跳到主要內容

臺灣博碩士論文加值系統

(3.236.124.56) 您好!臺灣時間:2021/07/31 06:09
字體大小: 字級放大   字級縮小   預設字形  
回查詢結果 :::

詳目顯示

: 
twitterline
研究生:邱鼎皓
研究生(外文):Ting-Hao Chiou
論文名稱:射頻磁控濺鍍製備CuAlO2透明導電薄膜之特性
論文名稱(外文):The Properties of CuAlO2 Transparent Conductive Film Prepared by Radio Frequency Magnetron Sputter
指導教授:王錫福
指導教授(外文):Sea-Fue Wang
口試委員:郭俞麟楊重光邱德威徐永富
口試日期:2012-07-27
學位類別:碩士
校院名稱:國立臺北科技大學
系所名稱:材料及資源工程系研究所
學門:工程學門
學類:材料工程學類
論文種類:學術論文
論文出版年:2012
畢業學年度:100
語文別:中文
論文頁數:80
中文關鍵詞:透明導電薄膜CuAlO2射頻磁控濺鍍
外文關鍵詞:Transparent conductive filmCuAlO2RF magnetron sputtering
相關次數:
  • 被引用被引用:0
  • 點閱點閱:270
  • 評分評分:
  • 下載下載:22
  • 收藏至我的研究室書目清單書目收藏:1
本研究是探討濺鍍溫度、濺鍍功率與氣體流量比率等製程參數,在射頻磁控濺鍍製備p型CuAlO2薄膜時對薄膜之影響。本實驗改變之製程參數如濺鍍溫度(100oC ~ 400oC),濺鍍功率(50 W ~ 200 W),及氣體流量O2/ (Ar + O2)比率(0% ~ 100%),經XRD分析出不同製程參數製備之薄膜均呈現非晶結構。經由各項檢測後,得知最佳製程參數在濺鍍溫度400oC,濺鍍功率150 W,氣體流量O2/ (Ar + O2)比率20%,並於N2氣氛下以800oC快速退火一小時,此時透光率只達36.75%,片電阻值最低可到1.25×105 Ω/□,且其載子濃度可達4.08 × 1018 cm-3且為正值,遷移率則為1.74 cm2/ s‧V,而電阻率最低為0.882 Ω‧cm。雖然膜層有不錯的電性,但仍無法達到良好透光率的要求,因此必須再以此濺鍍條件加以改良,以期望能做出良好的透明導電薄膜。

P-type transparent conducting thin films of copper aluminate were prepared by radio frequency magnetron sputter of a commercial CuAlO2 target which purity is 99.95%. Films of CuAlO2 were deposited on Eagle glass substrates. The sputtering was performed in difference process parameters, such as O2 / (Ar + O2) ratio (0% ~ 100%) atmosphere, the substrate temperature (100oC~400oC), and the sputtering power ( 50 W~ 200 W). X-ray diffraction (XRD) spectra of the films showed the peaks which could be assigned with those of the non-crystalline CuAlO2. UV–Visible spectrophotometric measurement showed low transparency of the films in the visible region.
The best process parameters were O2 / (Ar + O2) ratio of 20%, the substrate temperature of 400oC, the sputtering power of 150 W, and then rapid thermal annealing of temperature to 800oC in one hour under N2 atmosphere. Direct band gaps were found to exist and corresponding estimated values was 2.69 eV. The room temperature resistivity of the film was fairly low and 0.882 Ω‧cm. Room temperature Hall effect measurement also indicated positive value of carrier concentration and Hall mobility, and their values were 4.08 × 1018 cm-3 and 1.74 cm2 / s‧V, respectively.


