臺灣博碩士論文加值系統

我們研究的主要目的是為了設計並製作出高速、高調變深度、低功率消耗的光波導調變器和光波導開關元件。在我們光波導調變器的研究當中，我們從一開始結構較為簡單的元件開始，陸續做各種不同的結構改變和嘗試，期望可以朝我們研究的目標更靠近，所以我們總共設計了五個不同的矽光波導調變器結構，在我們的第一個元件中，我們成功地利用折射率調變的方式在SOI基板製作出一個p+–p ––n + (p–i–n) 二極體結構的光波導調變器。其中調變深度會被光波導的寬度、p+和n+掺雜濃度、驅動電流大小所控制。而我們利用SOD的技術製作p+和n+的掺雜區域取代傳統利用離子佈植技術所製作的元件，最大調變深度在元件長度為7mm並且順偏電流為5mA/mm的條件下可以達到~4.15%。
在第二個元件中我們製作出一個三端電晶體結構的直線型光波導調變器，我們詳細地比較研究了光波導元件尺寸和所施加的固定偏壓對光調變深度的影響。根據我們的量測結果顯示，當元件的光波導寬度增加和元件調變區長度增加的情況對於調變深度的改善有正面的幫助。另一方面藉由外加額外的Vgs偏壓也可以幫助降低元件ON/OFF切換的上升和下降時間。另外增加溝渠結構在靠近屋脊式光波導結構的兩側的設計會導致載子傳輸的距離增加，反而會讓元件操作的速度降低。
在第三個元件中，我們設計並製作分析一個利用兩個多模干涉儀組成面積只有6000 × 40 μm2的Mach-Zenhder干涉儀光波導調變器， 元件的調變機制是利用自由載子注入效應，並且此結構利用BPM模擬的消光率約18.3dB，在元件的量測過程中達到第一次π相位差的電功率消耗約0.2W，另外在光響應速度的量測結果中，MMI-MZIs在三個調變長度460, 960, 1960μm的上升 / 下降時間分別為56/84, 52/84 and 76/88 ns，最後此元件的3dB頻率響應量測結果為大於6MHz。
在第四個元件中，我們設計和製作一種新式的三端電晶體結構的Mach­Zehnder 干涉儀光調變器在SOS基板。我們提出此一新式電晶體結構的等效電路以便更容易了解其動作原理和元件特性。雖然此元件的消光率可達到25dB，但我們的實驗結果同時也顯示此結構的元件需要消耗約0.75W的電功率才能達到一次 π相位移變化，並且響應特性量測結果顯示， 此元件的上升和下降時間分別為8.5μs 和7.5μs。此元件三個不同調變長度的3dB頻率響應都約為400kHz。並且我們經由實驗驗證此元件的響應特性主要被響應速度較低的熱光效應所主導。
在第五個元件中，我們使用double injection field effect transistor (DIFET) 架構的電晶體和Mach-Zenhder干涉儀整合，並將其製作、量測與分析特性。根據所量測到的結果顯示此元件的消光率為17dB，在元件的量測過程中達到第一次π相位差的電功率消耗約0.2W。而光響應速度的量測結果顯示，三種不同調變長度元件500μm, 1000μm和2000μm的上升和下降時間分別為44/60 ns、48/64 ns和50/54 ns。而此結構的元件在三端電晶體的操作模式中所量到的3dB頻率響應約為10.5 MHz。
在光波導開關的研究當中，我們成功的設計和製作出一個利用串接式多模干涉儀所組合成的2 × 2 SiO2 /SiON/SiO2 光波導開關元件，並且利用SiON薄膜的熱光效應做為此元件的調變機制，並且此元件的FD-BPM模擬結果和實際的量測結果相似，兩者之間只有一微小的差異在於實際SION薄膜的熱光係數和模擬當中所使用的參數不見的相同，並且在模擬過程中所使用的SION薄膜的熱光係數是假設為一個固定的常數。 我們的量測結果顯示此元件的光訊號切換特性達到最大時所需消耗的電功率約為0.89W，並且最大的訊號切換對比為12dB。而頻率響應的量測結果當中，元件的上升和下降時間都約為314μs。

The main purpose of our research is that we want to fabricate the high operating speed, high modulation depth and low operating power consumption silicon optical waveguide modulator and optical switch. In the field of our silicon optical waveguide modulators, we start this research from a simply structure device, and then we try to change the device structure in order to improve the device characteristic in following devices. We had designed and fabricated five different silicon optical waveguide modulator structures. In our first device structure, we have successfully demonstrated silicon p+–p––n+ (p–i–n) waveguide modulators fabricated on SOI substrates utilizing the index modulation technique. The efficiency of the modulator depends critically on the core width, available dopant concentrations of both p+ and n+ doped regions, and driving current. By using the spin-on-dopant technique, both p- and n- regions can be conveniently defined without the need of relying on cumbersome implantation procedure. The highest modulation depth achieved was ~4.15% for a 7-mm-long device operating at a forward bias current density of 5 mA/mm.
