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研究生:朱健誠
研究生(外文):Jian-Cheng Chu
論文名稱:GeSbTe薄膜之微結構特性與太陽能電池的效率研究
論文名稱(外文):Study of the microstructure and characterization for GeSbTe solar cell
指導教授:王錫九
指導教授(外文):Shea-Jue Wang
口試委員:李文德魏茂國
口試委員(外文):Win-Der LeeMao-Kuo Wei
口試日期:2012-07-17
學位類別:碩士
校院名稱:國立臺北科技大學
系所名稱:材料及資源工程系研究所
學門:工程學門
學類:材料工程學類
論文種類:學術論文
論文出版年:2012
畢業學年度:100
語文別:中文
論文頁數:70
中文關鍵詞:GeSbTe硫屬化合物直流濺鍍Ge2Sb2Te5穿透率太陽能電池光電轉換效率
外文關鍵詞:GeSbTe chalcogenidesDC sputterGe2Sb2Te5penetrationsolar cellefficiency
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本實驗使用直流濺鍍法製備單層與雙層GeSbTe化合物薄膜,發現藉由雙層膜的製程可以得到結晶性質更佳的薄膜。本實驗係以直流濺鍍 15W作為薄膜沉積的濺鍍功率,第一層以濺鍍時直接加熱,或濺鍍後進行退火處理等不同的製程方式,做為本實驗比較樣品;另外,第二層GeSbTe薄膜也以直接加熱及濺鍍後進行退火處理做區別。
經由XRD的觀察發現,不論是單層膜或是經過直接加熱及退火處理的雙層膜樣品均為Ge2Sb2Te5的結構相,而且退火處理的樣品繞射圖案的峰值較明顯;且由SEM觀察可知,單層GeSbTe薄膜以及雙層GeSbTe厚度皆為60奈米,而經過兩次後熱處理後的雙層膜表面會存在許多類似多晶晶界的結構;配合UV-visible光譜儀的量測可得知這些晶界的出現使得雙層膜的穿透率有下降的趨勢;最後根據Hall量測儀的量測,以第一層直接加熱,第二層退火處理的雙層GeSbTe薄膜具有最高的載子濃度。電池元件結構分別為ITO/GST/n-Si/Cr以及ITO/GST/GST/n-Si/Cr所形成之結構。而其中直流濺鍍功率15 W之60奈米厚度的雙層GeSbTe薄膜電池元件經過兩次後熱處理皆為150℃持溫30分鐘的製程,具有0.311%的最高光電轉換效率。


This study examined that the single layer GeSbTe films and bi-layer GeSbTe films were deposited by the DC-sputtering system. The better crystalline properties were obtained by improving with bi-layer fabrication process. The film was prepared by sputtering system with dc power of 15W. The deposited films were made with single layer and bi-layer structure, heated with two conditions, direct heating and post annealing. In bi-layer films, the first layer onto substrate and second layer film are heated with various heating sequence under the above conditions.
The deposited films were confirmed by x-ray diffraction, scanning electronic microscopy, UV-visible spectrometer, and Hall measurement. The single layer GeSbTe films show less intensity of diffraction peaks. The annealing or directly heating samples both show Ge2Sb2Te5 phase through XRD. However the annealing samples have obvious diffraction peaks. The SEM figures display that the single GeSbTe film thick is 60nm, bi-layer GeSbTe films have many grain boundaries after twice annealing on surface. The UV-visible spectrum shows that the grain boundaries result in decreasing the transmittance. The electrical property of the films with bi-layer structure which was directly heating for the first layer and the post annealing for second show that bi-layer GeSbTe films through Hall measurement has the higher carrier concentration.
The cell structure is stacked ITO/GST/n-Si/Cr. The device with bi-layer GeSbTe films with two post annealing steps during 150℃ for 30 minutes has achieved 0.311% conversion efficiency in its stack-junction solar cell.


摘 要 I
ABSTRACT II
誌 謝 IV
目 錄 V
圖目錄 VII
表目錄 XI
第一章 緒論 1
1.1 前言 1
1.2 研究動機與目的 3
第二章 文獻回顧與理論基礎 4
2.1太陽能電池 4
2.1.1太陽能電池發電原理 5
2.1.2太陽能電池轉換效率 8
2.1.3 太陽能電池迴路之串聯與並聯電阻原因 10
2.2 太陽能電池種類 11
2.2.1 單晶矽太陽能電池 12
2.2.2 多晶矽太陽能電池 13
2.2.3 非晶矽太陽能電池 14
2.2.4染料敏化型太陽能電池 15
2.2.5 化合物半導體太陽能電池 15
2.3 硫屬化合物(CHALCOGENIDES) 16
2.3.1 GeSbTe硫屬化合物 16
2.3.2 GeSbTe鍵結特性 21
2.3.3 GeSbTe電性特性 22
2.3.4 GeSbTe光學特性 23
第三章 實驗方法與設備 26
3.1 實驗材料 26
3.1.1 GeSbTe靶材 26
3.1.2 基板種類 26
3.1.3 Cr、ITO電極靶材 27
3.2 實驗設備 28
3.2.1 濺鍍系統設備 28
3.2.2 快速退火爐設備 29
3.3 實驗步驟 30
3.3.1 基板清洗 30
3.3.2 薄膜與元件製作方法與流程 33
3.3.3 各靶材之薄膜濺鍍參數 35
3.3.4 快速熱退火方式 36
3.4 儀器量測設備 37
3.4.1 場發射掃描式電子顯微鏡 37
3.4.2 X-ray繞射儀 38
3.4.3 紫外光卅可見光分光光譜儀 39
3.4.4 電阻量測儀 39
3.4.5 霍爾效應量測儀 40
3.4.6 光電轉換效率儀器 41
第四章 結果與討論 43
4.1 單層GESBTE薄膜特性分析 43
4.1.1單層GeSbTe薄膜表面形貌與元素成分分析 43
4.1.2 單層GeSbTe薄膜結構與電性探討 45
4.1.3 單層GeSbTe薄膜結構與光學性質探討 48
4.2 雙層GESBTE薄膜特性分析 49
4.2.1 雙層GeSbTe薄膜表面形貌與元素成分分析 49
4.2.2 雙層GeSbTe薄膜結構與電性探討 51
4.2.3 雙層GeSbTe薄膜結構與光學性質探討 58
4.3 太陽能電池效率量測之研究 59
4.3.1 未照光之I-V特性圖量測 59
4.3.2 照光之I-V特性圖量測 60
4.3.3 電池效率量測之比較 61
第五章 結論 65
參考文獻 66


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