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研究生:王靜汝
研究生(外文):Ching-Ju Wang
論文名稱:a面成長氮化銦鎵/氮化鎵多重量子井圓偏振光致自旋電流效應之研究
論文名稱(外文):Circular photogalvanic effect in a-plane InGaN/GaN multiple quantum wells
指導教授:林泰源林泰源引用關係
指導教授(外文):Tai-Yuan Lin
學位類別:碩士
校院名稱:國立臺灣海洋大學
系所名稱:光電科學研究所
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2012
畢業學年度:100
語文別:中文
論文頁數:55
中文關鍵詞:圓偏振光致自旋電流效應a面成長氮化銦鎵/氮化鎵多重量子井
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本研究在a面成長氮化銦鎵/氮化鎵多重量子井中成功觀察到隨激發光偏振態變化的帶間激發光生電流。由實驗結果我們分別擬合出圓偏振光致自旋電流效應(circular photogalvanic effect,簡稱CPGE) 與線偏振光致自旋電流效應(linear photogalvanic effect,簡稱LPGE),顯示在此材料中具有可產生圓偏振光致自旋電流(CPGE)的特性。更進一步我們改變激發光的入射角以改變偏振激發光的電場在a平面上之投影量,量測圓偏振光致自旋電流隨電場分量之變化,其結果符合CPGE隨入射角變化的理論預測。此外,我們量測不同激發光功率之光生電流,發現隨著激發光強度增加,LPGE與CPGE呈現趨於飽和之漂白趨勢(bleaching tendency),透由經驗公式擬合所得之CPGE與LPGE飽和強度(saturation intensity),分別為0.32017 mW/cm2和1.37064 mW/cm2。由以上結果,本研究指出a面成長氮化銦鎵/氮化鎵多重量子井中確實存在圓偏振光致自旋電流效應(CPGE)。
This study reports the observation of circular polarized light induced photo-currents in the a-plane InGaN/GaN multiple quantum wells (MQWs) under the interband excitation. The measured photo-currents were found to comprise the photo-currents arising from both the circular photogalvanic effect (CPGE) and the linear photogalvanic effect (LPGE). Such results indicate that the characteristic CPGE current does exist in the a-plane InGaN/GaN MQWs. Furthermore, the amplitude of the electric field of the incident radiation projected onto the a-plane of MQWs was varied by changing the incident angle of the circular polarized light for the interband excitation and the CPGE and LPGE currents were measured simultaneously. The obtained results show that the dependence of CPGE current on the amplitude of the electric field of the incident radiation projected onto the a-plane of MQWs obeys the theoretical prediction. In addition, the circular polarized light induced photo-currents were measured under different power densities of the incident excitation light. It was found that both CPGE and LPGE currents exhibit the bleaching tendency with the increase in the excitation power density. The saturated intensities of CPGE and LPGE currents were found to be 0.32 and 1.37 mW/cm2, respectively according to the fitting results of the empirical formula for the circular polarized light induced photo-currents.
目錄
中文摘要
英文摘要
致謝
目錄
圖目錄
表目錄
第一章 緒論
1-1 前言
1-2 研究動機
1-3 論文架構
1-4 參考文獻
第二章 文獻回顧與理論背景
2-1 歷史背景
2-1-1 自旋-軌道耦合
2-1-2 空間反演不對稱性
2-1-3 光學躍遷中的自旋角動量守恆
2-2 圓偏振光致自旋電流理論與機制
2-3 參考文獻
第三章 實驗架構
3-1 樣品介紹
3-1-1 a面成長氮化銦鎵/氮化鎵多重量子井之極化螢光光譜
3-1-2 a面成長氮化銦鎵/氮化鎵多重量子井之光激電流光譜
3-2 圓偏振光致自旋電流實驗與架構
3-2-1 改變入射角及改變激發功率之圓偏振光致自旋電流實驗
3-3 參考文獻
第四章 實驗結果與分析
4-1 a面成長氮化銦鎵/氮化鎵多重量子井的圓偏振光致自旋電流分析
4-2 以不同入射角量測a面成長氮化銦鎵/氮化鎵多重量子井的圓偏振光致自旋電流分析
4-3 以不同功率光源激發的a面成長氮化銦鎵/氮化鎵多重量子井的圓偏振光致自旋電流分析
4-4 參考文獻
第五章 結論

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[1.3] K. S. Cho, Y. F. Chen, Y. Q. Tang, and B. Shen, “Photogalvanic effects for interband absorption in AlGaN/GaN superlattices”, Appl. Phys. Lett. 90, 041909 (2007)
[2.1] C. M. Wei, K. S. Cho, Y. F. Chen, Y. H. Peng, C. W. Chiu et al., “Photogalvanic effects for interband transition in p-Si0.5Ge0.5/Si multiple quantum wells”, Appl. Phys. Lett. 91, 252102 (2007)
