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研究生(外文):Chia Lung Liu
論文名稱(外文):Study Of InGaZnO Thin-Film Transistor In Sensing Of Relative Humidity
指導教授(外文):Chih Chin Yang
口試委員(外文):Ting Chang ChangTsung Ta KaoYi-Yu BuRong Bin ChenChih Chin Yang
外文關鍵詞:InGaZnOThin-film transistorRelative humidity sensor
  • 被引用被引用:1
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本研究採用在室溫下沉積銦鎵氧化鋅 (InGaZnO, IGZO)金屬氧化物作為濕度感測材料,具有良好的載子移動率,並易受濕度環境因素影響,因為敏感度佳,因此適合做為濕度感測材料。感測元件採用薄膜式電晶體作為感測結構,使用背閘極與背通道蝕刻的方式增加感測面積,實驗結果發現IGZO在施加負偏壓,而且升溫到80℃時吸附(Adsorption)OH^-氫氧根離子特性最為敏感,幾乎可達到-9.04V的感測窗口,且每增加1%的相對濕度,電流會放大24%,在暗態下的氣氛回復(Recovery)時具有較好的回復(Recovery)特性,且遲滯效應(Hysteresis effect)較小,並且不需抽真空就能回復(Recovery),回復(Recovery)速度與真空時一致,在未來商業化的應用價值高。最後,在長時間測試中發現,重復操作10,000秒後發現吸附(Adsorption)及去吸附(Desorption)的數值穩定,表示其穩定度(Stability)佳,且能重復(Repeatability)操作。
In this study, InGaZnO was adopted as the sensing material for humidity sensor. There are several advantageous properties in InGaZnO thin-film transistor (TFT) such as high carrier mobility, excellent uniformity and low produced temperature. Eventually, InGaZnO thin-film transistor is known to be sensing in ambient gas, and it makes InGaZnO thin-film transistor an appropriate device for sensor. An experimental result shows the characteristics of InGaZnO in application of RH thin-film transistor significantly is altered when negative gate bias is imposed on the gate terminal at 80°C. Water molecules are adsorbed on the back channel of InGaZnO TFT and cause the shift of negative threshold voltage, and sensing window of potential voltage can achieve -9.04V when the device is operated at 80°C. However, recovery of devices is faster when the recovery condition is under a dark environment, which is better than under light illumination. By way of the re-test, the device undergo in repeating turn on/turn off cycles, and the obtained results reveal that the sensing properties are still valid after 10,000 seconds of operation.
摘 要 I
Abstract II
誌 謝 III
表目錄 VII
圖目錄 VIII
第壹章 緒論 1
第貳章 文獻探討 8
第參章 實驗方法與步驟 18
3-1 薄膜式電晶體濕度感測器 18
3-1-1 薄膜式電晶體濕度感測元件結構 18
3-1-2 電性量測系統 19
3-1-3 環境測試系統 20
3-1-4 實驗參數 22
3-2 氧化鋅(ZnO)電晶體濕度感測器 29
3-2-1 氧化鋅(ZnO)電晶體濕度感測元件結構 29
3-2-2 氧化鋅(ZnO)電晶體濕度感測元件製程 30
3-2-3 電性量測系統 34
第肆章 結果與討論 35
4-1 IGZO 薄膜電晶體濕度感測器 35
4-1-1 感測元件對氣氛吸附(Adsorption)的影響 36
4-1-2 感測元件對氣氛回復(Recovery)的影響 53
4-1-3 電漿表面處理後對元件的影響 61
4-2 氧化鋅(ZnO)濕度感測器 64
4-2-1 感測器材料分析 64
4-2-2 氧化鋅(ZnO)通道感測器濕度感測 66
第伍章 結論 69
參考文獻 70

[1]E. Traversa, "Ceramic sensors for humidity detection: the state-of-the-art and future developments," Sensors Actuators B: Chem., vol. 23, pp. 135-156, 1995.
[2]B. Patissier, "Humidity sensors for automotive, appliances and consumer applications," Sensors Actuators B: Chem., vol. 59, pp. 231-234, 1999.
[3]C. L. Liu, S. P. Hsu, C. C. Yang, J. Y. Guo, P. C. Wu, "Application of ZnO Humidity Sensor in Detection of Human Body Respiration," Conference on Microelectronics Technology & Applications, pp. 456-459, 2011.
[4]S. Wangnipparnto, T. Suksri, "The relative humidity control," Institute of Chemistry the Chinese Academy of Sciences-Society of Instrument and Control Engineers(ICCAS-SICE)" ,pp. 5216-5219, 2009.
[5]J. Witzel, "my favorite experiment - A Simple Hair Hygrometer," Instrumentation & Measurement Magazine, IEEE, vol. 10, pp. 61-62, 2007.
[6]C. C. Yang, J. W. Lee, H. Y. Yang, Y. S. Lee, H. R. Syu, "Study of High Resistivity Zinc Oxide Humidity Sensing Material Grown on Silicon Wafer ," Journal of Kaohsiung Marine University, vol. 23, pp. 121-130, 2008.
[7]H. Ito, R. Kakuma, R. Ohba, K. Noda, "Development of a humidity sensor using quartz crystal microbalance," Society of Instrument and Control Engineers 2003 Annual Conference(SICE), Vol. 2, pp. 1175-1178, 2003
[8]E. Starke, A. Turke, M. Krause, W. -. Fischer, "Flexible polymer humidity sensor fabricated by inkjet printing," Solid-State Sensors, Actuators and Microsystems Conference (TRANSDUCERS), 2011 16th International, 2011, pp. 1152-1155.
