|
1. T. Dobbertin, M. Kroeger, D. Heithecker, D. Schneider, D. Metzdorf, H. Neuner, E. Becker, H.-H. Johannes, and W. Kowalsky, Appl. Phys. Lett. 82, 284 (2003). 2. G. Horowitz, J. Mat. Res. 19, 1946 (2004). 3. Li, G., V. Shrotriya, J. Huang, Y. Yao, T. Moriarty, K. Emery, and Y. Yang, Nat Mater, 4,11(2005). 4. C.H.Hung, “Introduction And Application of Flexible Substrates ”,工研院材化所技術專題. 5. Photo from SONY, http://www.sony.net/SonyInfo/News/Press/201005/10-070E 6. Photo adapted from http://www.geekosystem.com/flexible-e-ink-displays/ 7. H. Klauk, M. Halik, U. Zschieschang, F. Eder, G. Schmid, and C. Dehm, Appl. Phys. Lett. 82, 23(2003). 8. F. Ebisawa, T. Kurokawa, and S. Nara, J. Appl. Phys. 54, 3255 (1983). 9. A. Assadi, C. Svensson, M. Willander, and O. Inganas, Appl. Phys. Lett. 53, 195 (1988). 10. G. Horowitz, X. Z. Peng, D. Fichou, and F. Garnier, Syn. Met. 51, 419 (1992). 11. Oana D. Jurchescu, Mihaita Popinciuc, Bart J. van Wees, and Thomas T. M. Palstra, Adv. Mater. 19, 688-692(2007). 12. R. Hajlaoui, G. Horowitz, F. Garnier, A. Arce-Brouchet, L. Laigre, A. Elkassmi, F. Demanze, F. Kouki, Adv. Mater. 9, 389 (1997). 13. J. H. Schn, C. Kloc, B. Batlogg, Org. Electron. 1, 57 (2000).
14. G. Horowitz, X. Z. Peng, D. Fichou, and F. Garnier, Syn. Met. 51,419 (1992). 15. D. J. Gundlach, K. P. Pernstich, G. Wilckens, M. Gruter, S. Haas, and B. Batlogg, Proc. Of SPIE 5049 16. F. Ebisawa, T. Kurokawa, S. Nara, J. Appl. Phys Lett. 54, 3255 (1983). 17. J. H. Burroughes, C. A. Jones, R. H. Friend, Nature, 335, 137 (1988). 18. Yong-Young Noh, Henning Sirringhaus, Org. Electr. 10,174-180 (2009). 19. S. Holdscroft, Adv. Mater. 13, 1753(2001). 20. S. C. Chang, Y. Bharathan, Y. Yang, R. Helgeson, F. Wudl, M. B. Ramey, and J. R. Reynolds, Appl. Phys. Lett. 73, 2561 (1998). 21. T. R. Hebner, C. C. Wu, D. Marcy, M. H. Lu, and J. C. Strum, Appl. Phys. Lett.72, 519 (1998). 22. J.A. DeFranco, B.S. Schmidt, M. Lipson, G.G. Malliaras ,Org. Electr. 7 ,22(2006). 23. S.H. Han, J.H. Kim, J. Jang, S.M. Cho, M.H. Oh, S.H. Lee,D.J. Choo, Appl. Phys. Lett. 88, 073519 (2006). 24. F.M. Li, Y. Vygranenko, S. Koul, A. Nathan, J. Vac. Sci.Technol. A 24 (3), 657 (2006). 25. F. J. Touwslager, N. P. Willard, and D. M. de Leeuw, Appl. Phys. Lett. 81,4556( 2002). 26. D.G. Lidzey, M. Voigt, C. Giebeler, A. Buckley, J. Wright, K. Bohlen, J. Fieret, R. Allott, Org. Electr. 6 (2005) 221. 27. Wong, W. S. et al., Appl. Phys Lett. 89, (14), 142118(2006).
28. C.Balocco, L.A. Majewski, A. M. Song, Org. Electr. 7, 500-507(2006). 29. Anusit Keawprajak, Phimwipha Piyakulawat, Phansak Iamraksa, Udom Asawapirom, Journal of the microscopy society of Thailand. 24(2), 89-93(2010). 30. Steven K. Volkman, Steven Molesa, Brian Mattis, Paul C. Chang, and Vivek Subramanian, Mat. Res. Soc. 769 (2003). 31. C. Reese, Mark Roberts, Mang-mang Ling, Zhenan Bao, materials today. 7,9,20-27(2004). 32. Photo from http://large.stanford.edu/courses/2010/ph240/bruner2/ 33. Morrison and Bodym, Organic Chemistry, sixth edition, 502(1992) 34. Eduard Meijer, Charge transport in disordered organic field-effect transistors, Chapter 1(2003) 35. P. G. Le comber and W. E. Spear, Phys. Rev. Lett.,25,509-511(1970) 36. 施敏,伍國玨.半導體元件物理學,(2008) 37. Photo from http://www.purdue.edu/rem/rs/sem.htm
|