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研究生:郭瑞旻
研究生(外文):Kuo, Jui-Min
論文名稱:熱載子導致高壓P型通道橫向擴散金氧半場效電晶體元件特性退化之可靠度研究
論文名稱(外文):Hot-carrier Induced Reliability Degradation in High Voltage P-LDMOS Transistors
指導教授:黃智方
學位類別:碩士
校院名稱:國立清華大學
系所名稱:電子工程研究所
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2012
畢業學年度:100
論文頁數:66
中文關鍵詞:橫向擴散金氧半場效電晶體可靠度
外文關鍵詞:LDMOScharge pumpingreliability
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本篇論文是採用0.5 μm 2p3m 高壓製程製作,並針對P通道橫向擴散金氧半場效電晶體元件(LDMOS transistor) 進行可靠度研究。主要採用charge pumping方法量測表面缺陷,並結合電腦模擬軟體(TCAD),對各元件特性參數的退化來做更進一步的分析討論。
首先介紹高壓元件的原理及設計概念,charge pumping理論和量測設置,以及熱退化實驗各參數的萃取。並且利用元件結構參數的變化,charge pumping量測確定從模擬得到的參數(VT, cp)。量測發現長通道和短通道元件在電流密度上的不同,使克爾克效應(Kirk effect)易發生於短通道元件,進而影響可靠度。
由於克爾克效應的發生,基板電流(bulk current)會產生兩個峰值,對元件加壓在最大基板電流進行可靠度分析。根據熱載子實驗結果,發現不論是在長通道或是短通道元件,加壓在第一個峰值的測試,都只在P型漂移區產生較大的傷害。但當短通道元件加壓在第二個峰值,元件可靠度大幅下降,且經由模擬的輔助,發現電場的移動造成整個元件的傷害,使得導通電阻退化和臨界電壓偏移。

In this thesis, the p-type lateral diffused MOS (LDMOS) transistor used in this work is implemented with a 0.5 μm 2p3m high-voltage process. To investigate the reliability issue, charge pumping method is used to detect the interface states of the device. And to combine TCAD (Technology Computer Aided Design) simulation supports the analysis of the device.
First, we have background review, which contains the introduction of the high-voltage device, the mechanism of hot-carrier degradation, and the methodology of charge pumping. Then the measurement set-up and the characteristic parameters extraction for the virgin devices are discussed. According to measurement result, we observe that Kirk effect will degrade the reliability in short channel (L = 1 μm) device.
Due to Kirk effect, it produces a specific double-hump bulk current in short channel device. The hot-carrier degradation experiment is performed in long channel (L = 5 μm) and short channel (L = 1 μm) devices respectively. Both two channel lengths have mainly damage in the P-well region when stresses at the first peak. And when stressed at the second peak, there has serious degradation in whole device. The shift of electric field makes the degradation of on-resistance (Ron) and the shift of threshold voltage (VT, on). The simulation can give the reasonable explanation.

Abstract (English) I
Abstract (Chinese) II
Contents III
Figure Captions V
List of Tables VIII
Chapter 1 Introduction 1
1.1 Motivation 1
1.2 Literature review 2
1.3 Organization of this thesis 3
Chapter 2 Background Review 5
2.1 High-voltage device overview 5
2.1.1 RESURF (Reduced surface field) structure 5
2.1.2 Field plate structure 6
2.2 Hot-carrier degradation 8
2.3 Methodology of the charge pumping 9
Chapter 3 Simulation 16
3.1 Introduction 16
3.2 Device structure overview 16
3.3 Physical models used in simulation 17
3.4 Simulation 20
3.5 Summary 21
Chapter 4 Measurement and Virgin Device Characteristics 22
4.1 Introduction 22
4.2 Measurement 22
4.2.1 Instrument setup 22
4.2.2 Device overview 23
4.2.3 Id - Vg measurement 23
4.2.4 Id – Vd measurement 24
4.2.5 Breakdown voltage measurement 24
4.2.6 Charge-pumping measurement 28
4.2.7 The comparison of difference dimension 32
4.3 Summary 36
Chapter 5 Analysis of Hot-carrier Degradation Phenomenon and Mechanisms 37
5.1 Kirk effect 37
5.2 Hot-carrier degradation measurement 41
5.2.1 Stress test on L = 5 μm 41
5.2.2 Stress test on L = 1 μm (1st peak) 47
5.2.3 Stress test on L = 1 μm (2nd peak) 52
5.3 Summary 60
Chapter 6 Conclusion and future work 61
6.1 Conclusion 61
6.2 Future work 62
References 63

