臺灣博碩士論文加值系統

氮化鎵半導體在近年來一直是很熱門的材料，由於在發光二極體、雷射、高頻元件、高功率元件等等重要性，使得許多研究致力於此。

在本文，我們在氮化鎵發光二極體中，用填入式矽膠奈米小球作選擇性缺陷鈍化。首先先以濕式蝕刻讓缺陷終端產生六角型凹洞，接著再以矽膠奈米小球填入其中並在之後的長晶阻擋線性缺陷的延伸，最後使得氮化鎵發光二極體在電性及光性上能有所提升。

Gallium nitrid semiconductors have been a focus of intense research effort because of their importance in light emitting, lasing, high frequency, and high power devices.

In this study, we use a defect selective passivation with filling silica nanospheres in GaN light emitting diodes. Wet etching are used to reveal the termination of defect site and forms hexagonal etched pits. Then the etched pits are filled with silica nanospheres, which could blocking the propagation of threading dislocations in subsequent regrows, and finally improving both the electrical and optical characteristics in GaN light emitting diodes.

Content
摘要……………………………………………………………………………………………………………………....1
Abstract………………………………………………………………………………………………………………..2
致謝…………………………………………………………………………………………………………..…………..3
Chapter 1 Introduction……………………………………………………………………………….…6
1.1 Introduction of III-nitrides materials……………………………………………………….....6
1.2 Characteristics of Gallium Nitride………………………………………..…………….….….8
1.3 Internal quantum efficiency and Nonradiative recombination center………10
1.4 Light Extraction Efficiency………………………………………………………………………..15
1.5 Quality of GaN epitaxial layers…………………………………………………………………19
1.6 Reference………………………………………………………………………………………………..21
Chapter 2 Motivation………………………………………………………………………………..…23
2.1 Introduction……………………………………………………………………………………….……23
2.2 Defect selective passivation in GaN epitaxial growth……………………….……...25
2.3 Simplify process by embedded silica nanospheres………………………….….…...33
2.4 Microstructure and origin of dislocation pits types………………………………....37
2.5 Reference…………………………………………………………………………………………….….42
Chapter 3 Experiment Process……………………………………………………….………..44
3.1 Experiment Process Flow………………………………………………………………….……..44
3.2 Etching Process in GaN epilayers …………………………………………………….………45
3.3 Coating silica nanospheres on GaN surface………………………………………….……52
3.4 Regrows InGaN LED structureChapter …………………………………………….………55
Chapter 4 Characteristics and Measurement Result……………….…….58
4.1 Optical and electrical characteristics of LEDs………….……………………………….58
4.2 Quality improvement of LEDs………………………………………………………………….63
Chapter 5 Conclusion……………………………………………………………………………..…..68

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