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研究生:張展維
研究生(外文):Zhang, Zhanwei
論文名稱:超薄TSV晶圓抗彎矩強度之數值分析
論文名稱(外文):A Numerical Analysis of the Flexural Strength of Thin TSV Wafer Die
指導教授:劉德騏
指導教授(外文):Liu, D. S.
口試委員:陳精一徐祥禎林派臣
口試委員(外文):Chen, C. I.Hsu, HsiangchenLin, Paichen
口試日期:2012-07-12
學位類別:碩士
校院名稱:國立中正大學
系所名稱:機械工程學系暨研究所
學門:工程學門
學類:機械工程學類
論文種類:學術論文
論文出版年:2012
畢業學年度:100
語文別:中文
論文頁數:96
中文關鍵詞:矽穿孔晶片薄板元素無限元素法有限元素法
外文關鍵詞:Through Silicon ViaPlate ElementInfinite Element AnalysisFinite Element Analysis
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近年來晶片趨向輕薄短小、低耗電、低成本與多功能的需求,故晶片在系統中可使用的空間愈來愈小,因此發展三維矽穿孔(Through Silicon Via; TSV)多晶片堆疊封裝(Stacked-Die Packaging; SDP)技術是極重要的封裝發展方向。當晶片數量增加時,必須經由減少晶片厚度來達到既有晶片堆疊的空間,而多晶片封裝若有一顆IC失效,將連帶造成整個IC無法運作,故在封裝第一階段,需應用超薄TSV晶圓之針測技術(Thin TSV Wafer Probing Techniques),即時檢測出不良晶粒。本研究將應用四點彎矩(Four-Point Bending,4PB)模擬超薄TSV晶圓針測時所產生之晶圓強度,此外本研究建立薄板元素(Plate Element)之無限元素(Infinite element)的計算方法,並利用此分析模型結合有限元素法探討不同孔徑大小、厚度對薄晶圓強度之影響。
Light weight, small size, low voltage, and low cost are the mainly request of high performance IC product; on the other hand, it also means the spacing for IC system is very limited. Therefore to develop the Through Silicon Via (TSV) Stacked-Die Packaging (SDP) is the current important direction for advance packaging technique. TSV/SDP need to support with thin wafer so that the stacking dies could maintain the spacing limitation, however any failure die could lead to lower the yield rate and increasing the manufacturing cost. Therefore, a highly needed technique at the first phase of the package is to develop of ultra-thin TSV Wafer Probing Techniques for better detecting of failure dies and improve the yield rate of SDP. In this study we applied four-point bending to analyze the die strength of probing ultra-thin TSV Wafer. We also developed an analytical method, using plate element sets up infinite element Analysis (IEA) model combined with the Finite Analysis(FEA) model to analyze the size and thickness effect of TSV.
表目錄 VII
圖目錄 IX
第一章 緒論 1
1-1 研究動機 1
1-2 研究目的 4
1-3 文獻回顧 5
1-3-1 彎矩試驗對晶圓強度的探討 5
1-3-2 晶圓受熱負載之應力分佈探討 9
1-3-3 文獻回顧總結 15
1-4 研究方法、進行步驟與流程 16
1-4-1 3D與2.5D模擬 17
1-4-2 無限元素法 19
第二章 無限元素法介紹 21
2-1 薄板無限元素法相似形狀元素剛性矩陣之關係 21
2-2 薄板無限元素法之剛性矩陣計算 26
2-3 薄板無限元素法之不同層數剛性矩陣運算推導 29
2-4 薄板無限元素法之每一層位移運算推導 33
第三章 薄晶圓強度測試 35
3-1 薄晶圓強度實驗 35
3-2 3D有限元素模擬 37
3-2-1 邊界設定與材料性質給定 38
3-2-2 3D有限元素模型 38
3-3 2.5D有限元素模擬 39
3-3-1 邊界設定與材料性質給定 39
3-3-2 2.5D有限元素模型 39
3-4 結果與討論 40
第四章 無限元素法分析驗證 43
4-1 薄板無限元素法之範例驗證 43
4-2 無限元素法模擬結果 45
第五章 超薄TSV晶圓強度分析 49
5-1 晶圓之彎矩強度測試 49
5-2 超薄TSV晶圓之模擬尺寸與彎矩值 54
5-3 異質性無限元素法與ABAQUS之驗證 58
5-4 超薄TSV晶圓於不同尺寸下抗彎矩表現 61
第六章 結論與未來研究方向 65
6-1 結果與討論 65
6-2 未來研究發展 66
參考文獻 67


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