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研究生:許罌友
研究生(外文):Ying-YouHsu
論文名稱:抗靜電高功率垂直式結構氮化鎵發光二極體
論文名稱(外文):Electrostatic Discharge Properties of High Power Vertical Structure GaN Light Emitting Diodes
指導教授:許進恭
指導教授(外文):Jinn-Kong Sheu
學位類別:碩士
校院名稱:國立成功大學
系所名稱:光電科學與工程學系
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2012
畢業學年度:100
語文別:中文
論文頁數:85
中文關鍵詞:發光二極體晶圓鍵結雷射剝離靜電放電
外文關鍵詞:LEDwafer bondingLaser lift-offelectrostatic discharge
相關次數:
  • 被引用被引用:4
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  • 下載下載:20
  • 收藏至我的研究室書目清單書目收藏:3
本論文主要以高功率垂直式結構發光二極體,與傳統水平式結構元件比較其光電特性。垂直式結構元件以晶圓鍵結(Wafer bonding),以及雷射剝離(Laser lift-off)之製程,將元件轉置於導熱與導電性良好之矽基板。在電流350mA注入下,垂直式結構元件之順偏電壓值較水平式結構降低,且其光輸出功率(Light output power)、外部量子效率(External Quantum Efficiency,EQE)、以及光電轉換效率(Wall plug efficiency,WPE)皆較水平式結構分別提升26.43%、25.84%、28.9%,由此可得垂直式結構之光電特性較傳統水平式結構元件提升。另外由於垂直式結構利於電流擴散,因此於大電流注入下不易有熱能之堆積,故此結構較傳統水平式元件更適合發展高功率以及大尺寸之發光二極體。
為了提升發光二極體操作之穩定性,因此於垂直式元件改變其絕緣保護層,以及電流阻障層之結構,以提升其抗靜電特性。元件整面覆蓋絕緣保護層,並將電流阻障層由n型電極所在位置,向外延伸至元件邊緣以及走道的這類結構,其抗靜電特性較其它結構提升,以至於此種垂直式結構元件之操作穩定性以及可靠度得以提升。

This thesis aims to compare optoelectronic characteristics of high power vertical structure LED with conventional lateral structure LED. The vertical structure LED was bonded on silicon substrate by wafer bonding and Laser lift-off process. As compared to lateral structure LED under an injection current of 350mA,the forward voltage drop of vertical structure LED was decreased and the light output power (LOP)、external quantum efficiency (EQE)、Wall plug efficiency(WPE) were enhanced by 26.43%、25.84%、28.9% ,respectively. Hence it appears that the optoelectronic characteristic of vertical structure LED was promoted than lateral structure LED.
In addition, due to the vertical structure was conductive to the current spreading, the heat energy wouldn’t accumulated in high current injection. Therefore, the vertical structure was more suitable to develop high power and large size LED than conventional lateral structure.
In order to promote the stabilities of LED operation,we changed the passivation layer and current blocking layer of vertical structure to improve its electrostatic discharge (ESD) characteristics. Covering the entire surface of vertical structure LED by passivation layer and extended the current blocking layer to the edges of structure, which ESD characteristics were promoted then the others by reducing the electrostatic discharge from dangling bonds, so that operation stabilities and reliabilities of such vertical structural LED can be improve.

摘要 I
Abstract II
誌謝 III
目錄 IV
表目錄 VII
圖目錄 VIII
第一章 序論 1
1.1前言 1
1.2研究動機 4
參考文獻 7
第二章 理論基礎 9
2.1發光二極體原理 9
2.2 垂直式結構發光二極體元件 10
2.3晶圓鍵結(Wafer Bonding) 12
2.4 雷射剝離(Laser lift-off) 15
2.5 靜電放電(Electrostatic Discharge,ESD) 17
參考文獻 26
第三章 水平式與垂直式結構發光二極體元件樣品製備 30
3.1水平式結構發光二極體元件樣品製備 30
3.2垂直式結構發光二極體元件樣品製備 34
參考文獻 44
第四章 垂直式與水平式結構發光二極體光電特性分析 45
4.1垂直式與水平式結構發光二極體電特性之分析 45
4.2垂直式與水平式結構發光二極體光特性之分析 46
參考文獻 58
第五章 抗靜電垂直式結構發光二極體特性分析 59
5.1 抗靜電垂直式結構發光二極體樣品製備 59
5.1.1 元件邊緣絕緣保護層-電極底下粗糙化(SWPAS-UPR) 59
5.1.2元件邊緣絕緣保護層-電極底下平坦化(SWPAS-UPF) 60
5.1.3元件整面絕緣保護層-電極底下粗糙化(ALPAS-UPR) 60
5.1.4元件整面絕緣保護層-電極底下平坦化(ALPAS-UPF) 61
5.1.5元件整面絕緣保護層-電極底下平坦化-電流阻障層放大(ALPAS-UPF-SWCB) 61
5.2 抗靜電垂直式結構LED光電特性比較 62
5.3 抗靜電垂直式結構發光二極體抗靜電特性比較 64
5.3.1不同絕緣保護層之垂直式結構發光二極體抗靜電特性分析 64
5.3.2不同電流阻障層之垂直式結構發光二極體抗靜電特性分析 70
參考文獻 82
第六章 結論與未來展望 83
6.1結論 83
6.2未來展望 85

