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研究生:蕭力函
研究生(外文):Li-Han Hsiao
論文名稱:氧化鋅磊晶膜之熱退火特性分析與電晶體製作
論文名稱(外文):Characterization of Annealed ZnO Films and Fabrication on Thin-Film Transistors
指導教授:綦振瀛
指導教授(外文):Jen-Inn Chyi
學位類別:碩士
校院名稱:國立中央大學
系所名稱:電機工程學系
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2013
畢業學年度:101
語文別:中文
論文頁數:74
中文關鍵詞:氧化鋅電晶體熱退火缺陷光激發光譜
外文關鍵詞:ZnOtransistorannealingdefectphotoluminescence
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在未來顯示器尺寸與解析度不斷提高的趨勢下,氧化鋅相關薄膜電晶體是目前最具潛力取代非晶矽與低溫多晶矽為主的電晶體,主要原因在於氧化鋅電晶體具有較高的載子遷移率(>10 cm2/ V∙s)、對可見光較不敏感、以及可與目前薄膜電晶體製程上的匹配性。
為了製備高載子遷移率的氧化鋅薄膜,文中首先探討氧化鋅與鎵摻雜氧化鋅在氧氣或氮氣中以不同熱退火溫度處理的結果,並以其結構、電性與光學上的變化,探討氧化鋅中缺陷的產生與抑制,最終歸納出一個最佳的熱退火溫度與環境。
利用上述成果,我們利用該氧化鋅製作一金屬-絕緣層-半導體電晶體(MIS-FET),同時討論不同絕緣層結構之電晶體的元件特性。最佳的元件特性其最大開啟電流密度(IOn)可達到33 mA/mm,同時維持開關比(IOn/IOff ratio)達到108,次臨界斜率(sub-threshold slope, SS)為150mV/decade,經過計算,等效的通道載子遷移率可達35.2 cm2/ V∙s,元件在關閉的情況下,崩潰電壓可達125V。元件特性顯示,經過熱退火後的氧化鋅電晶體具有應用的潛力。

In the future, when the size and resolution of displays continuously increase, ZnO-based thin film transistor (TFT) is one of the potential replacement for amorphous-Si and low temperature poly-Si TFTs based on its higher mobility (>10 cm2/ V∙s), less light sensitive and compatible fabrication process.
To achieve a high mobility ZnO film, the properties of annealed ZnO and Ga-doped ZnO in oxygen or nitrogen ambient were investigated. Structural, electrical and optical properties were summarized to explain the generation-annihilation of defects. In the end, an optimal annealing temperature and environment were proposed.
According to the results mentioned above, a ZnO-based metal-insulator-semiconductor TFT was fabricated. Besides, different insulators were also introduced in these TFTs. A high On-state current density of 33 mA/mm and IOn/IOff ratio over 108 were simultaneously obtained. The sub-threshold swing was 150mV/decade. The effective channel mobility is near 35.2 cm2/ V∙s extracted from the formula. These results indicate that annealed ZnO materials have promising characteristics to apply to TFTs.

摘要 I
Abstract II
誌謝 III
目錄 IV
圖目錄 VI
表目錄 VIII
第一章 緒論 1
1-1 前言 1
1-2 文獻回顧 4
1-3 研究動機與方法 5
1-4 論文架構 6
第二章 實驗設備與原理 7
2-1 分子束磊晶系統簡介 7
2-2 量測儀器簡介 8
2-2-1 X光繞射儀 8
2-2-2 霍爾量測系統 9
2-2-3 光激發螢光光譜量測系統 11
2-2-4 化學分析電子儀 12
第三章 氧化鋅磊晶膜之熱退火特性分析 13
3-1 前言 13
3-2 熱退火實驗設計 13
3-3 氧化鋅結構分析 14
3-4 氧化鋅電氣特性分析 18
3-5 氧化鋅光譜分析 23
3-6 氧化鋅化學分析 30
3-7 本章結論 33
第四章 氧化鋅電晶體製作及電性分析 34
4-1 前言 34
4-2 氧化鋅試片製備 34
4-3 氧化鋅電晶體製作流程 36
4-4 元件特性分析與討論 40
4-5 本章結論 52
第五章 結論 53
參考文獻 55



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