於薄膜的影響.............................96
5-6 AZO薄膜運用於OLED陽極..................................96
5-7 未來研究建議...........................................96
參考文獻..................................................97

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