摘 要 i
ABSTRACT ii
致 謝 iv
目 錄 vi
圖目錄 ix
表目錄 xii
第一章 緒論 1
1-1 前言 1
1-2 研究動機 2
1-3 研究目的 4
第二章 文獻回顧 5
2-1 透明導電薄膜 5
2-1-1 n-type TCO 5
2-1-2 p-type TCO 6
2-1-3 光學性質 6
2-1-4 導電性質 7
2-2 CMVB理論 9
2-3 CuAlO2簡介 12
2-4 CuAlO2相關文獻 17
2-5 濺鍍原理 24
2-5-1 基本原理 24
2-5-2 電漿理論 24
2-5-3 直流濺鍍 25
2-5-4 射頻濺鍍 25
2-5-5 磁控濺鍍 25
2-6 薄膜成核與成長 27
2-7 薄膜表面形態 30
第三章 研究方法與實驗步驟 32
3-1 材料的準備 32
3-2 實驗步驟 33
3-3 實驗設備 35
3-3-1 濺鍍系統 35
3-3-2 玻璃基板之準備 36
3-3-3 快速退火( Rapid Thermal Annealing ) 37
3-4 CuAlO2薄膜性質量測 38
3-4-1 XRD晶體結構分析 38
3-4-2 SEM膜厚量測 38
3-4-3 光學性質量測 39
3-4-4 四點探針量測 40
3-4-5 霍爾(Hall)量測 40
3-4-6 EPMA元素分析 41
3-5 CuAlO2薄膜參數建立 43
第四章 結果與討論 46
4-1 Cu-Al-O薄膜之XRD分析 46
4-2 Cu-Al-O薄膜之SEM分析 50
4-3 Cu-Al-O薄膜之元素分析 61
4-4 Cu-Al-O薄膜之透光率分析 63
4-5 Cu-Al-O薄膜之四點阻抗分析 68
4-6 Cu-Al-O薄膜之霍爾分析 72
第五章 結論 75
第六章 參考文獻 76


