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研究生:黃瓊慧
研究生(外文):Huang,Chiung-Hui
論文名稱:鉻緩衝層厚度在鈦酸鍶鋇薄膜之介電性質 及機械應力之研究
論文名稱(外文):The studies of dielectric loss and mechanical stress of barium strontium titanate thin films by adding chromium Layer
指導教授:林金雄林金雄引用關係李顯億
指導教授(外文):Lin,Jin-ShyongLee,Shean-Yih
學位類別:碩士
校院名稱:國立勤益科技大學
系所名稱:機械工程系
學門:工程學門
學類:機械工程學類
論文種類:學術論文
論文出版年:2013
畢業學年度:101
語文別:中文
論文頁數:65
中文關鍵詞:射頻磁控濺鍍緩衝層Cr
外文關鍵詞:chromium (Cr)residual stressseeding layerTemperature coefficient of capacitance (TCC)
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本研究以射頻磁控濺鍍法在p型(100)矽基板上沉積鈦酸鍶鋇(Ba0.5Sr0.5TiO3, BST)薄膜,其實驗樣品結構為Al/(Ba0.5Sr0.5)TiO3/ Cr/Pt/Ti/SiO2/Si ,並探討不同厚度之Cr緩衝層中BST薄膜之特性分析。由於未加Cr緩衝層之BST薄膜有較大的表面粗糙度、較差之漏電流、介電損失與熱穩定係數。在BST薄膜基板結構中加入Cr = 2 nm緩衝層其介電損失、漏電流、熱穩定度、揚氏係數、殘留應力比BST薄膜未加入Cr緩衝層分別改善約59%, 1 個數量級在 +62.5 kV/cm (+1 V), 35 %, 41 %, 和 28 %。

The effects of the thickness of the Cr seeding layer of Ba0.5Sr0.5TiO3 (BST) thin films grown on Pt/TiN/SiO2/Si substrates on crystallographic structure, surface morphology, dielectric loss, leakage current, and mechanical stress were investigated. Adding a Cr seeding layer to the interface between BST/Pt structures has a strong influence on BST film properties including dielectric loss, leakage current, the temperature coefficient of capacitance (TCC), and mechanical properties, as well as films grain sizes. BST films with a 2 nm Cr seeding layer showed grains that were denser, smoother, and smaller in size than those in specimens with the Cr seeding layer thickness = 0, 1, and 3 nm. The dielectric loss, leakage current density, thermal stability (TCC), Young’s modulus, and residual stress of BST films with a 2 nm Cr seeding layer are improved by about 59%, 1 order of magnitude at +62.5 kV/cm (at +1 V), 35 %, 41 %, and 28 %, respectively, compared with BST films without a Cr seeding layer. The mechanical stress of BST films had a significant effect on both microstructure and dielectric properties. It was observed that the residual stress of the BST/Pt interface was effectively reduced by adding a Cr seeding layer. The correlations of material properties with dielectric loss, leakage current, thermal stability, and residual stress properties suggest that adding a 2 nm Cr seeding layer to BST films is the optimal choice for metal-insulator-metal (MIM) device applications.

目錄
頁次
摘要..................................................IV
Abstract...............................................V
目錄................................................VIII
圖目錄.................................................X
第一章序論............................................12
1-1 前言……………………………………………………………12
1-2 研究背景與目的………………………………………………16
第二章文獻回顧........................................17
2-1 DRAM的發展現況....................................17
2-2記憶元件的介紹.....................................18
2-3 製程技術的改善....................................19
2-4 高介電材料之開發..................................23
2-5 薄膜成核成長理論…................................26
2-6鈦酸鍶鋇薄膜性質...................................28
2-7電漿處理(plasma treatment)之研究...................29
2-8 介電材料極化機制……………………………………………30
2-9 鐵電材料相變化機制…………………………………………35
2-10 鈦酸鍶鋇鐵電材料相變化機制.......................35
2-11 薄膜應用於微波通訊中.............................39
第三章實驗方法與步驟……………………………………………40
3-1 MIM 電容結構製作簡介..............................40
3-2實驗流程...........................................41
3-3化學清洗...........................................42
3-4高溫成長二氧化矽層.................................42
3-5附著層電極及下電極的成長...........................43
3-6成長薄膜前的化學清洗...............................43
3-7成長高介電薄膜.....................................43
3-8熱退火處理.........................................44
3-9成長上電極.........................................44
3-10 實驗設備.........................................45
3-11電性量測..........................................51
3-11-1 I-V 量測 (Leakage Current V.S. Voltage)........51
3-11-2 C-V 量測 (Capacitance V.S. Voltage)............51
第四章實驗結果與討論..................................53
4-1 XRD分析...........................................53
4-2 AFM 分析..........................................54
4-3 I-V特性...........................................55
4-4 C-V特性...........................................55
4-5熱穩定度特性.......................................56
4-6機械應力特性.......................................58
4-7楊氏系數特性.......................................59
第五章結論............................................60
參考文獻..............................................61

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