第一章
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[8] J. K. Sheu,“Group III-V Element-Based LED Having ESD Protection Capacity, United States Patent US 6593597 (2003)
[9] S. J Chang, C. F. Shen, S. C. Shei, R. W. Chuang, C. S. Chang, W. S. Chang, W. S. Chen, T. K. Ko, and J. K. Sheu,“ Highly Reliable Nitride-Based LEDs With Internal ESD Protection Diodes, IEEE Transaction on device and material reliability, Vol. 6,no. 3,pp. 442-447 (2006)

第二章
[1]郭浩中,賴芳儀,郭守義,“LED 原理與應用, 五南圖書出版社
[2]史光國,“半導體發光二極體及固態照明,全華科技圖書
[3] W. S. Wong1, T. Sands, N. W. Cheung, M. Kneissl, D. P. Bour, P. Mei, L. T. Romano, and N. M. Johnson ,“InxGa1−xN light emitting diodes on Si substrates fabricated by Pd–In metal bonding and laser lift-off, Appl. Phys. Lett., Vol. 77 ,no. 18, pp. 2822-2824,(2000)
[4] W. Y. Lin, D. S. Wuu, K. F. Pan, S. H. Huang, C. E. Lee, W. K. Wang, S. C. Hsu, Y. Y. Su, S. Y. Huang, and R. H. Horng, “High-Power GaN–Mirror–Cu Light-Emitting Diodes for Vertical Current Injection Using Laser Liftoff and Electroplating Techniques,IEEE Photonics Technology Lett., vol. 17, no. 9, pp.1809-1811 (2005)
[5] 楊於錚,〝準分子雷射剝離技術應用於具鍍鎳金屬基板高功率垂直結構GaNLEDs之研究〞,成功大學微電子工程研究所,碩士論文(2005)
[6] X. Guo and E. F. Schubert,“Current crowding in GaN/InGaN light emitting diodes on insulating substrates, Appl. Phys. Lett., vol. 90,no. 8, pp.4191-4195 (2001)
[7] Y. S. Zhao, D. L. Hibbard, H. P. Lee, K. Ma, W. So and H. Liu,“Efficiency enhancement of InGaN/GaN light-emitting diodes with a back-surface distributed bragg reflector,IEEE Journal of Electronic Materials, Vol. 32, no.12, pp.1523-1526,(2003)
[8] M. Sumiya, M. Tanaka, K. Ohtsuka, S. Fuke, T. Ohnishi, I. Ohkubo, M. Yoshimoto, H. Koinuma, and M. Kawasaki,“Analysis of the polar direction of GaN film growth by coaxial impact collision ion scattering spectroscopy, Appl. Phys. Lett., vol. 75,no. 5 pp. 674–676, (1999)
[9] Zhifang Fan, S. Noor Mohammad, Wook Kim, Özgür Aktas, Andrei E. Botchkarev,“Low resistance multilayer Ohmic contact to nGaN,Appl. Phys. Lett.,Vol. 68,no. 12 pp. 1672-1674 (1996)
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[11] Changzhi Lu, Hongnai Chen, Xiaoliang Lv, Xuesong Xie, and S. Noor Mohammad ,“Temperature and doping-dependent resistivity of Ti/Au/Pd/Au multilayer ohmic contact to n-GaN, J. Appl. Phys. ,Vol. 30,no. 3,pp. 9218-9221 (2002)
[12] 徐志偉,〝利用晶圓接合與電鍍技術製作高功率氮化鎵族發光二極體〞,國立交通大學材料科學與工程系所,碩士論文(2009)
[13] Q. Yi. Tong , Duke Univ., Durham, NC Cha, G. Gafiteanu, R. Gosele, “Low temperature wafer direct bonding, IEEE Journal of Microelectromechanical Systems, Vol. 3 ,no. 1, pp. 29-35 (1994)
