臺灣博碩士論文加值系統

氧化鋅(ZnO)為ⅡⅥ族半導體材料，因為其高能隙值3.37eV及高激子束縛能60meV等材料性質，有非常多的應用領域如發光二極體、光催化材料、全透明電子元件等光電元件材料。但難以製備電性良好的p-type氧化鋅侷限了氧化鋅的發展空間，目前難以製備穩定p-type氧化鋅可以歸因於，摻雜物在氧化鋅中的溶解度太低與摻雜物活化能量太高等因素，因此如何提升溶解度與降低活化能成為很重要的課題。因此Persson et al.提出藉由摻雜等價元素硫以降低活化能的方式，希望以此降低摻雜物的活化能量。
本研究主要分三部分，第一部分是使用硫化後氧化兩階段熱處理方式將硫摻雜到以溶膠-凝膠法(Sol-gel method)製備的氧化鋅薄膜，用各種分析儀器去驗證硫的摻雜與比較摻雜前後性質差異。第二部分是以溶膠-凝膠法製備p-type氧化鋅薄膜，實驗選用了三種不同元素鋰、銅、氮做為p-type摻雜物。觀察不同退火溫度及摻雜濃度對p-type氧化鋅電性的影響，並藉由分析晶體結構、光學性質與化學鍵結的方式去探討薄膜內部缺陷的變化去解釋電性的轉變。第三部分是將成功鍍製的p-type氧化鋅薄膜進行硫化後氧化兩階段熱處理流程，觀察此一製程對p-type氧化鋅薄膜的電性與基本材料性質造成的影響。

目錄
摘要 I
致謝 II
目錄 IV
表目錄 VIII
圖目錄 XI
第一章 緒論 1
1-1 前言 1
1-2 研究動機 2
第二章 文獻回顧 4
2-1 氧化鋅發展簡介 4
2-2 氧化鋅本質缺陷對形成p-type氧化鋅的影響 6
2-3 使用鋰為p-type摻雜物 7
2-4 使用銅為p-type摻雜物 9
2-5 使用氮為p-type摻雜物 10
2-6 硫添加的能隙工程 12
第三章 實驗方法 26
3-1 實驗大綱 26
3-2 製備硫摻雜氧化鋅薄膜及氧化鋅奈米柱 27
3-2-1 基板準備: 27
3-2-2 Sol-gel法鍍製氧化鋅薄膜 27
3-2-3 硫化製程 27
3-2-4 氧化製程 28
3-2-5 製備氧化鋅奈米柱 28
3-3 製備p-type氧化鋅薄膜 29
3-3-1 基板準備: 29
3-3-2 Sol-gel法鍍製p-type氧化鋅薄膜 29
3-4 製備硫摻雜p-type氧化鋅薄膜 30
3-5 量測儀器 30
第四章 結果與討論 35
4-1 硫摻雜氧化鋅製備及分析 35
4-1-1 前言 35
4-1-2 熱處理溫度及硫粉量對硫化和硫化再氧化之硫摻雜氧化鋅薄膜的影響 36
4-1-3 不同氧化熱處理溫度及熱處理時間對硫化再氧化之硫摻雜氧化鋅薄膜的影響 45
4-1-4 以硫化再氧化方式熱處理氧化鋅奈米柱及其性質分析 51
4-2 以摻雜製備P型氧化鋅薄膜及性質分析 56
4-2-1 鋰摻雜氧化鋅薄膜製備及性質分析 56
4-2-2 銅摻雜氧化鋅薄膜製備及性質分析 73
4-2-3 氮摻雜氧化鋅薄膜製備及性質分析 83
4-3 P-type氧化鋅薄膜硫化再氧化之兩階段熱處理及性質分析 87
4-3-1 前言 87
4-3-2 鋰摻雜氧化鋅薄膜硫化後氧化之兩階段熱處理及性質分析 87
4-3-3 銅摻雜氧化鋅薄膜硫化後氧化之兩階段熱處理及性質分析 89
4-3-4 氮摻雜氧化鋅薄膜硫化後氧化之兩階段熱處理及性質分析 90
4-3-5 結論 92
第五章 結論 146
第六章 參考文獻 149

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