臺灣博碩士論文加值系統

本實驗研究透過SiO2摻雜ZnS:Mn2+螢光粉得以實現，螢光粉可以UV光激發出近白光色，此改變傳統利用紅光螢光粉混合藍光螢光粉達成白色發光之製程與需求，並減少製作白色發光螢光粉時之材料使用，螢光粉可於電激發光觀察與應用，實現黃光電激發光元件(Electroluminescence，EL)製作。實驗過程，首先利用溶膠凝膠法合成ZnS:Mn2+膠體，再將ZnS:Mn2+膠體以共沉澱法方式加入二氧化矽於超音波震盪混合均勻，最後以固態燒結法方式於溫度1100℃下熱處理30分鐘，便完成螢光粉合成。SiO2摻雜ZnS:Mn2+螢光粉之晶體顆粒大小是利用電子式掃描顯微鏡觀察；其晶相由粉末繞射分析，得知是由立方晶體與六方晶體組成。由激發光譜量測，知螢光粉之發光係因電子於Mn2+發光中心之4T1 → 6A1遷移與ZnS晶體表面缺陷(Surface Defect)激發所造成。螢光粉之電激發光色度座標是於電激發光元件以100 V (1 kHz)輸入下觀測，另以UV光照射螢光粉體測量其光激發光之特性。螢光粉之最佳發光特性是藉由改變Mn2+摻雜濃度與燒結溫度和時間評估之。

In this study, SiO2 was mixed with ZnS:Mn2+ phosphor, and the phosphor could be excited by UV light to generate near-white light. This could change the traditional process of using mixtures of red and blue fluorescent powders to achieve the production and fulfill the needs of white-light emission. This process can also reduce the number of materials required to produce white light-emitting phosphors. Phosphorscan be utilized in observations and applications involving electroluminescence (EL), as well as in the production of yellow-light EL. In this experiment, the sol-gel method was first used to synthesize a ZnS:Mn2+ colloid, and then, the colloidal was mixed with SiO2 using the co-precipitation method, followed by mixing using ultrasonic waves. Finally, the mixture was treated with solid-state sintering for 30 min at a temperature of 1100ºC to complete the synthesis of fluorescent powder. The crystal size of the phosphor produced by mixing SiO2 with the ZnS:Mn2+ colloid was observed using a scanning electron microscope (SEM); the crystalline phase was subjected to powder diffraction analysis, and it was found to be composed of cubic and hexagonal crystals. Excitation spectroscopy revealed that the light emission in the phosphor was due to the 4T1 → 6A1 transition of electrons from the Mn2+ luminescence center and the excitation of ZnS crystal surface defects. The light chromaticity coordinates of the fluorescent powder EL were observed using electroluminescent devices with 100 V (1 kHz) input; the optical excitation characteristics of the phosphor were then measured under UV light excitation. The optimal luminescence properties of the phosphor were assessed by changing the Mn2+ mixing concentration, sintering temperature, and time.

總目錄
中文摘要 ...........................................................................................V
英文摘要 ……………………………………………...……………VI
目次 ……………………………………………………………VII
圖目錄 …………………………………………………………XII
表目錄 ....................................................................................XVI
一、 緒論………………………………………………………15
1.1 前言……………………………………………………….15
1.2 研究動機………………………………………………….16
二、 螢光粉基礎理論…………………………………………17
2.1 螢光粉發展歷史………………………………………….17
2.2 螢光粉種類……………………………………………….19
2.3 螢光粉製程技術介紹…………………………………….19
三、 螢光粉發光原理…………………………………………22
3.1 原色之簡介……………………………………………….22
3.2 螢光與磷光……………………………………………….22
3.3 螢光粉發光機制………………………………………….22
四、 實驗方法與步驟說明……………………………………25
4.1 實驗設備介紹…………………………………………….25
4.2 實驗材料介紹…………………………………………….27
4.3 EL元件製作流程…………………..………………...27
　　 4.4 ZnS:Mn製作流程………………......………………….29
五、 實驗結果與討論………………………………………....30
　　 5.1 ZnS:Mn燒結溫度成長關係比較………...……............….30
5.1.1 X-ray diffraction(XRD) 粉末繞射儀分析……....30
5.1.2 Scanning electron microscopy (SEM)探討……..30
　　 5.1.3 Photoluminescence (PL)分析…….…….………...31
5.2 ZnS:Mn不同濃度Mn比例分析……...….................…...32
5.2.1 X-ray diffraction(XRD) 粉末繞射儀分...……….32
5.2.2 Scanning electron microscopy (SEM)探討……..33
　　 5.2.3 Photoluminescence (PL)分析...…………………...33
5.2.4 CIE (CIE coordinates)座標UV量測……….…...34
　　　　　5.2.5 CIE (CIE coordinates)座標EL量測探討……….34
5.3 ZnS:Mn燒結溫度比較…………………...........…..……...35
5.3.1 X-ray diffraction(XRD) 粉末繞射儀分析…........35
5.3.2 Scanning electron microscopy (SEM)探討…......35
　　 5.3.3 Photoluminescence (PL)分析………...……...……35
5.3.4 CIE (CIE coordinates)座標UV量測探討……....36
5.3.5 CIE (CIE coordinates)座標EL量測探討……….37
5.4 ZnS:Mn燒結時間長度比較………..………..….......……38
　 5.4.1 X-ray diffraction(XRD) 粉末繞射儀分析……......38
5.4.2 Scanning electron microscopy (SEM)探討.............38
　　 5.4.3 Photoluminescence (PL)分析..................................39
5.4.4 CIE(CIE coordinates)座標UV量測探討.............39
5.4.5 CIE(CIE coordinates)座標EL量測探討..............40

六、 總結...................................................................................41
參考文獻 ...........................................................................................43

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