In our second device structure, we have successfully demonstrated a working silicon three-terminal transistor-based waveguide modulator; most of all, the dependencies of the modulation depth on the relative device dimensions and applied biasing signals of different frequencies were studied in full detail. Based on our results, the enhancements in the modulation depth of the devices were clearly observed as their rib waveguide widths or modulation lengths became respectively wider or longer. Furthermore, incorporating a third terminal with different applied VGS’s did help to reduce the rise and fall times of the modulators. Finally, adding trenches close to the edges of the rib inevitably impeded the carriers flow, thereby limiting the efficiency of carrier depletion or accumulation during the actual device operation.
In our third device structure, the design of MMI-MZI modulators with dimensions of 6000 × 40 μm was proposed, fabricated and analyzed. The operation of these devices was based on the carrier injection effect, from which an approximate extinction ratio of 28.3 dB was obtained using BPM simulation. As for the device measurements, when the driving power was set at 0.2 W, the first π phase shift was observed. Finally, the optical response measurements indicated that the rise/fall times determined for MMI-MZIs with the three different MLs of 460, 960 and 1960 μm were 56/84, 52/84 and 76/88 ns, respectively. Finally, the 3-dB roll-off frequency ( f3dB ) of greater than 6 MHz was also determined via the frequency response measurement.
In our fourth device structure, A new three-termina1 transistor is proposed as a modulation structure for Mach­Zehnder interferometric optical modulators fabricated on SOS (silicon-on-silicon) substrates. The concept of the equivalent circuits was used to better understand the performance of these three­terminal devices. Our experimental results showed that an approximately 0.75 W (or 50mA IS current) of Switching power is needed to initiate the first π phase shift and With this input power applied, an excess of 25 dB extinction ratio is achieved. Furthermore, the optical response measurements obtained earlier also indicated that the rise and fall times measured from these device are in the neighborhood of 8.5 and 7.5μs, respectively. Finally, the 3dB roll-off frequency (f3dB) was also measured with values in the excess of 400kHz for the modulators with the phase Shifters of three different lengths. The insensitivities of the devices temporal and frequency responses toward the phase shifter length are in fact predominantly attributed to the slow thermo-optic effects.
In our fifth device structure, the design of the double injection field effect transistor (DIFET) based MZI modulators with three different phase shifter lengths was proposed, fabricated, and analyzed. According to the experimental results obtained, the highest extinction ratio achieved was in the excess of 17 dB. Furthermore, the optical response measurements indicated that the rise/fall times determined for MZIs with the three different modulation lengths of 500, 1000 and 2000 μm were 44/60 ns, 48/64 ns, and 50/54 ns, respectively. Finally, the 3dB roll-off frequency (f3dB) of more than 10.5 MHz was also determined via the frequency response measurement.