[1]楊明輝,「透明導電膜材料與成膜技術的新發展」,工業材料,189,2002,第161-174頁。
[2]H. Kawazoe, M. Yasukawa, H. Hyodo, M. Kurita, H. Yanagi and H. Hosono, “P-type electrical conduction in transparent thin films of CuAlO2,” Nature, Vol. 389, 1997, pp. 939-942.
[3]陳璟鋒,P 型氧化鎳薄膜之製備與其光性、電性及材料特性之研究,國立成功大學材料科學及工程學系碩士論文,2004年,第1-11頁。
[4]葉靜佳,P型CuAlO2薄膜光學性質之研究,國立成功大學材料科學及工程學系碩士論文,2009年,第4-5頁。
[5]H. Kawazoe, H. Yanagi, K. Ueda, and H.Hosono,“Transparent p-type conducting oxide: design and fabrication of p-n heterojunctions,” MRS Bulletin, Vol. 25(8), 2000, pp. 28.
[6]F. A. Benko, and F.P. Koffyberg, “Opto-electronic properties of CuAlO2,” Jourenal of Physics and Chemistry of Solids, Vol. 48, 1987, pp. 57-59.
[7]J. P. Doumerc, A.Ammar, A. Wichainchai, M. Pouchard, and P. Hagenmuller, “Sur quelques nouveaux composes de structure de type delafossite,” Jourenal of Physics and Chemistry of Solids, Vol. 48, 1987, pp. 37-43.
[8]I. Hamada, and H. Katayama-Yoshida, “Energetic of native defects in CuAlO2,” Physica B, Vol. 376-377, 2006, pp. 808-811.
[9]T.Ishiguro, N. Ishizawa, N. Mizutani, and M. Kato, “A New Delafossite-Type Compound CuY02,” Journal of Solid Sate Cheistry, Vol. 49, 1983, pp. 232-236.
[10]T.Ishiguro, N. Ishizawa, N. Mizutani, and M. Kato, “High temperature structural investigation of the delafossite type compound CualO2 ,” Journal of Solid Sate Cheistry, Vol. 41, 1982, pp. 132-137.
[11]T.Ishiguro, N. Ishizawa, N. Mizutani, and M. Kato, “Single-crystal growth and crystal structure refinement of CuAlO2,” Journal of Solid Sate Cheistry, Vol. 40, 1981, pp. 170.
[12] K.T. Jacob, and C.B. Alcock, “Thermodynamics of CuAlO2 and CuAl2O4 and phase equilibria in the system Cu2O-CuO-Al2O3,” Journal of The American Ceramics Society, Vol. 58, 1975, pp. 192-195.
[13]B.J. Ingram , T.O. Mason, R. Asahi, K.T. Park, and J. Freeman“Electronic structure and small polaron hole transport of copper aluminate,” Physical Review B, Vol. 64, 2001, 155114.
[14]M.S. Lee, T.Y. Kim, and D. Kim, “Anisotropic electrical conductivity of delafossite-type CuAlO2 laminar crystal,” Applied Physics Letters, Vol. 79, 2001, pp. 2028-2030.
[15]H. Ohta, M. Orita, M. Hirano and H. Hosono, “Fabrication and Characterization of ultraviolet-emitting diodes composed of transparent p-n heterojunction, p-SrCu2O2 and n-ZnO,” Journal of Applied Physics, Vol. 89, 2001, pp. 5720-5725.
[16]X.G. Zheng, K. Taniguchi, A. Takahashi, Y. Liu, C.N. Xu, “Room temperature sensing of ozone by transparent p-type semiconductor CuAlO2,” Applied Physics Letters, Vol. 85, 2004, pp. 1728-1729.
[17]K.Tonooka, H. Bando, Y. Aiura, “Photovoltaic effect observed in transparent p–n heterojunctions based on oxide semiconductors,” Thin Solid Films, 445, 2003, pp.327.
[18]H. Hosono, H. Ohta, K. Hyashi, M. Orita, and H. Hirano, “Near-UV emitting diodes based on a transparent p–n junction composed of heteroepitaxially grown p-SrCu2O2 and n-Zno,” Journal of Crystal Growth, Vol. 496, 2002, pp. 237-239.
[19]G.H. Takaoka, H. Noguchi, and Y. Hironaka, “Production of liquid cluster ions and their application to surface etching,” Nuclear Instruments and Methods in Physics Research B, Vol. 242, 2005, pp. 100-103.
[20]T. Fujimura, Shun-ichiro Tanaka, “In-situ high temperature X-ray diffraction study of Cu/Al2O3 interface reactions,” Acta Materialia, Vol. 46, 1998, pp. 3057-3061.
[21]Chin Hock Ong, and Hao Gong, “Effects of aluminum on the properties of p-type Cu–Al - O transparent oxide semiconductor prepared by reactive co-sputtering,” Thin Solid Films, Vol. 445, 2003, pp. 299-303.
[22]Shanmin Gao, Yan Zhao, Pingping Gou, Nan Chen and Yi Xie, “Preparation of CuAlO2 nanocrystalline transparent thin films with high conductivity,” Nanotechnology, Vol. 14, 2003, pp. 538-541.
[23]A.N. Banerjee, S. Kundoo, K.K. Chattopadhyay, “Synthesis and characterization of p-type transparent conducting CuAlO2 thin film by DC sputtering,” Thin Solid Films, Vol. 440, 2003, pp. 5-10.
[24]A.N. Banerjee, R. Maity, K.K. Chattopadhyay, “Preparation of p-type transparent conducting CuAlO2 thin films by reactive DC sputtering,” Materials Letters, Vol. 58, 2003, pp.10-13.
[25]Dae-Sung Kim and Se-Young Choi, “Wet-oxidation effect on p-type transparent conducting CuAlO2 thin film,” Physica Status Solidi (a), 202, No. 15, 2005, R167-R169.
