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研究生:周宇珏
研究生(外文):Chou, Yuchueh
論文名稱:室溫低真空射頻電漿輔助式脈衝式雷射沉積氧化鋅薄膜
論文名稱(外文):Low Vacuum, Room Temperature RF-Plasma Enhanced Pulsed Laser Deposition Of Zinc Oxide Thin Films
指導教授:孫台平
指導教授(外文):Sun, Taiping
口試委員:孫台平蕭桂森林家弘林智玲
口試委員(外文):Sun, TaipingHsiao, KueisenLin, JahonLin, chihling
口試日期:2012-07-20
學位類別:碩士
校院名稱:國立暨南國際大學
系所名稱:電機工程學系
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2012
畢業學年度:100
語文別:中文
論文頁數:65
中文關鍵詞:氧化鋅射頻電漿輔助式脈衝式雷射沉積
外文關鍵詞:ZnORF-PEPLD
相關次數:
  • 被引用被引用:0
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  • 下載下載:2
  • 收藏至我的研究室書目清單書目收藏:0
氧化鋅(zinc oxide, ZnO)薄膜近年來受到各界探討,由於氧化鋅屬於寬能隙II-VI族半導體。氧化鋅具有良好的光電及壓電特性、便宜和無毒。製作方式相當多樣,化學氣相沉積(chemical vapor deposition, CVD)、射頻濺鍍法(radio frequency sputtering)和脈衝式雷射沉積(pulsed laser deposition, PLD)。脈衝式雷射沉積溫度低且具有良好的化學計量比且容易控制。
本論文利用脈衝式雷射沉積和射頻電漿輔助式脈衝式雷射沉積(RF-plasma enhanced PLD, RF-PEPLD)製備氧化鋅薄膜於玻璃和矽基板上。分析不同環境下成長氧化鋅薄膜的結構與光學特性,而射頻電漿輔助式脈衝式雷射沉積氧化鋅薄膜具有良好品質、提升鍍膜速度和增加鍍膜面積。
Zinc oxide (ZnO) has been investigated widely in recent years, because it is a wide band gap semiconductor. ZnO exhibits good photoelectric, piezoelectric, inexpensive, and nontoxic. Several technique such as chemical vapor deposition (CVD), radio frequency (RF) sputtering, and pulsed laser deposition (PLD). The PLD technique has advantages, such as crystallization of films at lower temperature, easily controlled and good stoichiometry transfer.
In this thesis, we deposited ZnO thin films on glass and silicon substrates by PLD and radio frequency (RF) plasma-enhanced PLD (RF-PEPLD) at room temperature and low vacuum.
We analysis the crystal structures and optical properties of the ZnO films were characterized by changing the fabrications conditions. The results demonstrate that good crystal quality, highly deposition rate and large deposition area of the ZnO thin films were improved with the help of RF plasma.
第一章 緒論 1
1-1 前言 1
1-2 研究目的及動機 4
第二章 文獻回顧 6
2-1 ZnO 氧化鋅 6
2-1-1 ZnO 之結構 6
2-1-2 ZnO 之光學性質 8
2-1-3 ZnO 之導電性質 10
2-1-4 ZnO 之應用 10
2-2 PLD 脈衝式雷射沉積 11
2-2-1 PLD 原理與應用 11
2-2-2 RF-PEPLD 射頻電漿輔助式脈衝式雷射沉積 15
第三章 實驗方法與步驟 19
3-1 實驗流程與步驟 19
3-2 實驗設備 21
3-2-1 脈衝式雷射(Pulsed laser) 21
3-2-2 真空系統 22
3-3 薄膜分析 24
3-3-1 X 光繞射儀(X-Ray Diffraction, XRD) 24
3-3-2 微細表面形場測定儀(α-step) 25
3-3-3 掃描式電子顯微鏡(Scanning electron microscope, SEM) 26
3-3-4 可見光/紫外光光譜儀(UV-Visible) 27
3-3-5 光激發光量測(Photonluminence, PL) 28
第四章 實驗結果與討論 29
4-1 PL D製備ZnO 薄膜 29
4-2 RF Plasma 參數之影響 37
4-2-1 RF power 對於ZnO 薄膜的影響 37
4-2-2 上電極面積大小對於ZnO 薄膜的影響 39
4-2-3 上下電極距離對於ZnO 薄膜的影響 41
4-3 RF-PEPLD 製備ZnO薄膜 43
4-3-1 ZnO 薄膜之結構分析 43
4-3-2 ZnO 薄膜之光學分析 50
第五章 結論 57
第六章 參考文獻 59
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