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研究生:陳昱穎
研究生(外文):Yu-YingChen
論文名稱:有機非揮發性記憶體中載子累積的機制研究
論文名稱(外文):Study of the mechanism of charge accumulation in organic nonvolatile memories
指導教授:周維揚周維揚引用關係
指導教授(外文):Wei-Yang Chou
學位類別:碩士
校院名稱:國立成功大學
系所名稱:光電科學與工程學系
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2012
畢業學年度:100
語文別:中文
論文頁數:96
中文關鍵詞:烷基駢苯衍生物五環素有機非揮發性記憶體
外文關鍵詞:NN’-dioctadecy1-34910-perylenetetracarboxylicorganic non-volatile memorytrapping layer
相關次數:
  • 被引用被引用:0
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  • 下載下載:4
  • 收藏至我的研究室書目清單書目收藏:0
本實驗利用五苯環素與自行合成之烷基駢苯衍生物做為主動層,製作有機非揮發性記憶體元件,藉由改變不同種類的載子捕捉層,並且利用各種不同的薄膜特性分析探討表面形貌與電性方面的影響。
本研究共分為兩個主題,主題一利用兩種不同的結構:單層載子捕捉層Ps、C-pvp與同時具有修飾層與載子捕捉層雙層結構的PS + PS、C-PVP + PαMS、PS +PMMA,藉由上述兩種不同結構來控制記憶窗口變化,其中以C-PVP + PαMS可以得到最大的記憶窗口與元件穩定性,另外在製作有機反向器時雖然C-PVP+ PαMS有最大的記憶窗口但卻因p型電流較小使得n、p型電流無法匹配,導致Vs較無法得到Vs = 1/2 VDD,反倒是記憶窗口較小的PS + PS比較匹配,較適合作為反相器。
主題二利用三種PI作為有機記憶體元件的載子捕捉層,藉由元件電性與材料特性分析來探討結構與電性的影響,分別是DA7013、DA9000、DA9000A。在這三種PI中DA7013表現出優異的n型記憶體特性,在耐久度上也有優異的表現,而DA9000A不具有側鏈所以缺乏捕捉載子的能力,故不適合做為記憶體元件卻適合製作反相器,DA9000則有相

Pentacene and N,N’-dioctadecy1-3,4,9,10-perylenetetracarboxylic diimide (PTCDI-C13H27) are used as active layers to fabricate organic non-volatile memory devices with various types of charge trapping layer. Several types of semiconductor film are used to determine the impact of surface morphology and electrical properties.

In the first part, a single-layer structure that has a trapping layer, Polystyrene (Ps), and cross-linked poly (4-vinylphenol) (C-PVP) and a double-layer structure that has a modification layer and a trapping layer, PS + PS, C-PVP + Poly (a-methylstyrene) (PαMS), and PS + polymethylmethac- 0.rylate (PMMA) are used. The memory window of the double–layer structure is much larger than that of the single-layer structure. C-PVP + PαMS provides the largest memory window and the best stability.

In the second part, three types of polyimide, namely DA7013, DA9000, and DA9000A, are used as a trapping layer to fabricate non-volatile memory devices. The main structures of DA9000 and DA9000A are the same, but DA9000A does not have a side chain and thus lacks the ability to capture carriers. DA9000A is thus unsuitable for a memory device. The opposite is true for DA9000. DA7013 exhibits an excellent n-type memory feature and durability.

中文摘要........I
英文摘要........II
致謝...........III
目錄............IV
表目錄..........VI
圖目錄..........VII
第一章 緒論.....1
1-1 非揮發記憶體簡介............1
1-1-2懸浮閘結構非揮發記憶體.....1
1-1-3 SONOS結構非揮發記憶體.....2
1-1-4奈米晶體結構非揮發記憶體...3
1-1-5電阻式記憶體...............4
1-2有機非揮發性記憶體發展.......4
1-3 研究動機....................5
第二章 有機薄膜電晶體與記憶元件原理.....8
2-1有機薄膜電晶體基本結構.......8
2-2有機薄膜電機體操作原理.......8
2-2-1汲極電流公式.......8
2-3臨界電壓......9
2-4電流開關比...10
2-5載子遷移率...10
2-6次臨界擺福...10
2-7 有機非揮發式記憶體元件操作原理......11
2-7-1記憶窗口....11
2-7-2有機非揮發式記憶體元件操作原理......11
2-7-3 耐久度....12
2-8反向器原理...13
第三章 載子捕捉層對有機非揮發式記憶元件影響....19
3-1前言.........19
3-2實驗材料.....20
3-2-1半導體材料.20
3-2-2高分子修飾層與載子捕捉層..20
3-3 元件製程....21
3-4 分析儀器介紹.23
3-5薄膜特性分析..23
3-5-1原子力顯微鏡結果分析.......24
3-5-2表面能分析..25
3-5-3 X-Ray繞射分析..25
3-6有機非揮發性記憶體元件電性量測....26
3-6-1有機記憶體元件電性量測..........26
3-6-2記憶窗口.....27
3-6-3寫入/清除速度與偏壓變化.........28
3-6-4耐久度(endurance)...28
3-7 OCMOS轉移曲線........29
第四章 聚亞醯胺應用於有機記憶體元件...54
4-1前言.54
4-2實驗材料.....54
4-2-1半導體材料.54
4-2-2高分子修飾層與載子捕捉層...55
4-3 元件製程....55
4-4分析儀器介紹.55
4-5薄膜特性分析.56
4-5-1原子力顯微鏡結果分析........56
4-5-2表面能分析.57
4-5-3 X-Ray繞射分析...58
4-6有機非揮發記憶體元件電性量測.58
4-6-1記憶窗口...59
4-6-2寫入/清除速度與偏壓變化....60
4-6-3耐久度(endurance)..61
4-7 OCMOS轉移曲線.......61
第五章 結論.....89
5-1實驗結論.....89
5-2未來工作.....91
參考文獻........92


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