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研究生:黃士逢
研究生(外文):Shih-Feng Huang
論文名稱:高精密三維光電顯微鏡之非線性補償研究
論文名稱(外文):Study on Nonlinear Compensation for Enhancing the Vertical Resolution of Three-dimensional (3-D) Electro-Optical Laser Microscope
指導教授:邱銘宏邱銘宏引用關係
指導教授(外文):Ming-Hung Chiu
學位類別:碩士
校院名稱:國立虎尾科技大學
系所名稱:光電與材料科技研究所
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2012
畢業學年度:100
語文別:中文
論文頁數:68
中文關鍵詞:CCD臨界角顯微鏡
外文關鍵詞:CCDcritical anglemicroscopethree-dimensional measurement
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本研究基於幾何光學、臨界角法之原理,衍生出一種非掃描非干涉的三維反射式光學顯微鏡,利用物體表面上的高度差所造成的反射光角度改變,再經由平行四邊形稜鏡將此角度改變轉換成靈敏的出射光強度改變。
為考慮稜鏡反射率對高度轉換之非線性誤差造成量測表面高度的誤差而進行補償之研究,可將此非線性誤差減至最低,使得所得之三維影像更接近真實。
此三維反射式光學顯微鏡,其放大倍率可達到兩百五十倍以上,可提供次微米的量測,並擁有奈米級的縱向解析度,可同時量測二維與三維之影像,量測上無論是粗糙之表面抑或是光滑表面上的小缺陷皆能快速被檢測出,量測速度上因為使用CCD擷取影像,如拍照一般,所以可做為大面積快速之即時量測,十分創新有趣。


In this study, we proposes a non-scanning, non-interferometric, three- dimensional (3D) optical microscope based on geometric optics, and critical angle principle. According to the first-order optic approximation, the deflection angle of the reflection light from the test specimen is proportional to its surface height.
In addition, the reflectance of a parallelogram prism is also proportional to the incident angle at the critical angle nearby. We used two charge-coupled devices (CCD) as cameras to record the images at the critical angle nearby and at the angle of total internal reflection, respectively, for making a reflectance profile. The reflectance profile can be transformed into the 3-D surface profile of the test surface.
Because the reflectance curve versus the incident angle is nonlinear, the nonlinear-error compensation is need to do in order to reduce the error and to enhance the measurement accuracy. This is one of the focus in this study.
The reflectance profile, obtained from CCDs, is the ratio of intensity recorded at the critical angle to the intensity recorded at the total internal reflection angle. The 3-D microscope provides a sub-micron measuring range with nanometer resolution in the axial direction and can also be used to measure roughness, film thickness or surface defects in real time.


摘要.....................................................i
Abstract................................................ii
誌謝.....................................................iii
目錄......................................................iv
表目錄....................................................vii
圖目錄...................................................viii
符號說明................................................xii
第一章 緒論................................................1
1.1前言....................................................1
1.2 文獻回顧................................................2
1.3 論文架構................................................7
第二章 反射率與外部入射角....................................8
2.1 s偏振光之反射率..........................................8
2.2 全反射對入射角度變化....................................10
2.2.1 全反射原理..........................................10
2.2.2 於稜鏡中一次反射與兩次反射之角度變化......................10
2.2.3 模擬兩次s偏光反射之反射率與外角變化......................12
第三章 系統元件原理........................................15
3.1 光阻隔器(Isolator)....................................16
3.2 擴束器(Beam Expander)..............................17
3.3 四分之一波片阻隔法....................................18
3.4 成像系統..........................................19
3.5待測物量測原理..........................................21
3.6 CCD基本原理..........................................23
3.7 物鏡(Objective)....................................24
第四章 實驗架構與結果....................................26
4.1 實驗架構...............................................27
]4.1.1 平行四邊形稜鏡的量測法..............................32
4.1.2 平行四邊形稜鏡反射率曲線之校正........................33
4.1.3 Rs2斜率修正探討....................................35
4.2 表面輪廓圖之量測結果....................................38
4.2.1 待測物為200 lines/mm之光柵........................38
4.2.1.1 待測物為200 lines/mm之光柵拍攝圖..................38
4.2.1.2 待測物為200 lines/mm光柵之3D圖..................40
4.2.2 待測物為二氧化鈦(TiO2)薄膜.............................45
4.2.2.1待測物為二氧化鈦(TiO2)薄膜sample1量測結果............46
4.2.2.2待測物為二氧化鈦(TiO2)薄膜sample1之3D圖............47
4.2.2.3待測物為二氧化鈦(TiO2)薄膜sample2量測結果............52
4.2.2.4待測物為二氧化鈦(TiO2)薄膜sample2之3D圖............53
4.3 系統分析..........................................57
4.3.1 系統靈敏度..........................................57
4.3.2 縱向解析度(不考慮光源強度變化的影響情況)..................58
4.3.3 橫向解析度..........................................59
4.3.4 橫向放大倍率 ....................................59
第五章 結論..........................................60
參考文獻................................................62
Extended Abstract....................................64
簡歷(CV)................................................68


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12. 林振勤(2009),“以臨界角法結合CCD影像擷取技術作表面形貌量測之研究”,國立虎尾科技大學光電與材料科技研究所碩士論文。
13. 陳昭安(2011) ,“高解析度反射式三維光電顯微鏡之研究”,國立虎尾科技大學光電與材料科技研究所碩士論文。


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