[14] R. F. Wolffenbuttel,“ Low-temperature intermediate Au-Si wafer bonding eutectic or silicide bond , Sensors and Actuators A: Physical, Vol. 62, no. 1-3, pp.680–686,(1997)
[15] C.C. Lee, C.Y. Wang, G. Matijasevic, “Au-In bonding below the eutectic temperature Components,IEEE Hybrids and Manufacturing Technology, Vol. 16,no. 3,pp. 311-316 (1993)
[16] 金銦合金相圖(Alloy Phase Diagram) “ASM Handbook,Alloy phase diagrams, 福懋出版社 (1993)
[17] 曾煒竣,〝晶圓鍵結技術應用在光電元件之研究〞,國立成功大學光電科學與工程研究,碩士論文 (2009)
[18] M. K. Kelly, O. Ambacher, R. Dimitrov, R. Handschuh, and M.Stutzmann, “Optical process for liftoff of Group III - nitride films,Phys. Stat. Sol., Vol. 159,no. 1 pp. R3-R4, (1997)
[19] W. S. Wong1, T. Sands, and N. W. Cheung,“Damage-free separation of GaN thin films from sapphire substrates, Appl. Phys. Lett. , Vol. 72 ,no. 5,pp. 599-602 (1998)
[20] 鄧宏安,〝高功率氮化鎵發光二極體於雷射剝離後之晶圓翹曲分析〞國立清華大學動力機械工程學系,碩士論文(2008)
[21] W. S. Wong, T. Sands, N. W. Cheung, M. Kneissl, D. P. Bour, P. Mei, L. T. Romano, and N. M. Johnson,“InxGa1−xN light emitting diodes on Si substrates fabricated by Pd–In metal bonding and laser lift-off , Appl. Phys. Lett. , Vol. 77 ,no. 18,pp. 2822-2824 (2000)
[22] JEDEC SOLID STATE TECHNOLOGY ASSOCIATION ,“Electrostatic Discharge (ESD) Sensitivity Testing Human Body Model (HBM)JESD22-A114D, (2005)
[23] William K.Antle,“Light Emitting Diode Assembly Having Integrated Electrostatic Discharge Protection, United States Patent US 5914501 (1999)
[24] J. K. Sheu, “Group III-V Element-Based LED Having ESD Protection Capacity, United States Patent US 6593597 (2003)
[25] S. J Chang, C. F. Shen, S. C. Shei, R. W. Chuang, C. S. Chang, W. S. Chang, W. S. Chen, T. K. Ko, and J. K. Sheu,“ Highly Reliable Nitride-Based LEDs With Internal ESD Protection Diodes, IEEE Transaction on device and material reliability, Vol. 6,no. 3,pp. 442-447 (2006)

第三章
[1] H. W. Choi1, S. J. Chua, A. Raman, J. S. Pan,and A. S. Wee “Plasma-induced damage to n-type GaNAppl. Phys. Lett.,Vol. 77, no. 12, pp. 1795-1797 (2000)
[2] 楊於錚,〝準分子雷射剝離技術應用於具鍍鎳金屬基板高功率垂直結構GaN 基LEDs 之研究〞,國立成功大學微電子工程研究所 ,碩士論文 (2005)

第四章
[1]郭浩中,賴芳儀,郭守義,“LED 原理與應用, 五南圖書(2009)
[2]史光國,“半導體發光二極體及固態照明,全華科技圖書(2005)

第五章
[1] JEDEC SOLID STATE TECHNOLOGY ASSOCIATION Electrostatic Discharge (ESD) Sensitivity Testing Human Body Model (HBM), JESD22-A114D (2005)
[2] H. W. Choi1, S. J. Chua, A. Raman, J. S. Pan,and A. S. Wee “ Plasma-induced damage to n-type GaN Appl. Phys. Lett.,Vol. 77,no. 12,pp. 1795-1797 ,2000


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