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研究生:林奕辰
研究生(外文):Lin, Yichan
論文名稱:一種新穎奈米碳管陣列圖形轉移製程與其場發射應用之研究
論文名稱(外文):A Modern Pattern Transfer Process of Carbon Nanotube Arrays to Flexible Substrate and its Field Emission Application
指導教授:陳木坤阮全平
指導教授(外文):Chen, MukunJuan, Chuanping
口試委員:黃全洲王志良陳木坤周允仕阮全平
口試日期:2012-06-27
學位類別:碩士
校院名稱:聖約翰科技大學
系所名稱:電子工程系碩士班
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2012
畢業學年度:100
語文別:中文
論文頁數:97
中文關鍵詞:碳管轉移製程軟性基板場發射
外文關鍵詞:FlexibleCarbon NanotubeTransferField Emission
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本篇論文研究是將奈米碳管(Carbon Nanotubes, CNTs)這種擁有良好電性和機械應力的材料,成長完成後將他轉移到擁有可撓性基板上且不需在高溫下操作,一方面不破壞準直而整齊的圖案化陣列、二來也能將碳管保護在基板中不破壞到每根碳管和碳管的完整性,在轉移到可撓性基板後再作為場發射之應用。
本研究主要是使用真空濺鍍(Sputtering)的方式來將我們成長所需的催化金屬鍍到基板之上的,催化金屬是先以鋁(AL)作為緩衝層,他的功能可以增加成長表面的粗糙度可以將其表面的催化金屬顆粒的尺寸變得更小,之後我們會再分別鍍上一層鈦(Ti)作為連接層和一層鈷(Co)鈦(Ti)合金奈米碳管的催化金屬,此種金屬共度的方式可以增加升奈米碳管對基板的附著能力也能一方面控制成長出來的碳管有較小的直徑使得密度會變為更高並能展現更好的場發射特性。
將鍍好催化金屬的基板熱化學氣相沉積法(thermal chemical vapor deposition, T-CVD)的方式來成長奈米碳管(Carbon Nanotubes, CNTs)陣列之後再利用電漿輔助化學氣相沉積系統(Oxford Instruments Plasma Technology, Oxford PECVD)鍍上一層氧化層將碳管保護好碳管陣列的完整性,並旋塗上一層滲透性很好的矽酮(PDMS)來附著在每一柱的奈米碳管柱來達到將基板從一般的矽基板轉移為矽酮這樣的軟性基板之上。轉移之前我們會利用高密度活性離子蝕刻系統(High Density Plasma Reactive Ion Etching System, HDP-RIE)將每一柱的碳管柱頂端給蝕刻開來做為之後場發射的發射端,因為被蝕刻過後的碳管柱不只是單純為了打開頂部作為場發射的發射端也能改善每根碳管柱的結晶性讓我們的場發射能有更好的特性。
此篇論文的我們將討論在各種不同高寬比之下的碳管陣列的場發射改變量、蝕刻碳管時間上的長短對於結晶性的改善多寡和影響場發射效應的差異,還有轉移到軟性基板上的碳管陣列和在一般矽基板上碳管陣列的場發射的差異性,驗證我們的轉移方式是否可以將其碳管陣列完美的轉移下來並且有更好的場發射效應。

Up until now, several studies revealed the transfer of patterned carbon nanotubes (CNTs) onto flexible substrate. It was taken extra care to keep the both sides of CNTs towers remain pristine clean for the applications. In this study, the transfer process of aligned carbon nanotube (CNT) was successfully proposed, also surface of CNTs was clearly appeared and remains pristine by oxide barrier layer for the applications such as light source or field emission devices. First, a patterned catalyst was formed on the Si substrate through the sputter and lift-off method. Second, the CNT arrays were growth on the patterned catalyst by thermal CVD process. Third, a 1-m-thick SiOx served as barrier layer was deposited by Oxford PECVD. To transfer the CNT arrays, a polydimethylsiloxane (PDMS) solution was spun on the substrate by spin coating method and heated at 100 oC using a hot plate to harden the PDMS. The thickness of the PDMS film could be controlled by the spin velocity and time. When the substrate was cooled down to room temperature, the CNT arrays were adhered to PDMS film. Then, the PDMS film and oxide layer were dry-etched to expose CNTs on the surface by HDP-RIE. Field emission (FE) properties were shown after dry-etching treatment and peeling form silicon substrate. The turn-on field, the threshold field and enhancement factor were 1.03 V/mm, 1.43 V/mm and 1.083×105, respectively.
第一章 緒論
1-1 奈米碳管簡介
1-2 奈米碳管結構分析
1-3 奈米碳管主要製成
1-4 奈米碳管應用
1-5 場發射理論
1-6 場發射顯示器簡介
1-6-1 場發射技術介紹
1-6-2 表面傳導型 ( Surface Conduction Electron)
1-6-3 彈道電子面放出型( Ballistic electron Surface emitting Display)
1-6-4 奈米碳管型(Carbon Nanotube)
1-7 軟性電子簡介
1-7-1 軟性電子介紹
1-7-2 軟性電子主要製程
1-8 論文架構

第二章 實驗步驟
2-1 實驗動機
2-2 實驗安排與規劃
2-2-1實驗流程與機台介紹
2-2-2實驗分析與量測儀器介紹
2-2-3實驗設計

第三章 實驗結果與討論
3-1碳管成長與分析
3-1-1 催化金屬之選擇
3-1-2 碳管成長參數
3-1-3 碳管成長之影響分析
3-2氧化層種類選擇與厚度分析
3-2-1 氧化層種類選擇
3-2-2 氧化層厚度分析
3-3 軟性基板轉移製程
3-3-1 軟性基板種類選擇與分析
3-3-2 旋塗參數
3-3-3 基板轉移製程
3-3-4 旋塗完成之Raman分析
3-4 RIE蝕刻的差別
3-4-1軟性基板蝕刻分析
3-4-2氧化層蝕刻分析
3-4-3 蝕刻對碳管的影響分析
3-5 場發射比較與特性分析
3-5-1不同R/H比例下場發射特性改變量之分析
3-5-2奈米碳管陣列轉移前、後場發射差異性分析

第四章 未來展望
4-1大面積轉移製程與穩定性控制
4-2改變撓曲率的狀態下的場發射量測
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[23]東元奈米應材股份有限公司

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