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研究生:吳庭孝
研究生(外文):Wu, Ting-Hsiao
論文名稱:利用快速熱熔再結晶法製作金半金結構之面收型鍺紅外光光子偵測器於矽基板上
論文名稱(外文):Surface Incident Metal-Semiconductor-Metal Ge Photodetectors on Si Substrate Fabricated by Rapid-Melting-Growth Method
指導教授:李明昌李明昌引用關係
指導教授(外文):LeeㄝMing-Chang
學位類別:碩士
校院名稱:國立清華大學
系所名稱:光電工程研究所
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2012
畢業學年度:100
語文別:中文
論文頁數:88
中文關鍵詞:光子偵測器快速熱熔再結晶
外文關鍵詞:germaniumphotodetectorrapid-melting-growth
相關次數:
  • 被引用被引用:1
  • 點閱點閱:159
  • 評分評分:
  • 下載下載:23
  • 收藏至我的研究室書目清單書目收藏:0
多年來,在半導工業上多以Si晶圓作為材料,其優點有成本低、取得容易、產能大,但近年來由於光纖通訊的迅速發展使得人們對於紅外光長波長的通訊波段有著極大的需求,而光電元件也相應設計可應用於紅外光波長。以光學設計之角度來看,Si的能帶約1.11 eV且其對1310~1550 nm的紅外光吸收係數非常的弱[1],反觀Ge的能帶約0.67 eV且其對紅外光波長具良好的吸收係數,因此Ge材料更適用於紅外光通訊元件。
在紅外光光子偵測器的研究,已有許多文獻被提出,其中MSM架構下的光子偵測器具有速度快、製程簡單的優點,但由於金屬與鍺之間的蕭特基位障由費米能階釘位(Fermi level pinning)效應所影響,文獻指出通常在電洞端的位障較低,而此較低的位障易造成較大的暗電流,然而許多文獻也針對此問題來討論如何降低暗電流(dark curent)的影響,例如:摻雜(dopant)、非對稱金屬電極、表面鈍化(passivation),而本論文利用結合快速熱熔再結晶法(rapid melting growth)、表面鈍化、不同退火(RTA)條件的方式來來達到降低暗電流的目的,另外在模擬上模擬出元件的吸光效率來計算對紅外光波長的吸收,最後在量測上比較各元件的暗電流、光電流、訊雜比、光響應度。

Over decades, silicon semiconductor industry grows rapidly due to advanced CMOS technology as well as relatively low cost for silicon and stable material properties. Silicon-based optoelectronics, benefited from the matured IC industry, receives a lot of attention recently. One of the key applications is high-speed photodetectors for optical communication or optical links. However, Si is transparent for infrared wavelength that is usually used in optical communication. Other materials should be integrated on the Si optoelectronic devices to detect infrared signals. Ge is an ideal material for long wavelength absorption; meanwhile, Ge process is usually CMOS-compatible, indicating the possibility of mass production.
Ge-based photodetectors on silicon substrate have been studied by several research groups. One of the key issues is difficult epitaxy of Ge on silicon due to lattice mismatch (4%). In this thesis, we propose using rapid melting growth method to grow high-quality monocrystal metal-semiconductor-metal Ge photodetectors on Si substrate with low thermal budget. By well selecting metal contact and Ge passivation, the device dark current was significant reduced by three orders of magnitude. Since the absorption layer is very thin, we propose back illumination or metallic grating couplers to enhance the responsivity.

摘要.....................................................Ⅰ
Abstract..................................................Ⅱ
致謝.................................................... Ⅲ
目錄.....................................................IV
第一章 緒論.............................................8
1.1 前言...........................................8
1.2 研究動機.......................................13
1.3 論文架構.......................................14
第二章 理論背景.........................................15
2.1 鍺材料應用於紅外光通訊元件....................15
2.2 快速熱熔再結晶................................17
2.3 金屬-半導體-金屬 光子偵測器....................24
2.4 增加位障與表面鈍化.............................32
2.5 光束傳播法之原理簡介...........................33
第三章 元件模擬與設計...................................36
3.1 前言..........................................36
3.2 Rsoft模擬吸光效率..............................36
第四章 元件製作.........................................40
4.1元件製作說明....................................40
4.2元件製作流程表..................................41
4.3 元件製作流程詳細說明...........................47
第五章 元件量測與分析...................................55
5.1實驗架構與量測方法..............................55
5.2實驗數據與結果..................................56
第六章 結論與未來展望...................................80
6.1結論............................................80
6.2未來展望........................................81
參考文獻.................................................84

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