[9]I. Sabtu, M. A. A. Hamid, I. A. Talib, M. M. Salleh, "Electrical humidity response of sol-gel processed LiCl-doped SiO2 thin films," 2004IEEE International Conference on Semiconductor Electronics, pp. 3 , 2004.
[10]T. Nitta, S. Hayakawa, "Ceramic Humidity Sensors," IEEE Transactions on Components, Hybrids, and Manufacturing Technology, vol. 3, pp. 237-243, 1980.
[11]H. Yabuta, M. Sano, K. Abe, T. Aiba, T. Den, H. Kumomi, K. Nomura, T. Kamiya, H. Hosono, "High-mobility thin-film transistor with amorphous IGZO4 channel fabricated by room temperature rf-magnetron sputtering," Appl. Phys. Lett., vol. 89, pp. 112123, 2006.
[12]P. K. Kannan, R. Saraswathi, J. B. B. Rayappan, "A highly sensitive humidity sensor based on DC reactive magnetron sputtered zinc oxide thin film," Sensors and Actuators A: Physical, vol. 164, pp. 8-14, 2010.
[13]Nomura, K.; Ohta, H.; Takagi, A.; Kamiya, T.; Hirano, M.; Hosono, H., "Room-Temperature Fabrication of Transparent Flexible Thin Film Transistors Using Amorphous Oxide Semiconductors, " Letters to Nature, vol. 432, pp. 488-491 ,2004.
[14]T. Kamiya, H. Hosono, "Material characteristics and applications of transparent amorphous oxide semiconductors, "Nature Publishing Group (NPG) Asia Mater" pp.15-22 ,2010.
[15]S. B. Wang, C. H. Hsiao, S. J. Chang, K. T. Lam, K. H. Wen, S. J. Young, S. C. Hung, B. R. Huang, "CuO Nanowire-Based Humidity Sensor," Sensors Journal, IEEE, vol. 12, pp. 1884-1888, 2012.
[16]K. Arshak, K. Twomey, "Thin films of In2O3/SiO for Humidity Sensing Applications," Sensors, vol. 2, pp. 205-218, 2002.
[17]R. Wu, Y. Sun, C. Lin, H. Chen, M. Chavali, "Composite of TiO2 nanowires and Nafion as humidity sensor material," Sensors Actuators B: Chem., vol. 115, pp. 198-204, 5/23, 2006.
[18]N. K. Pandey, K. Tiwari, A. Roy, "Ag WO3 Doped Nanomaterials as Relative Humidity Sensor," Sensors Journal, IEEE, vol. 11, pp. 2911-2918, 2011.
[19]P. K. Kannan, R. Saraswathi, J. B. B. Rayappan, "A highly sensitive humidity sensor based on DC reactive magnetron sputtered zinc oxide thin film," Sensors and Actuators A: Physical, vol. 164, pp. 8-14, 2010.
[20]B. Yang, B. Aksak, Q. Lin, M. Sitti, "Compliant and low-cost humidity nanosensors using nanoporous polymer membranes," Sensors Actuators B: Chem., vol. 114, pp. 254-262, 2006.
[21]J. H. Kim, S. M. Hong, J. S. Lee, B. M. Moon, K. Kim, "High sensitivity capacitive humidity sensor with a novel polyimide design fabricated by MEMS technology," in Nano/Micro Engineered and Molecular Systems, 2009. NEMS 2009. 4th IEEE International Conference, pp. 703-706, 2009.
[22]M. Neshkova, R. Petrova, V. Petrov, "Piezoelectric quartz crystal humidity sensor using chemically modified nitrated polystyrene as water sorbing coating," Anal. Chim. Acta, vol. 332, pp. 93-103, 1996.
[23]Y. T. Chen, H. L. Kao, "Humidity sensors made on polyvinyl-alcohol film coated SAW devices," Electronics Letters, vol. 42, pp. 948-949, 2006.
[24]C. Bernou, D. Rebière, J. Pistré, "Microwave sensors: a new sensing principle. Application to humidity detection," Sensors Actuators B: Chem., vol. 68, pp. 88-93, 2000.
[25]J. M. Corres, F. J. Arregui, I. R. Matias, "Design of Humidity Sensors Based on Tapered Optical Fibers," Lightwave Technology, Journal of, vol. 24, pp. 4329-4336, 2006.
[26]S. Jeon, S. Park, I. Song, J. H. Hur, J. Park, S. Kim, S. Kim, H. Yin, E. Lee, S. Ahn, H. Kim, C. Kim, U. I. Chung, "180nm gate length amorphous IGZO thin film transistor for high density image sensor applications," 2010 IEEE International in Electron Devices Meeting (IEDM), pp. 21.3.1-21.3.4 , 2010.
[27]N. G. Cho, I. Kim, "NO2 gas sensing properties of amorphous IGZO4 submicron-tubes prepared by polymeric fiber templating route," Sensors Actuators B: Chem., vol. 160, pp. 499-504, 2011.
[28]K. Chen, B. Li, Y. Chen, "Silicon nanowire field-effect transistor-based biosensors for biomedical diagnosis and cellular recording investigation," Nano Today, vol. 6, pp. 131-154, 4, 2011.
[29]H. Xiao, "Introduction to Semiconductor Manufacturing technology", Prentice Hall, New York ,2001.
[30]W. F. Chung, T. C. Chang, H. W. Li, S.C. Chen, Y. C. Chen, T. Y. Tseng, Y.H. Tai, "H2O-Assisted O2 Adsorption in Sol-Gel Derived Amorphous Indium Gallium Zinc Oxide Thin Film Transistors," Electrochemical and Solid-State Letters, vol. 14, pp. 235-237 ,2011.
[31]S. P. Lee, K. Park, "Humidity sensitive field effect transistors," Sensors Actuators B: Chem., vol. 35, pp. 80-84, 9, 1996.

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