臺灣博碩士論文加值系統

本研究利用無催化劑輔助的氣相傳輸方式在玻璃基版上成長氧化鋅(ZnO)奈米柱結構，探討在不同的成長壓力、載流氣體流量、成長時間對於氧化鋅奈米柱形貌的影響，並且以各種緩衝層在450°C與 350°C的環境下成長奈米柱，發現在低溫成長奈米柱時，緩衝層厚度為55nm為最理想。
對ZnO奈米柱，經由X-Ray繞射儀(X-Ray Diffraction, XRD)顯示成長的奈米線以[ [002]方向為主；在光致激發光譜儀(Photoluminescence, PL)來量測氧化鋅奈米柱在室溫下的發光特性後發現只有在3.289eV位置放光，並沒有氧缺陷造成的綠帶放光情形。
以掃描式電子顯微鏡(Scanning Electron Microscopy, SEM)分析其奈米結構外觀，觀察出在玻璃基板成長出垂直於基板的氧化鋅奈米柱；奈米柱的直徑約為30-60nm，長度為0.5-2μm；穿透式電子顯微鏡(Transmission Electron Microscopy, TEM)證實氧化鋅奈米柱以[002]方向成長於鍍有氧化鋅緩衝層之玻璃基板上。

In this paper, a simple gas phase transport method was used for growing the monocrystalline ZnO nanorods on the amorphous glass substrate in the case of no catalyst; the influence of different growing pressures, gas-carrying flows and growing time on the ZnO nanorods were discussed, and various buffer layers were tried to grow the nanorods in the environment of 450℃ and 350℃ and found that the 55nm thick buffer layers are ideal for growing nanorods at low temperature in order to allow the process to reach conditions for growing nanorods at low temperature.
We found that the growing nanorods grow in the directions of [100] and [200], of which the zinc oxide [002] is the main growing direction, by means of an X-Ray Diffraction (XRD), and that the ZnO nanorods only glow on the 3.289eV position and have no occurrence of shining greenbelt caused by oxygen defects when the photoluminescence spectrometer was used for measuring the characteristics of luminescence of nanorods at room temperature.
With the aid of the scanning electron microscope (SEM), we found that the ZnO nanorods grow vertically on the glass substrate by analyzing the nanometer structure; the nanorods approximate 30nm to 60nm in diameter and 0.5μm to 2μm in length; we used the transmission electron microscope (TEM) to observe the ZnO nanorods and confirmed that they grow on the glass substrate containing the zinc oxide buffer layer in the direction of 002.

第一章 緒論 1
1.1 文獻回顧 1
1.2 氧化鋅(Zinc Oxide, ZnO)結構與特性 5
第二章 奈米結構成長機制及方式簡介 9
2.1 需要催化劑之成長機制 9
2.1.1. 氣-液-固成長(Vapor-Liquid-Solid (VLS) Growth) 9
2.1.2.液-液-固成長(Solution-Liquid-Solid (SLS) Growth) 10
2.2 不需要催化劑之成長機制 11
2.2.1 氣-固成長(Vapor-Solid (VS) Growth) 11
2.3 熱蒸鍍法(THERMAL EVAPORATION) 11
2.4 脈衝雷射蒸鍍法(PULSED LASER DEPOSITION) 13
第三章 實驗架構及方法 15
3.1 實驗流程 15
3.2. 實驗配置與設備 16
3.2.1 實驗材料 16
3.2.2 實驗細部與架構 18
3.3 掃描式電子顯微鏡(SEM) 22
3.4 PHOTOLUMINESCENCE光譜（PL） 24
3.5 X-RAY繞射儀（XRD） 25
3.6原子力顯微鏡(AFM) 28
3.7穿透視電子顯微鏡(TEM) 30
第四章 實驗結果與討論 32
4.1氧化鋅緩衝層 32
4.1.1 不同距離對氧化鋅緩衝層之影響 33
4.1.2成長時間對氧化鋅緩衝層之影響 36
4.1.3基板溫度對氧化鋅緩衝層之影響 38
4.2氧化鋅奈米柱 39
4.2.1不同成長條件之緩衝層對奈米柱之影響 39
4.2.2載流氣體流量對於奈米柱的影響 42
4.2.3成長壓力對於奈米柱的影響 43
4.2.4改變成長時間 45
4.3低溫成長奈米柱 46
4.3.1奈米柱於450°C製程 46
4.3.2提高450°C製程時間 49
4.3.3 奈米柱於350°C製程 50
4.3.4 提高350°C製程時間 52
4.3.5 低溫成長緩衝層並以450°C成長奈米柱 53
4.3.6 低溫成長緩衝層並以350°C成長奈米柱 54
4.4氧化鋅奈米柱之XRD分析 55
4.5氧化鋅奈米柱之PL分析 57
4.6氧化鋅奈米柱之TEM分析 59
第五章　結論 61
參考文獻 62

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