[1] B. Murari, “Smart power technology and the evolution from protective umbrella to complete system,” IEDM, pp. 9–15, December 1995.
[2] R. Versari, A. Pieracci, S. Manzini, C. Contiero, and B. Ricci, “Hot-carrier reliability in submicrometer LDMOS transistors,” IEDM, pp. 371–374, December 1997.
[3] J. S. Brugler and P. G. A. Jespers, “Charge pumping in MOS devices,” IEEE Trans. Electron Devices, vol. 16, no.3, pp. 297–302, March 1969.
[4] G. Groeseneken, H. E. Maes, N. Beltran, and R.F. de Keersmaecker, “A reliable approach to charge-pumping measurements in MOS transistors,” IEEE Trans. Electron Devices, vol. 31, no.1, pp. 42–53, January 1984.
[5] D. Bauza and Y. Maneglia, “In-depth exploration of Si-SiO2 interface traps in MOS transistors using the charge pumping technique,” IEEE Trans. Electron Devices, vol. 44, no. 12, pp. 2262–2266, December 1997.
[6] C.Y. Lu, K.S. Chang-Liao, P.H. Tsai, and T.K. Wang, “Depth profiling of border traps in MOSFET with high-κ gate dielectric by charge-pumping technique,” IEEE Trans. Electron Devices, vol. 27, no. 10, pp. 859–862, October 2006.
[7] D. Okamoto, H. Yano, T. Hatayama, Y. Uraoka, and T. Fuyuki, “Analysis of anomalous charge-pumping characteristics on 4H-SiC MOSFETs,” IEEE Trans. Electron Devices, vol. 55, no. 8, pp. 2013–2020, August 2008.
[8] S.K. Manhas, D. Chandra Sehkar, A.S. Oates, and M.M. de Souza, “Characterization of series resistance degradation through charge pumping technique,” Microelectronics Reliability, vol. 43, no. 4, pp. 617–624, April 2003.
[9] C.C. Cheng, K.C. Tu, T. Wang, T.S. Hsieh, J.T. Tzeng, Y.C. Jong, R.S. Liou, S.C. Pan, and S.L Hsu, “Investigation of hot carrier degradation modes in LDMOS by using a novel three-region charge pumping technique,” Annual International Reliability Physics Symposium, pp. 334–337, March 2006.
[10] T.C. Wu, “Hot carrier reliability in 12V high voltage P-LDMOS transistors,” National Cheng Kung University, Tainan, Taiwan.
[11] B. Djezzar, H. Tahi, and A. Mokrani, “Why is oxide-trap charge-pumping method appropriate for radiation-induced trap depiction in MOSFET?,” IEEE Trans. Device and Materials Reliability, vol. 9, no. 2, pp. 222–230, June 2009.
[12] H. Tahi B. Djezzar, A. Benabdelmoumen, B. Nadji, and Y. Kribes, “Geometric component in constant-amplitude charge-pumping characteristics of LOCOS and LDD-MOSFET devices,” IEEE Trans. Device and Materials Reliability, vol. 11, no. 1, pp. 131–140, March 2011.
[13] F.C. Hsu and H.R. Grinolds, “Structure-enhanced MOSFET degradation due to hot-electron injection,” IEEE Electron Device Letters, vol. 5, no. 3, pp. 71–74, March 1984.
[14] P. Moens, G. V. den bosch, and G. Groeseneken,” Hot-carrier degradation phenomena in lateral and vertical DMOS transistors,” IEEE Trans. Electron Devices, vol. 51, no. 4, pp. 623–628, April 2004.
[15] B. J. Baliga, Fundamentals of Power Semiconductor Devices, Springer, 2008.
[16] J.A. Appels and H.M.J. Vaes, “High voltage thin layer devices (RESURF devices),” IEEE Electron Devices Meeting, vol. 5, pp. 238–241, 1979.
[17] M. Imam, M. Quddus, J. Adams, and Z. Hossain,” Efficacy of charge sharing in reshaping the surface electric field in high-voltage lateral RESURF devices,” IEEE Trans. Electron Devices, vol. 51, no. 1, pp. 141–148, January 2004.
[18] C. Hu, S.C. Tam, F.C. Hsu, P.K. Ko, T.Y. Chan, and K.W. Terrill, “Hot-electron-induced MOSFET degradation model, monitor, and improvement,” IEEE Journal of Solid-State Circuits, vol. 20, no. 1, pp. 295–305, February 1985.
[19] A.B.M Elliot, “The use of charge pumping currents to measure surface state densities in MOS transistors,” Solid-State Electronics, vol. 19, no. 3, pp. 241–247, March 1976.
[20] Synopsys○R, Sentaurus Device User Guide, March, 2007.
[21] C. Hu, Modern Semiconductor Devices for Integrated Circuits, PEARSON, 2010.
[22] A.W. Ludikhuize, “Kirk effect limitations in high voltage IC's,” Proceedings of the 6th International Symposium on Power Semiconductor Devices & IC's, pp. 249–252, 1994.
[23] C.T. Kirk, “A theory of transistor cutoff frequency (fr) falloff at high current densities,” IEEE Trans. Electron Devices, vol. 9, no. 2, pp. 164–174, March 1962.

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