[2.2] V. V. Bel’kov, S. D. Ganichev, P. Schneider, D. Schowalter, U. Ro¨ ssler, W. Prettl, “Spin-Photocurrent in p-SiGe QuantumWells under Terahertz Laser Irradiation”, Journal of Superconductivity: Incorporating Novel Magnetism 16, No. 2, April 2003 (2003)
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[2.4] B. Wittmann, L. E. Golub, S. N. Danilov, J. Karch, C. Reitmaier, “Resonant circular photogalvanic effect in GaN/AlGaN heterojunctions”, PHYSICAL REVIEW B 78, 205435 (2008)
[2.5] W. Weber, L. E. Golub, S. N. Danilov, J. Karch, C. Reitmaier, B. Wittmann, “Quantum ratchet effects induced by terahertz radiation in GaN-based two-dimensional structures”, PHYSICAL REVIEW B 77, 245304 (2008)
[2.6] B. Wittmann, R. Ravash, H. Diehl, “Photogalvanic effects in HgTe quantum wells”, http://arxiv.org/abs/0708.2169
[2.7] B. Wittmann, S N Danilov, V V Bel’kov, S A Tarasenko, “Circular photogalvanic effect in HgTe/CdHgTe quantum well structures”, Semicond. Sci. Technol. 25 (2010) 095005
[2.8] S. D. Ganichev, E. L. Ivchenko, S. N. Danilov, “Conversion of Spin into Directed Electric Current in Quantum Wells”, PHYSICAL REVIEW LETTERS. VOLUME 86, NUMBER 19 (2001)
[2.9] S.D. Ganichev, E.L. Ivchenko, W. Prettl, “Photogalvanic e¬ects in quantum wells”, Physica E 14 (2002)
[2.10] V.V. Bel’kov, S.D. Ganichev, Petra Schneider, “Circular photogalvanic effect at inter-band excitation in semiconductor quantum wells”, Solid State Communications 128 (2003)
[2.11] E L Ivchenko, “Circular photogalvanic effect in nanostructures”, Conferences and symposia. December 2002
[2.12] 林怡萍, “自旋的電性操控-淺談自旋軌道耦合”, 物理雙月刊(廿八卷五期)2006 年10 月
[2.13] Dyakonov, Mikhail I., “Spin Physics in Semiconductors”, Springer Series in Solid-State Sciences 157, 2008
[2.14] David Awschalom ,Daniel Loss, Nitin Samarth, “Semiconductor Spintronics and Quantum Computation”, Springer Verlag (2002), p.115-121
[2.15] Jesse A. Berezovsky, “Optical Control and Detection of Spin Coherence in Semiconductor Nanostructures”, UNIVERSITY OF CALIFORNIA (2007), p.14, p.32
[2.16] Q. Zhang, X. Q. Wang, C. M. Yin, “Strong circular photogalvanic effect in ZnO epitaxial films”, Appl. Phys. Lett. 97, 041907 (2010)
[2.17] 葉良修 編著, “半導體物理學Semiconducor Physics(下) ”, 高等教育出版社
[3.1] T. C. Wang, T. S. Lu, H. C. Kuo, R. C. Gao, “Internal quantum efficiency behavior of a-plane and c-plane InGaN/GaN multiple quantum well with different indium compositions”, Phys. stat. sol. (c) 5, 2161–2163 (2008)
[3.2] Sandip Ghosh, Pranob Misra, H. T. Grahn, “Polarized photoreflectance spectroscopy of strained A-plane GaN films on R-plane sapphire”, J. Appl. Phys. 98, 026105 (2005)
[4.1] C. C. Kuo, W.-R. Liu, W. F. Hsieh, “Crystal symmetry breaking of wurtzite to orthorhombic in nonpolar a-ZnO epifilms”, Appl. Phys. Lett. 95, 011905(2009)
[4.2] C. M. Wei, K. S. Cho, Y. F. Chen, Y. H. Peng, C. W. Chiu et al., “Photogalvanic effects for interband transition in p-Si0.5Ge0.5/Si multiple quantum wells”, Appl. Phys. Lett. 91, 252102 (2007)
[4.3] K. S. Cho, Y. F. Chen, Y. Q. Tang, and B. Shen, “Photogalvanic effects for interband absorption in AlGaN/GaN superlattices”, Appl. Phys. Lett. 90, 041909 (2007)
[4.4] Q. Zhang, X. Q. Wang, C. M. Yin, “Strong circular photogalvanic effect in ZnO epitaxial films”, Appl. Phys. Lett. 97, 041907 (2010)
[4.5] S D Ganichev, W Prettl, “Spin photocurrents in quantum wells”, J. Phys.: Condens. Matter 15 (2003) R935–R983

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