We have successfully designed and fabricated a cascaded MMI-based 2 × 2 SiO2 /SiON/SiO2 optical waveguide switch utilizing the thermo-optic effect. Our FD-BPM simulation and subsequent device characterization results matched rather well with one another. The minor discrepancy between the simulation and experimentation data appeared to be due to a slightly changing thermo-optic coefficient of SiON film during the actual device operation, whereas a constant TO coefficient of SiON was assumed instead in carrying out the simulation. Our experimental results have demonstrated that a minimal heating power of ~0.89 W is required to start the optical switching with the highest extinction coefficient of higher than 12 dB. Finally, the dynamic response measurement conducted on our devices clearly indicates the rise and fall times thereby obtained are around 314 μs.

Contents
摘要 I
Abstract IV
Acknowledgements VIII
Contents X
Table Contents XV
Figure Contents XVI
Chapter 1 Introduction 1
1.1 Introduction 2
1.1.1 Optical Waveguide Modulators 4
1.1.2 Optical Waveguide Switch 11
1.2 Overview of This Dissertation 13
References 17
Chapter 2 Silicon Integrated Optical Waveguide Modulators in Silicon-on-Insulator (SOI) Substrate Based on the p-i-n Waveguide Structure 23
2.1 Introduction 24
2.2 Refractive Index Change Mechanism of Silicon 26
2.2.1 Electric-Field Effect 27
2.2.2 Carrier Injection Effect 30
2.2.3 Heat Effect 32
2.3 Fabrication Procedures of p-i-n Waveguide Structure 32
2.3.1 Fabrication process 32
2.3.2 SRP Study of SOD-Doped SOI Substrates with Different Resistivities 34
2.4 Modulation Measurements 38
2.5 Summary 44
References 45
Chapter 3 Silicon Integrated Optical Waveguide Modulator in Silicon-on-Silicon (SOS) Substrate Based on the JFET Device Structure 47
3.1 Introduction 48
3.2 Device Structure Design and Principle 51
3.3 Fabrication Procedures of JFET Device Structure 53
3.4 Measurement Results and Discussion 55
3.5 Summary 66
References 67
Chapter 4 Silicon Integrated Optical Waveguide Modulator in Silicon-on-Insulator (SOI) Substrate Based on the p-i-n Diode Structure with Multimode Interference Couplers-Based Mach-Zehnder Interferometric 69
4.1 Introduction 70
4.2 Device Structure of the Multimode Interference Couplers-Based Mach-Zehnder Interferometric Optical Modulator 72
4.3 Fabrication Procedures of the Multimode Interference Couplers-Based Mach-Zehnder Interferometric Optical Modulator 75
4.4 Measurement Results and Discussion 78
4.5 Summary 89
References 90
Chapter 5 Silicon Integrated Optical Waveguide Modulator in Silicon-on-Silicon (SOS) Substrate Based on the Integrated Double Diode Transistor (DDT) Structure 93
5.1 Introduction 94
5.2 Double Diode Transistor (DDT) Device Structure Design and Principle 96
5.3 Fabrication Procedures of the Double Diode Transistor (DDT) Device Structure 99
5.4 Measurement Results and Discussion 103
5.5 Summary 117
References 119
Chapter 6 Silicon Integrated Optical Waveguide Modulator in Silicon-on-Insulator (SOI) Substrate Based on the p+-n+-n+ Double-Injection Field Effect Transistor (DIFET) Structure 121
6.1 Introduction 122
6.2 Double-Injection Field Effect Transistor (DIFET) Device Structure Design and Principle 124
6.3 Fabrication Procedures of Double-Injection Field Effect Transistor (DIFET) Device Structure 137
6.4 Measurement Results and Discussion 141
6.5 Summary 146
References 148
Chapter 7 Silicon Integrated Thermo-Optical Waveguide Switch in SiO2 /SiON/ SiO2 Structure Based on the Multimode Interference Effect 150
7.1 Introduction 151
7.2 Cascaded Multimode Interference Waveguides Structure 153
7.3 Device Design and Fabrication 157
7.4 Characterizations of Optical Power Steering 163
7.5 Summary 168
References 169
Chapter 8 Conclusions and Future Prospects 171
8.1 Conclusion 172
8.2 Future Prospects 175
References 188
Publication list 189
Vita 194

Chapter 1
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Chapter 2
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Chapter 3
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Chapter 4
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Chapter 8
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