臺灣博碩士論文加值系統

本論文使用架設簡單、製程快速及成本低廉的超音波噴霧熱解法，在藍寶石基板上備製出摻銅之氧化鋅（CZO）薄膜，以探討銅之摻雜對氧化鋅晶體結晶結構與導電特性之影響。沉積之樣品分別利用X光繞射儀（XRD）觀察晶體結構以及霍爾（Hall）量測儀量測薄膜電性。
本實驗分別以氮氣(N2)與氧氣(O2)作為導流氣體，在基板溫度600°C沉積CZO薄膜。從XRD分析得知，氧化鋅薄膜皆在（002）方向具有良好的結晶性，隨著摻雜濃度比例的增加，（002）方向繞射峰值會向大角度位移，說明摻雜物是以取代的方式進入氧化鋅。而霍爾量測分析指出，摻雜濃度為1at％時，CZO薄膜轉變成P型半導體。導流氣體為氧氣所成長之薄膜於氧氣中退火30分鐘後具有最低電阻率1.17×10^-3 Ω-cm，最高之載子濃度2.61×10^20 cm-3與遷移率22.04 cm2/Vs。因此，本實驗利用超音波噴霧熱解法製作摻銅之氧化鋅薄膜，可成功摻雜出具有良好電性的P型半導體薄膜。

In this study, we investigated the Cu-doping effects on ZnO films deposited on sapphire by ultrasonic spray technique. The structure properties of ZnO thin films were characterized by X-ray diffraction（XRD）. The electric properties were analyzed by Hall-effect measurement.
In this study , we deposited the CZO film at temperature of 600°C under using nitrogen (N2) and oxygen (O2) as the diversion of gas. As results of X-ray diffraction revealed that the CZO thin films had great crystallinity on the c-axis direction, and made the（002）peak shifted to higher angle value for higher doping ratio. The Hall-effect measurement showed that the best p-type Cu-doped ZnO films were obtained when 1at% of copper(II) were doped at temperature of 600°C under these optimal deposition conditions, the film showed a low resistivity of 1.17×10^-3 Ω-cm, high hole concentration of 2.61×10^20 cm-3 and high mobility of 22.04 cm2/Vs.. In this study, the Cu-doped p-type ZnO thin films were successfully grown by ultrasonic spray pyrolysis with high carrier concentration, high mobility, and low resistivity.

摘　要----------------------i
ABSTRACT-------------------ii
誌謝------------------------iii
目錄------------------------iv
表目錄-----------------------vi
圖目錄-----------------------vii
第一章 緒論-------------------1
1.1 前言---------------------1
1.2 研究目的------------------2
第二章 理論基礎----------------3
2.1薄膜介紹-------------------3
2.1.1 何謂薄膜-----------------3
2.1.2 薄膜沉積原理--------------3
2.1.3 薄膜結構成長模式-----------5
2.1.4 製程條件對薄膜結構成長之影響-6
2.1.5 薄膜電性------------------7
2.2 氧化鋅材料晶格結構與特性-------8
2.3 氧化鋅之摻雜----------------12
2.3.1 N-type氧化鋅之摻雜--------13
2.3.2 P-type氧化鋅之摻雜--------13
2.3.3 P-type氧化鋅薄膜之備製方法-15
2.4 退火系統-------------------17
第三章 實驗流程與架構------------19
3.1 實驗步驟-------------------20
3.1.1 實驗材料-----------------21
3.1.2 溶液調製-----------------21
3.1.3 基板裁切與清洗------------22
3.2 超音波噴霧熱解系統-----------23
3.3 高週波感應加熱原理-----------27
3.4 量測儀器-------------------28
3.4.1 X-ray繞射分析系統---------28
3.4.2 霍爾量測系統 --------------30
第四章 實驗結果與討論-------------37
4.1 通氮氣之銅摻雜氧化鋅薄膜 (CZO)-37
4.1.1 不同沉積溫度對CZO薄膜之影響--37
4.1.2 銅摻雜比對CZO薄膜之影響-----39
4.1.3 結構分析------------------39
4.1.4 電性分析------------------41
4.2 通氧氣之銅摻雜氧化鋅薄膜 (CZO)-44
4.2.1 不同沉積溫度對CZO薄膜之影響--44
4.2.2 銅摻雜比對CZO薄膜之影響-----45
4.2.3 結構分析------------------46
4.2.4 電性分析------------------46
4.2.5 退火處理------------------49
第五章 結論----------------------52
參考文獻------------------------53

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