臺灣博碩士論文加值系統

本研究論文以變溫砷介面層(300~420 °C)成長砷化鎵磊晶層於矽/鍺基板上。由實驗結果證實，變溫砷介面層成長在經由650 °C退火後矽/鍺基板不僅可有效改善隨後成長之砷化鎵磊晶層表面形貌(Rms: 1.1 nm)亦可減少反向疇(APDs)產生，使砷化鎵磊晶層缺陷密度降低至2 × 107 cm-2。由於變溫砷介面層中砷原子與矽/鍺基板中鍺原子間鍵結能(bonding energy)較弱及低五三比(V/III: 20)的使用，使砷化鎵磊晶層與鍺磊晶層間不必要的原子擴散現象被有效抑制。這些研究成果皆證實變溫砷介面層對欲成長於矽基板上之三五族奈米電子元件及光電元件將具有極大的發展潛力。

The growth of GaAs epitaxy on Ge/Si substrates with an arsenic prelayer grown with graded temperature ramped from 300 to 420 °C is investigated. It is demonstrated that the graded-temperature arsenic prelayer grown on a Ge/Si substrate annealed at 650 °C not only improves the surface morphology (roughness: 1.1 nm) but also reduces the anti-phase domains’ (APDs) density in GaAs epitaxy (dislocation density: ~2 × 107 cm-2). Moreover, the unwanted interdiffusion between Ge and GaAs epitaxy is suppressed by using the graded-temperature arsenic prelayer due to the low energy of the Ge-As bond and the use of a low V/III ratio of 20. These results suggest that the graded-temperature As prelayer grown on Ge/Si substrate has great potential for use in the growth of III-V nanoelectronic devices and optoelectronic devices on the Si substrate.

Chapter 1
Introduction 1
1.1 Types of solar cells 1
1.2 III-V compound solar cells 4
1.3 Improvement of III-V compound solar cells 5
Chapter2
Literature Review 8
2.1 Integration of GaAs epitaxy on Ge/Si substrate 8
2.1.1 Material characteristics of GaAs on Ge/Si substrates 8
2.2 Antiphase domains (APDs) formation 9
2.2.1 Use of a high-growth-temperature technique 10
2.2.2 Use of misoriented substrates 12
2.2.3 Use of the substrate annealing process 13
2.3 Interdiffusion of Ge, Ga, and As atoms 16
2.3.1 Suppression of interdiffusion using low growth temperature technique 17
2.3.2 Suppression of interdiffusion using prelayer 18
2.4 Motivation 20
Chapter 3
Experimental process 34
3.1 LP-MOCVD (Low-pressure Metalorganic Chemical Vapor Deposition) 34
3.1.1 Gas handling system 34
3.1.2 Reactor chamber 35
3.1.3 Pyrolysis detector, exhaust system and safety apparatus 36
3.2 MOCVD growth mechanisms 36
3.2.1 Thermodynamically limited growth regime 36
3.2.2 Mass transport limited growth regime 37
3.2.3 Surface kinetics limited growth regime 37
3.2.4 Reaction mechanism of GaAs epitaxy 38
3.3 Experimental details 38
3.4 Material characterizations 39
3.4.1 X-ray diffraction (XRD) 40
3.4.2 Scanning electron microscopy (SEM) 42
3.4.3 Transmission electron microscopy (TEM) 44
3.4.4 Atomic force microscopy (AFM) 45
3.4.5 Secondary ion mass spectrometer (SIMS) 46
3.4.6 Optical Microscope (OM) 48
Chapter 4
Results and discussion 53
4.1 Effect of growth temperatures on GaAs/As on Ge/Si substrate 53
4.2 Effect of III-V ratios on GaAs/As on Ge/Si substrate 54
4.3 Effect of substrate annealing on GaAs/As on Ge/Si substrate 58
4.4 Function of graded-temperature arsenic prelayer on GeAs/Ge/Si heterostructure 60
Chapter 5
Conclusions 77
Reference 78

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