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研究生:方思涵
研究生(外文):Szu-Han Fang
論文名稱:以反應共濺鍍法製備氧化鋅鋁透明導電薄膜之性質研究
論文名稱(外文):Study of AZO Transparent Conducting Filmsby Reactive Cosputtering
指導教授:陳貞光
指導教授(外文):Jhewn-Kuang Chen
口試委員:邱國基邱德威
口試日期:2012-07-12
學位類別:碩士
校院名稱:國立臺北科技大學
系所名稱:材料科學與工程研究所
學門:工程學門
學類:材料工程學類
論文種類:學術論文
論文出版年:2012
畢業學年度:100
語文別:中文
論文頁數:67
中文關鍵詞:氧化鋁鋅反應磁控濺鍍氧氣流量載子遷移率
外文關鍵詞:AZOReactive magnetron sputteringoxygen flow ratecarrier mobility
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本研究以反應磁控濺鍍法在玻璃基板上,利用純鋁與純鋅與氧氣反應沉積掺鋁氧化鋅(AZO) 透明導電薄膜,相較於採用AZO陶瓷靶,真空腔內必須通入氧氣使金屬鋅和鋁和氧氣結合形成AZO 鍍膜,此實驗探討氧氣流量、氬氣流量與利用射頻濺鍍功率控制鋁含量對於掺鋁氧化鋅薄膜的結構及性質之影響。實驗結果顯示在不同濺鍍功率下薄膜皆呈現{002}的優選方向,隨著濺鍍功率逐步提高至150 W時,鋁之摻雜傾向形成非晶型態的氧化鋁,造成薄膜內與氧親和力相對較弱的鋅原子無法與氧原子結合,而形成純鋅的結晶相。當基板溫度為200°C,氧氣流量2 sccm、氬氣流量23 sccm條件下,所獲得薄膜的電阻率最低為7.98×10-1 Ω?cm,同時該薄膜的穿透率在可見光範圍皆高於80%。而在1 sccm氧氣流量下濺鍍時,薄膜穿透率降為大約50 %,主要由於氧氣含量不足以使鋅、鋁和氧氣形成氧化物,而偏向形成金屬薄膜,也導致電阻率大幅降低。由霍爾量測顯示,隨著氬氣流量24 sccm調降至22 sccm、氧氣流量由1 sccm提高到3 sccm時,由於氧空缺隨之下降,導致載子散射頻率下降,使載子遷移率從0.547 cm2/Vs大幅提高到35.71 cm2/Vs,顯示氧流量對於AZO 薄膜的性質有顯著的影響。

In this study, reactive magnetron sputtering on glass substrates, use of the pure aluminum and pure zinc reacts with oxygen deposited aluminum doped zinc oxide (AZO) transparent conductive films, compared with AZO ceramic target, the vacuum chamber must pass into the oxygen metal zinc, aluminum and oxygen combine to form the AZO coating, this experiment to investigate the flow of oxygen, argon gas flow with the use of RF sputtering power to control the aluminum content of the structure and properties of aluminum doped zinc oxide films. The experimental results show that thin films under different sputtering power are showing {002} preferred orientation, as the sputtering power is gradually increased to 150 W, aluminum doped tendency to the formation of amorphous type of alumina, resulting in films with oxygen relatively weak affinity of the zinc atoms can not combine with oxygen atoms, the formation of the crystalline phase of pure zinc. When the substrate temperature of 200°C, oxygen gas flow of 2 sccm, and argon gas flow of 23 sccm, the resistivity of the films, a minimum of 7.98 × 10-1 Ω?cm in the transmittance of the film in the visible range are 80%. 1 sccm oxygen flow sputtering, the film transmittance is reduced to about 50%, mainly due to the oxygen content is insufficient to make zinc, aluminum and oxygen to form oxides, and tend to form a metal film has also led to significantly reduce the resistivity. Hall measurements show that the argon gas flow of 24 sccm tune to 22 sccm, oxygen flow from 1 sccm to 3 sccm, due to the fall of oxygen vacancies, resulting in the carrier scattering frequency decreases, so that the carrier mobility a substantial increase from 0.547 cm2/Vs to 35.71 cm2/Vs, the oxygen flow have a significant impact on the nature of the AZO thin films.

摘要 i
ABSTRACT ii
致謝 iii
目錄 v
表目錄 viii
圖目錄 ix
第一章 緒論 1
1.1 前言 1
1.2 研究動機及目的 2
第二章 文獻回顧及理論基礎 4
2.1透明導電薄膜 4
2.1.1 透明導電薄膜概論 4
2.1.2 透明導電膜之應用 5
2.1.3 透明導電膜之製備 6
2.2濺鍍原理 7
2.2.1 電漿定義 7
2.2.2 輝光放電 9
2.2.3 反應性濺鍍(Reactive Sputtering) 11
2.2.4 射頻濺鍍(RF Sputtering System) 13
2.2.5 磁控濺鍍(Magnetron Sputtering) 13
2.3薄膜沉積過程與特性 14
2.3.1 薄膜成長理論[40] 14
2.3.2 薄膜之內應力 17
2.4氧化鋅鋁透明導電薄膜 19
2.4.1 氧化鋅晶體結構與特性 19
2.4.2 AZO (ZnO:Al)晶格結構 21
2.4.3 AZO薄膜之電學性質 21
2.4.4 AZO薄膜之光學性質 22
第三章 實驗方法與步驟 24
3.1實驗材料 24
3.1.1 靶材材料 24
3.1.2 工作氣體 24
3.1.3 基板種類 24
3.1.4 化學藥品 24
3.2 實驗步驟 25
3.2.1 基板清洗 26
3.2.2 鍍製參數 27
3.3 實驗設備與原理 29
3.3.1 磁控濺鍍機 (Magnetron reactive sputtering) 29
3.3.2 快速退火(Rapid thermal annealing)系統 29
3.3.3 X光繞射儀(X-ray diffraction) 30
3.3.4 掃描式電子顯微鏡(Scanning electron microscope) 31
3.3.5 表面輪廓儀(Surface profiler) 32
3.3.6 四點探針阻抗分析儀(Four point probe) 33
3.3.7 霍爾效應量測系統(Hall effect measurement system) 34
3.3.8 紫外光/可見光分光光譜儀(UV-Vis spectrometer) 35
第四章 結果與討論 36
4.1 AZO(ZnO:Al) 氧含量對薄膜性質之影響 36
4.1.1 AZO薄膜微結構分析 36
4.1.2 AZO薄膜膜厚分析 39
4.1.3 AZO薄膜電學性質量測 41
4.1.4 AZO薄膜光學性質量測 44
4.2鋁之摻雜量對薄膜性質之影響 46
4.2.1薄膜微結構分析 46
4.2.2薄膜表面形貌觀察 47
4.2.3薄膜電學性質量測 49
4.2.4薄膜光學性質量測 52
4.3退火溫度對薄膜性質之影響 53
4.3.1薄膜微結構分析 53
4.3.2薄膜表面形貌觀察 56
4.3.3薄膜電學性質量測 59
第五章 結論 61
參考文獻 63



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