[26]J.Cai and H.Gong, “The influence of CuAl ratio on properties of chemical-vapor-deposition-grown p-type Cu–Al–O transparent semiconducting films,” Journal of Applied Physics, Vol. 89, 2005, 033707.
[27]J.H. Shy and B.H. Tseng, “Characterization of CuAlO2 thin film prepared by rapid thermal annealing of an Al2O3/Cu2O/sapphire structure,” Journal of Physics and Chemistry of Solids, Vol. 66, 2005, pp. 2123-2126.
[28]A.N. Banerjee, C.K. Ghosh, K.K. Chattopadhyay, “Effect of excess oxygen on the electrical properties of transparent p-type conducting CuAlO2+x thin films ”, Solar Energy Materials & Solar Cells, Vol. 89, 2005, pp. 75-83.
[29]A.Sivasankar Reddy, P.Sreedhara Reddy, S.Uthanna, and G.Mohan Rao, “Characterization of CuAlO2 films prepared by dc reactive magnetron sputtering,” Journal of Mater Electron, Vol. 17, 2006, pp. 615-620.
[30]J.H. Shy, B.H. Tseng, “A novel method for preparing CuAlO2 thin films and the film properties ,” Journal of Physics and Chemistry of Solids, Vol. 69, 2008, pp. 547-550.
[31]W.Lan, W.L. Cao, M. Zhang, X. Q. Liu, Y.Y.Wang, E.Q.Xie , and H.Yan, “Annealing effect on the structural, optical, and electrical properties of CuAlO2 films deposited by magnetron sputtering ,” Journal of Materials Science, Vol. 44, 2009, pp. 1594-1599.
[32]A.Sivasankar Reddy, Hyung-Ho Park, G.Mohan Rao, S.Uthanna, P.Sreedhara Reddy, “Effect of substrate temperature on the physical properties of dc magnetron sputtered CuAlO2 films ”, Journal of Alloys and Compounds, Vol. 474 ,2009, pp. 401-405.
[33]Min Fang, Haiping He, Bin Lu, Weiguang Zhang, Binghui Zhao, Zhizhen Ye, Jingyun Huang, “Optical properties of p-type CuAlO2 thin film grown by rf magnetron sputtering ”, Applied Surface Science, Vol. 257 ,2011, pp. 8330-8333.
[34]Kunio Okimura, Akira Shibata, Naohiro Maeda, and Kunihide Tachibana, “Preparation of rutile TiO2 films by R. F. magnetron sputtering,” Journal of Applied Physics, Vol. 34, 1995, pp. 4950-4955.
[35]Matthew C. Nielsen, Jin-Young Kim, Eugene J. Rymaszewski, “Composite and Multilayered TaOx-TiOy High Dielectric Constant Thin Films,” IEEE, Toh-Ming Lu, Atul Kumar, and H. Bakhru IEEE Transactions on Components, Packing, And Manufacturing Technology-part B, Vol. 21, No. 3,1998, pp. 274-280.
[36]L. Davis, “Properties of Transparent Conducting Oxides Deposited at Room Temperature,” Thin Solid Films, Vol. 236, 1993, pp. 1.
[37]H. L. Hartnagel, A. K. Jain, and C. Jagadish, Semiconducting Transparent Thin Films, Philadelphia: Institute of Physics Publishing, 1995, pp. 22
[38]K. N. Tu, J. W. Mayer, and L.C. Feldman, Electronic Thin Film Science, New York: Macmillan Publishing Company, 1992.
[39]秦玉玲,以反應性磁控鍵度沈積氧化亞銅薄膜之結構與光電性質研究,國立成功大學材料科學及工程學系碩士論文,2006年,第13頁。
[40]M. Ohring, The Materials Science of Thin Films, New Jersey: Academic Press, 1992, pp. 197,224
[41]John A. Thornton, “Influence of apparatus geometry and deposition conditions on the structure and topography of thick sputtered coatings”, Journal of Vacuum Science & Technology Archives, Vol. 11, 1974, pp. 666.
[42]Chun-Tsung Su, Hsin-Ten Lee, Bin-Kun Wu, and Ming-Yau Chern, “Development of phase-pure CuAlO2 thin films grown on c-planes apphire substrates prepared by RF sputtering,” Journal of Crystal Growth, Vol. 328, 2011, pp. 25-29.
[43]C.H. Shih , and B.H. Tseng, “Formation mechanism of CuAlO2 prepared by rapid thermal annealing of Al2O3/Cu2O/Sapphire sandwich structure,” Physics Procedia, Vol. 32, 2012, pp. 395-400.
[44]P. Kofstad, Nonstoichiometry, Nonstoichiometry, Diffusion and Electrical Conductivityin Binary Metal Oxides, New York: Wiley-Interscience, 1972, pp. 19.


連結至畢業學校之論文網頁點我開啟連結
註: 此連結為研究生畢業學校所提供,不一定有電子全文可供下載,若連結有誤,請點選上方之〝勘誤回報〞功能,我們會盡快修正,謝謝!
QRCODE
 
 
 
 
 
                                                                                                                                                                                                                                                                                                                                                                                                               
第一頁 上一頁 下一頁 最後一頁 top