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研究生:黑士銘
研究生(外文):SHIH-MING HEI
論文名稱:氧化鋅長波長電激發光元件之研究
論文名稱(外文):A Study of ZnO Long Wavelength Electroluminescence Devices
指導教授:張忠誠張忠誠引用關係
指導教授(外文):Chung-Cheng Chang
學位類別:碩士
校院名稱:國立臺灣海洋大學
系所名稱:電機工程學系
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2012
畢業學年度:100
語文別:中文
論文頁數:120
中文關鍵詞:氧化鋅摻銅射頻磁控濺鍍法電激發光元件
外文關鍵詞:Copper-doped zinc oxideRF magnetron sputtering methodElectrical excitation light components
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本研究以射頻磁控濺鍍法先於Si基板上先沈積一層約200nm之SiO2薄膜,再於SiO2/Si基板上沈積氧化鋅摻銅薄膜,並針對在氮氣氣氛下,經過不同退火溫度處理後的薄膜及不同之銅薄膜摻雜厚度,利用XRD繞射儀,掃描式顯微鏡(SEM),原子力顯微鏡(AFM),光激發螢光(Photo-Luminescence )進行特性量測及分析。
在元件製作方面,採用氧化鋅摻銅薄膜薄製作出電激發光元件,元件組成為 ITO/ZnO:Cu/SiO2/Si (P)/Al,並探討退火溫度對元件發光性質之影響。研究結果指出,當氧化鋅摻銅薄膜在氮氣氣氛下,經由600℃、700℃、800℃與900℃四種溫度高溫熱退火一小時後,其中以900℃退火後會有較佳的結晶性,此時能夠得到在(002)、(101)與(111)取向較小的FWHM,以及由PL光譜看出,以800℃退火後所激發出光強度最強。
在本實驗中使用磁控濺鍍系統沈積氧化鋅摻銅薄膜於SiO2/Si之基板上,製作出p-i-n接面之電激發光元件,經由施加適當電壓後,由光譜量測其激發光強度發現氧化鋅摻銅之電激發光EL元件所激發出來的光可發現位在黃綠光(520nm~620nm),所以經由上述幾點可知,此區域所量得波峰最為寬廣,強度也最高,而得知此電機發光元件所激發出來的光,以黃橘光為主。

This study used Radio Frequency Magnetron Sputtering to deposit a layer of SiO2 membrane in thickness of about 200nm on the Si substrate, and deposited a membrane of ZnO mixed with copper on the SiO2/Si substrate. It then used XRD diffraction instrument, SEM, AFM and Photo-Luminescence to measure and analyze the characteristics for the membranes treated at different annealing temperatures and different copper membrane mixing thicknesses in nitrogen.
In the production of element, the membrane of ZnO mixed with copper was used to produce the electroluminescent element, the element composition was ITO/ZnO:Cu/SiO2/Si (P)/Al, and the effect of annealing temperature on the luminous characteristic of element was discussed. The research results indicated that after one-hour high temperature thermal annealing of the membrane of ZnO mixed with copper in nitrogen at 600℃, 700℃, 800℃ and 900℃, the membrane annealed at 900℃ had better crystallinity. We can obtain a rather smaller FWHM at (002), (101) and (111), and the PL spectrum showed the annealing at 800℃ excited the most intensive light.
In this experiment, the magnetron sputtering system was used to deposit the membrane of ZnO mixed with copper on the SiO2/Si(P) substrate, to make the electroluminescent element of p-i-n ground. When a proper voltage was applied, the spectrum was used to measure the exciting light intensity, and the light excited by EL element of ZnO mixed with copper was found in the greenish yellow (520nm~620nm). Therefore, the widest peak and the highest intensity were measured in this region, and the light excited by this EL element was mainly of yellow-orange light.

第一章 緒論
1-1 EL發光元件之分類………………………………………...
1-2 薄膜電激發光(EL)元件之優點與缺點…………………….
1-2.1 薄膜電激發光(EL)元件之優點……………………
1-2.2 薄膜電激發光(EL)元件之缺點...………………….
1-3 研究目的……………………………………………………
第二章 理論分析
2-1 薄膜電激發光元件………………………………………….
2-1.1 元件結構……………………………………………
2-1.2 可見光發光二極體…………………………………
2-1.3 發光機制……………………………………………
2-2.3.1 直接撞擊激發原理………………………
2-2.3.2 能量轉移原理……………………………
2-2 薄膜成長原理……………………………………………….
2-3 元件所需之材料…………………………………………….
2-3.1 基板…………………………………………………
2-3.2 絕緣層………………………………………………
2-3.3 螢光層………………………………………………
2-3.4 透明導電薄膜………………………………………
2-3.5 金屬電極……………………………………………
2-4 螢光薄膜…………………………………………………….
2-4.1 氧化鋅之簡介………………………………………
2-4.2 氧化鋅薄膜之發光機制……………………………
2-5 CIE 色度座標………………………………………………
第三章 實驗方法與步驟
3-1 二氧化矽薄膜之備製……………………………………….
3-2 氧化鋅摻銅薄膜之製備…………………………………….
3-2.1 基板清洗……………………………………………
3-2.2 濺鍍步驟及參數……………………………………
3-2.3 退火處理……………………………………………
3-3 電激發光元件電極之製備………………………………….
3-3.1 透明電極光罩之設計………………………………
3-3.2 微影製程與透明電極之沈積………………………
3-3.3 背電極之沈積………………………………………
3-4 性質量測…………………………………………………….
3-4.1 X-ray 繞射分析儀(XRD)………………………….
3-4.2 掃描式電子顯微鏡 (SEM) 表面分析…………….
3-4.3 原子力顯微鏡 (AFM) 表面分析…………………
3-4.4 光激發光 (Photo-Luminescence) 特性分析……...
3-4.5 電激發光 (Electro-Luminescence) 特性分析…….
第四章 結果與討論
4-1 室溫沉積氧化鋅摻銅薄膜之性質分析…………………….
4-1.1 結晶性分析…………………………………………
4-1.2 表面型態分析………………………………………
4-1-3 光激發光光譜特性分析……………………………
4-2 退火溫度對氧化鋅摻銅薄膜之影響……………………….
4-2.1 表面型態分析………………………………………
4-2.1.1 SEM 表面分析…………………………..
4-2.1.2 AFM 表面分析…………………………..
4-2.2 結晶性分析…………………………………………
4-2.3 光激發光光譜特性分析……………………………
4-3 電激發光元件之量測……………………………………….
4-3.1 不同退火溫度之影響………………………………
4-3.1.1 光譜量測…………………………………
4-3.1.2 光譜量測I-V特性曲線…………………...
4-3.1.3 電激發光…………………………………
4-4 Conclusion
第五章 結論
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