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研究生:劉佳融
研究生(外文):Chia Lung Liu
論文名稱:銦鎵氧化鋅薄膜電晶體濕度感測元件之研究
論文名稱(外文):Study Of InGaZnO Thin-Film Transistor In Sensing Of Relative Humidity
指導教授:楊誌欽楊誌欽引用關係
指導教授(外文):Chih Chin Yang
口試委員:張鼎張高宗達卜一宇陳榮斌楊誌欽
口試委員(外文):Ting Chang ChangTsung Ta KaoYi-Yu BuRong Bin ChenChih Chin Yang
口試日期:2012-06-27
學位類別:碩士
校院名稱:國立高雄海洋科技大學
系所名稱:微電子工程研究所
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2012
畢業學年度:100
語文別:中文
論文頁數:76
中文關鍵詞:銦鎵氧化鋅薄膜式電晶體濕度感測器
外文關鍵詞:InGaZnOThin-film transistorRelative humidity sensor
相關次數:
  • 被引用被引用:1
  • 點閱點閱:551
  • 評分評分:
  • 下載下載:11
  • 收藏至我的研究室書目清單書目收藏:1
本研究採用在室溫下沉積銦鎵氧化鋅 (InGaZnO, IGZO)金屬氧化物作為濕度感測材料,具有良好的載子移動率,並易受濕度環境因素影響,因為敏感度佳,因此適合做為濕度感測材料。感測元件採用薄膜式電晶體作為感測結構,使用背閘極與背通道蝕刻的方式增加感測面積,實驗結果發現IGZO在施加負偏壓,而且升溫到80℃時吸附(Adsorption)OH^-氫氧根離子特性最為敏感,幾乎可達到-9.04V的感測窗口,且每增加1%的相對濕度,電流會放大24%,在暗態下的氣氛回復(Recovery)時具有較好的回復(Recovery)特性,且遲滯效應(Hysteresis effect)較小,並且不需抽真空就能回復(Recovery),回復(Recovery)速度與真空時一致,在未來商業化的應用價值高。最後,在長時間測試中發現,重復操作10,000秒後發現吸附(Adsorption)及去吸附(Desorption)的數值穩定,表示其穩定度(Stability)佳,且能重復(Repeatability)操作。
In this study, InGaZnO was adopted as the sensing material for humidity sensor. There are several advantageous properties in InGaZnO thin-film transistor (TFT) such as high carrier mobility, excellent uniformity and low produced temperature. Eventually, InGaZnO thin-film transistor is known to be sensing in ambient gas, and it makes InGaZnO thin-film transistor an appropriate device for sensor. An experimental result shows the characteristics of InGaZnO in application of RH thin-film transistor significantly is altered when negative gate bias is imposed on the gate terminal at 80°C. Water molecules are adsorbed on the back channel of InGaZnO TFT and cause the shift of negative threshold voltage, and sensing window of potential voltage can achieve -9.04V when the device is operated at 80°C. However, recovery of devices is faster when the recovery condition is under a dark environment, which is better than under light illumination. By way of the re-test, the device undergo in repeating turn on/turn off cycles, and the obtained results reveal that the sensing properties are still valid after 10,000 seconds of operation.
摘 要 I
Abstract II
誌 謝 III
表目錄 VII
圖目錄 VIII
第壹章 緒論 1
第貳章 文獻探討 8
第參章 實驗方法與步驟 18
3-1 薄膜式電晶體濕度感測器 18
3-1-1 薄膜式電晶體濕度感測元件結構 18
3-1-2 電性量測系統 19
3-1-3 環境測試系統 20
3-1-4 實驗參數 22
3-2 氧化鋅(ZnO)電晶體濕度感測器 29
3-2-1 氧化鋅(ZnO)電晶體濕度感測元件結構 29
3-2-2 氧化鋅(ZnO)電晶體濕度感測元件製程 30
3-2-3 電性量測系統 34
第肆章 結果與討論 35
4-1 IGZO 薄膜電晶體濕度感測器 35
4-1-1 感測元件對氣氛吸附(Adsorption)的影響 36
4-1-2 感測元件對氣氛回復(Recovery)的影響 53
4-1-3 電漿表面處理後對元件的影響 61
4-2 氧化鋅(ZnO)濕度感測器 64
4-2-1 感測器材料分析 64
4-2-2 氧化鋅(ZnO)通道感測器濕度感測 66
第伍章 結論 69
參考文獻 70


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