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研究生:陳俊宏
研究生(外文):Chun-hung Chen
論文名稱:光電高分子靜電紡絲之研究
論文名稱(外文):Study of Electro-spinning of Photoelectric Polymer
指導教授:廖義田
指導教授(外文):Yih-Tyan Liao
口試委員:陳志恆吳汝瑜
口試日期:2012-07-30
學位類別:碩士
校院名稱:國立臺北科技大學
系所名稱:有機高分子研究所
學門:工程學門
學類:化學工程學類
論文種類:學術論文
論文出版年:2012
畢業學年度:100
語文別:中文
論文頁數:84
中文關鍵詞:聚噻靜電紡絲二氧化鈦染料敏化太陽能電池
外文關鍵詞:PolythiopheneElectro-spinningTitanium dioxideDye-sensitized solar cell
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本研究為合成光電高分子,再經由靜電紡絲加工後,研究其光電性質。首先合成噻吩單體3HT、矽氧烷修飾之TESTH單體及其他官能基的光電材料後,以靜電訪絲技術做成奈米纖維膜。再以FTIR、NMR、X-ray、SEM將其定性。
  經由靜電紡絲之光電材料,探討其在太陽能電池、有機發光二極體、液晶顯示器應用的潛力。結果顯示,經矽氧烷處理後的光電材料,其耐久性有很大之提升且具有優異的物性。將來可應用於light emitting diode, thin film transistor。


In this study, it is that synthesized photoelectric polymer which is electro-spun and research its photoelectric property. Firstly, we synthesized 3HT monomer、TESTH which is silane grafted on thiophene and other functional group materials. These monomer was synthesized by electrochemical polymerization, after synthesized, these polymers was electro-spun to nanofiber. And than qualitative have been done by FTIR、NMR、X-ray and SEM.
The photoelectric material made by electro-spinning was discussed its potential that applied in solar cell、organic light emitting diode、liquid crystal displayer. As result, the durability of silane grafted photoelectric materials were modified and have superior physical property. It could be applied in light emitting diode、thin film transistor.


摘 要 i
ABSTRACT ii
誌 謝 iii
目 錄 iv
表目錄 vi
圖目錄 vii
第一章 緒論 1
1.1 前言 1
1.2 研究動機 2
第二章 文獻回顧 3
2.1 共軛導電高分子 3
2.2 有機矽高分子 5
2.3 聚噻吩系統之介紹 7
2.3.1 聚噻吩之簡介 7
2.3.2 聚噻吩之結構及其聚合方式 7
2.3.3 聚噻吩之反應機構 12
2.3.4 聚噻吩之反應機構 13
2.3.5 聚噻吩之摻雜理論 17
2.4 二氧化鈦的介紹 19
2.4.1 二氧化鈦簡介 19
2.4.2 二氧化鈦結構與特性 19
2.4.3 二氧化鈦的製備方式 22
2.5 靜電紡絲(Electrospinning)技術 24
2.5.1 靜電紡絲簡介 24
2.5.2 靜電紡絲原理 25
2.5.3 靜電紡絲裝置 26
2.6 染料敏化太陽能電池 27
2.6.1 染料敏化太陽能電池之原理 27
2.6.2 染料敏化太陽能電池之各別組成 29
2.7 場效電晶體(Field Effect Transistor, FET) 34
第三章 實驗方法 37
3.1 藥品及儀器設備 37
3.2 聚矽氧烷噻吩之聚合反應 40
3.2.1 導電高分子P(3-HT-co-TESTH)之合成反應 40
3.2.1.1 TESTH及3-HT之單體合成反應 40
3.2.1.2 P3HT及P(3-HT-co-TESTH)之聚合反應 42
3.2.2 PS3HT聚矽氧烷噻吩奈米拓印 43
3.2.3 聚矽氧烷噻吩之靜電紡絲 45
3.3 二氧化鈦奈米纖維電聚合噻吩膜製備 47
3.3.1 靜電紡絲法製備二氧化鈦奈米纖維膜 47
3.4 聚噻吩及其共聚物之化學結構鑑定 49
3.4.1 核磁共振儀(Nuclear Magnetic Resonance Spectroscopy) 49
3.5 聚噻吩及二氧化鈦奈米纖維膜之外觀及晶相分析 51
3.5.1 掃描式電子顯微鏡(SEM) 51
3.5.2 X光粉末繞射光譜(XRD) 52
第四章 結果與討論 55
4.1 聚噻吩及其共聚物之結構鑑定 55
4.2 二氧化鈦與聚噻吩奈米纖維膜表面及結晶相分析 60
4.2.1 掃描式電子顯微鏡分析 60
4.2.2 XRD晶相分析 69
4.3 奈米拓印之SEM圖 71
第五章 結論 77


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