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研究生:楊鎮宇
研究生(外文):Chen-YuYang
論文名稱:電化學法製備微奈米銅線技術與應用
論文名稱(外文):Fabrication and Application of Copper Micro-Nano Wires by Electrochemical Deposition
指導教授:鍾震桂
指導教授(外文):Chen-Kui Chung
學位類別:碩士
校院名稱:國立成功大學
系所名稱:奈米科技暨微系統工程研究所
學門:工程學門
學類:材料工程學類
論文種類:學術論文
論文出版年:2012
畢業學年度:100
語文別:中文
論文頁數:85
中文關鍵詞:陽極氧化鋁電化學沈積微米銅線奈米銅線
外文關鍵詞:AAOelectrochemical depositioncopper nanowirescopper microwires
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本研究為透過市售的陽極氧化鋁模板,以電化學沈積的方式,在直流與脈衝不同的條件下,進行微奈米銅線的沈積。並探討電壓、溫度、孔徑和工作週期等實驗參數對於微奈米銅線的形貌與相結構之影響,最後,再進行量測奈米銅線的場發射特性,並就結果加以比較之。
本研究調變電壓、溫度、孔徑與工作週期等實驗參數後,進行模板電化學沈積,並以掃描式電子顯微鏡 (SEM)觀察微奈米銅線的形貌;以低掠角X光繞射儀 (GIXRD)分析奈米銅線的相結構與結晶性;最後再以場效發射量測系統量測奈米銅線的場發射特性。
實驗結果顯示,在直流的條件之下,電壓在1、2、3 V沈積出來的奈米線,其長度分別為28.45±4.28、1.01±0.21、0.66±0.16 μm;而微米線的長度則分別為36.23、49.54、55.12 μm。因此,在直流的情況下,微米線隨者電壓增大而增長,而奈米線則是以1 V的實驗結果為佳。另外,在脈衝的條件之下,電壓在1、2、3 V沈積出來的奈米線,其長度分別為25.16±2.81、31.64±4.29、22.75±4.33 μm,而微米線的長度則分別為34.38、40.48、49.84 μm,所以,在脈衝的情況下,微米線隨者電壓增大而增長,而奈米線則是以2 V的實驗結果為佳。針對場發射特性的量測,模板孔徑20 nm、電壓1 V、工作週期50%、溫度25 ℃的奈米銅線擁有最低的啟動電壓。預期製作出來的奈米銅線可應用在探針頭、場發射器與導線等方面。

In this study, we utilized both direct current (DC) and pulse electroforming modes to deposit copper micro-nano wires by anodic aluminum oxide (AAO) template electrochemical deposition method. The variation of morphology and crystallographic structure of copper micro-nano wires between modulated parameters such as voltage, temperature, pore size and duty cycle were investigated. And we also measured the field emission characteristic of copper nanowires.
In the experiment process, the structure of copper micro-nano wires was investigated by scanning electron microscopy (SEM). The crystallographic structure of copper nanowires was characterized by grazing incidence X-ray diffraction (GIXRD). The field emission characteristic of copper nanowires was measured by field emission measurement system.
At direct current electroforming mode, the length of copper microwires at 1, 2, 3 V was 36.23, 49.54, 55.12 μm . The length of copper nanowires at 1, 2, 3 V was 28.45±4.28, 1.01±0.21, 0.66±0.16 μm. The experimental result showed that the growth of copper microwires increased with increasing voltage. The good result of copper nanowires was at 1 V. At the pulse electroforming mode, the length of copper microwires at 1, 2, 3 V was 34.38, 40.48, 49.84 μm. The length of copper nanowires at 1, 2, 3 V was 25.16±2.81, 31.64±4.29, 22.75±4.33 μm. The experimental result showed that the growth of copper microwires increased with increasing voltage. The good result of copper nanowires was at 2 V. At the measurement of field emission characteristic, the sample at template pore size 20 nm, voltage 1 V, duty cycle 50%, temperature 25 ℃ has low turn-on voltage. The copper nanostructure was expected to apply in probes, emitters and interconnects.

摘要 I
Abstract II
致謝 IV
目錄 V
表目錄 VII
圖目錄 VIII
第一章 緒論 1
1-1 前言 1
1-2 研究動機與目的 3
1-3 本文架構 5
第二章 理論基礎與文獻回顧 6
2-1 電化學的基本理論 6
2-1-1 電化學反應 6
2-1-2 過電位 8
2-1-3 離子質傳 9
2-1-4 影響電鑄的因素 10
2-2 文獻回顧 12
2-2-1 一維微奈米材料的研究發展 12
2-2-2 銅微米結構的研究發展 13
2-2-3 銅奈米結構的研究發展 14
第三章 實驗步驟與原理方法 15
3-1 實驗流程 15
3-1-1 試片準備 15
3-1-2 電鑄奈米銅線與分析 17
3-2 實驗材料與參數 19
3-2-1 實驗材料 19
3-2-2 實驗參數 20
3-3 實驗儀器 23
3-3-1電子束蒸鍍機 (E-beam evaporator) 23
3-3-2 二氧化碳雷射光刻機 (CO2 laser scraper) 24
3-3-3 電化學沈積系統 27
3-3-4 掃描式電子顯微鏡 (Scanning electron microscopy, SEM) 28
3-3-5低掠角X光繞射儀 (Glancing incident angle X-ray diffraction, GIXRD) 29
3-3-6場效發射量測系統 (Field emission measurement system) 31
第四章 結果與討論 32
4-1 雷射加工AAO模板的特性 32
4-1-1 雷射加工AAO模板在不同功率的影響 32
4-1-2 水輔助雷射加工AAO模板在不同功率的影響 34
4-2 直流電鑄AAO奈米銅線的特性 37
4-2-1 直流電鑄奈米銅線在不同電壓的影響 37
4-2-2 直流電鑄奈米銅線在不同溫度的影響 41
4-2-3 直流電鑄奈米銅線在不同孔徑的影響 44
4-3 脈衝電鑄AAO奈米銅線的特性 48
4-3-1 脈衝電鑄奈米銅線在不同電壓的影響 48
4-3-2 脈衝電鑄奈米銅線在不同工作週期的影響 51
4-3-3 脈衝電鑄奈米銅線在不同溫度的影響 54
4-3-4 脈衝電鑄奈米銅線在不同孔徑的影響 57
4-4 電鑄AAO微米銅線的特性 61
4-4-1 雷射加工微米孔洞 61
4-4-2 直流電鑄AAO微米銅線的特性 62
4-4-3 脈衝電鑄AAO微米銅線的特性 64
4-5 奈米銅線的應用 66
4-5-1 奈米結構的場發射發展 66
4-5-2 場發射特性量測 69
第五章 結論與未來工作 73
5-1 結論 73
5-2 本文貢獻 75
5-3 未來工作 76
參考文獻 78
自述 85


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