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研究生:周琮洺
研究生(外文):Tsung-MingChou
論文名稱:金屬接觸轉印微影製程應用於高頻表面聲波元件之製作與實驗量測
論文名稱(外文):Metal Contact Print Photolithography for Fabrication of High Frequency Surface Acoustic Wave Device and Experimental Measurement
指導教授:李永春李永春引用關係
指導教授(外文):Yung-Chun Lee
學位類別:碩士
校院名稱:國立成功大學
系所名稱:機械工程學系碩博士班
學門:工程學門
學類:機械工程學類
論文種類:學術論文
論文出版年:2012
畢業學年度:100
語文別:中文
論文頁數:67
中文關鍵詞:金屬接觸轉印微影高頻表面聲波元件金屬電極厚度
外文關鍵詞:metal contact print photolithographyhigh frequency SAW deviceelectrode thickness
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本文成功地使用改良式的金屬接觸轉印微影製程,製作最小線寬500 nm 的高頻表面聲波元件,並量測元件的頻率響應,量測到的最高工作頻率約為1.91 GHz。
本文使用的接觸式金屬轉印,首先利用h-PDMS軟性模仁的材料特性,完整地將金屬圖案轉印至壓電基板上的光阻層;之後再將轉印到壓電基板的金屬圖案作為一金屬光罩,以黃光微影的標準製程技術定義具次微米等級特徵的表面聲波元件,金屬轉印技術可輕易達到次微米甚至奈米等級的特徵尺寸。以轉印之金屬層作為光罩使用,由於金屬是直接貼附於光阻層之上,可減少光學繞射現象,因此可以精準定義次微米與奈米等級的圖形。
另一方面,本文量測高頻表面聲波的頻率響應,得到中心頻率最高1.91 GHz的單埠表面聲波諧振器,並嘗試增加元件金屬電極厚度,以觀察在2 GHz的高頻下,金屬電極厚度與波長比值對元件頻率響應的影響,最後再使用模態耦合(Coupling of Mode,COM)理論進行理論分析與實驗驗證。

This thesis describes a new method to fabricate high frequency surface acoustic wave (SAW) devices. With the new method known as metal contact printing photolithography (MCPP), we can fabricate SAW devices with a 500 nm line-width, and the central frequency of the fabricated SAW devices can reach 1.91 GHz.
The MCPP method first transfers a patterned metal film from a h-PDMS soft mold to the surface of photo-resist (PR) layer deposited on a piezoelectric substrate. The transferred metal pattern is subsequently used as a photo-mask for UV exposure. Therefore, SAW devices with a metal pattern on a piezoelectric substrate can be fabricated following standard photolithography approaches.
In the mean time, a number of SAW devices with different metal film thicknesses have been prepared and their characteristics and performance have been experimentally measured. The influence of film-thickness to wavelength ratio on the electrical behaviors of the SAW devices operated around 2 GHz are then experimentally determined. Finally, theoretical analysis based on coupling of mold (COM) method is carried out and compared with experimental results.

摘要.......................................................I
Abstract.................................................II
致謝.....................................................III
目錄......................................................IV
圖目錄....................................................VII
表目錄.....................................................XI
第一章 導論.................................................1
1-1 研究目的與背景...........................................1
1-2 文獻回顧................................................2
1-2.1 表面聲波元件文獻回顧....................................2
1-2.2 奈米壓印技術介紹.......................................4
1-3 本文架構...............................................10
第二章 表面聲波元件設計......................................11
2-1 表面聲波元件工作原理.....................................11
2-1.1 壓電效應.............................................11
2-1.2工作原理..............................................12
2-2元件設計................................................13
2-2.1 壓電基板.............................................13
2-2.2 反射柵...............................................14
2-2.3 交指叉狀換能器........................................17
2-2.4 延遲距離.............................................19
2-2.5 金屬比與金屬電極厚度...................................20
2-3 模態耦合理論............................................22
2-3.1 模態耦合方程式........................................22
2-3.2 P矩陣參數............................................25
2-3.3反射係數與實際波速......................................27
2-4 阻帶邊緣頻率與模態耦合理論參數計算.........................29
第三章 實驗流程.............................................32
3-1 模仁製備...............................................32
3-1.1 矽模仁製備...........................................34
3-1.2 軟性模仁翻製 ..........................................36
3-2 金屬接觸轉印微影製程.....................................41
3-2.1 金屬接觸轉印 ..........................................42
3-2.2 微影製程.............................................44
3-2.3 金屬電極成長..........................................46
3-3 實驗結果與討論 ..........................................48
3-3.1 金屬轉印結果........................................ 48
3-3.2 黃光微影結果 ..........................................50
3-3.3 電極舉離結果..........................................50
第四章 實驗量測結果與模擬分析.................................54
4-1 儀器架構與量測方法.......................................54
4-2 量測結果與討論 ..........................................57
第五章 結論與未來展望........................................62
5-1 結論..................................................62
5-2 未來展望...............................................63
參考文獻...................................................65


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