臺灣博碩士論文加值系統

氮化鎵材料本身具有的優秀材料特性，如：高抗熱、高崩潰電壓、高電子飽和速&;#64001;、優秀的壓電效應以及高電&;#63946;密&;#64001;，非常適合應用於高速與高溫操作的環境。本研究的目的，在測量氮化鋁鎵/氮化鎵高載子遷移率電晶體之電性特性與參數，並說明量測方法與討論，包含了載子缺陷效應、阻性與感性負載切換實驗、以及臨限電壓與閘極漏電流量測，以提供電路設計之必要資訊，最後利用IsSpice電路模擬軟體建立其大訊號等效電路模型，便於在電路設計上的修改與模擬。

GaN material has excellent material properties, such as high heat, high breakdown voltage, high electron saturation velocity, excellent piezoelectric effect and high current density, which is very suitable for operating in high-speed and high temperature environment. The purpose of this study is the measurements of AlGaN / GaN high electron mobility transistor's electrical characteristics and parameters, including charge trapping effect, resistive and inductive load switching test, threshold voltage and gate leakage measurements, by describing and discussing the method of these measurements to provide the necessary information for circuit design, and finally model the large-signal equivalent circuit in IsSpice simulation software for circuit design and simulation.

摘要 i
Abstract ii
誌 謝 iii
目錄 iv
圖目錄 viii
表目錄 xii
符號說明 1
第一章 緒論 4
1.1氮化鎵材料特性與應用 4
1.2 研究動機 5
1.3 論文架構 5
第二章 AlGaN/GaN HEMT電性特性量測 7
2.1 功率AlGaN/GaN HEMT簡介 7
2.1.1 AlGaN/GaN HEMT操作原理 7
2.1.2 功率AlGaN/GaN HEMT結構 8
2.2 直流特性分析 8
2.2.1 AlGaN/GaN HEMT熱效應簡介 9
2.3 切換特性分析 9
2.3.1 AlGaN/GaN HEMT缺陷效應簡介 9
2.3.2 缺陷效應實驗與結果 9
第三章 一般功率元件電性參數量測 11
3.1 臨限電壓量測(Threshold voltage measurement) 12
3.1.1 實驗目的 12
3.1.2 實驗儀器 12
3.1.3 實驗原理 12
3.1.4 IRF640實驗步驟 12
3.1.5 EPC1010實驗步驟 13
3.1.6 實驗結果與討論 13
3.2 汲極漏電流量測(Drain to source leakage current measurement) 14
3.2.1 實驗目的 14
3.2.2 實驗儀器 14
3.2.3 實驗原理 14
3.2.4 實驗結果與討論 14
3.3 閘極漏電流量測(Gate leakage current measurement) 15
3.3.1 實驗目的 15
3.3.2 實驗儀器 15
3.3.3 實驗原理 15
3.3.4 實驗結果與討論 15
3.4 阻性負載開關時間量測(Switching time test with resistive load) 15
3.4.1實驗目的 16
3.4.2 實驗儀器 16
3.4.3實驗原理 16
3.4.4 IRF 630實驗步驟 17
3.4.5 EPC1010實驗步驟 17
3.4.6 實驗結果與討論 17
3.5 無箝制感性負載實驗(Unclamped inductive load test) 19
3.5.1 實驗目的 19
3.5.2 實驗儀器 19
3.5.3 實驗原理 20
3.5.4 IRF 630實驗步驟 22
3.5.5 EPC1010實驗步驟 23
3.5.6實驗結果與討論 23
3.6 閘極電荷量測實驗(Gate charge test) 24
3.6.1 實驗目的 25
3.6.2 實驗儀器 25
3.6.3 實驗原理 25
3.6.4 IRF630實驗步驟 26
3.6.5 EPC1010實驗步驟 26
3.6.6 實驗結果與討論 27
第四章 AlGaN/GaN等效電路模型 29
4.1 等效電路模型簡介 29
4.2 建立等效電路模型 30
4.2.1 HEMT大訊號模型 30
4.2.2 Angelov HEMT 實驗經驗模型 32
第五章 結論 35
參考文獻 36
圖片 40
附表 71

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