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研究生:賴昱辰
研究生(外文):Yu-Chen Lai
論文名稱:氧化鉍奈米線合成鑑定及光觸媒應用
論文名稱(外文):Synthesis and Characterization of Bismuth Oxide Nanowires for Photocatalyst
指導教授:田禮嘉
指導教授(外文):Li-Chia Tien
學位類別:碩士
校院名稱:國立東華大學
系所名稱:材料科學與工程學系
學門:工程學門
學類:材料工程學類
論文種類:學術論文
論文出版年:2013
畢業學年度:101
論文頁數:101
中文關鍵詞:氧化鉍奈米線光致激發光譜光觸媒
外文關鍵詞:bismuth oxidenanowiresphotoluminescencephotocatalyst
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本研究利用物理氣相傳輸法,以鉍金屬為蒸汽來源,在反應中通入氬氣並控制氧氣分量,於具金觸媒的矽(001)基板及藍寶石(0001)基板上,成功合成出氧化鉍(α-Bi2O3)奈米線。並藉由X光繞射分析儀(XRD)、場發射掃描式電子顯微鏡(FE-SEM)、能量散佈光譜儀(EDS)、X光光電子能譜儀(XPS)、穿透式電子顯微鏡(TEM)、紫外光/可見光(UV/visible)光譜儀、光致激發光光譜儀(PL)等儀器,分別對樣品進行表面形貌、晶體結構成分與光學性質分析,最後利用若丹明(Rhodamine B)水溶液及亞甲基藍(Methylene blue)水溶液對氧化鉍(α-Bi2O3)奈米線作可見光光觸媒性質分析。由分析結果得知,所成長的氧化鉍(α-Bi2O3)奈米線直徑約為200 -500 nm,長度約為10 -20 μm,晶體結構為單斜晶(monoclinic)結構,推測其成長機制為氣液固(VLS)成長機制與氣固(VS)成長機制所組成;在光學性質分析方面,經由紫外光/可見光(UV/visible)光譜儀量測出氧化鉍(α-Bi2O3)奈米線的能隙大約位於2.86 eV,另外由室溫光致激發光光譜顯示,氧化鉍(α-Bi2O3)奈米線於He-Cd雷射(325 nm)激發下,在橘紅波段產生強激發光峰,其位置位於524 nm,由低溫光致激發光光譜顯示,氧化鉍(α-Bi2O3)奈米線於He-Cd雷射(325 nm)激發下,會在藍綠波段與紫外光波段產生三個激發光峰,其位置位於649 nm、438 nm與419 nm,結果顯示氧化鉍奈米線具有良好發光特性。另一方面,由光觸媒分析得知,氧化鉍(α-Bi2O3)奈米線較氧化鉍(α-Bi2O3)陶瓷粉末有更優越的可見光光觸媒性質,顯示氧化鉍(α-Bi2O3)奈米線可應用於可見光光觸媒。
A vapor transport process has been used to synthesize bismuth oxide nanowires.In the process , bismuth metal was used as source material , Ar and O2 were used as carrier gases with contrlled O2/Ar ratio. We have successfully synthesized one-dimensional bismuth oxide nanostructures (α-Bi2O3) on both silicon (001) and sapphire (0001) substrates by a simple vapor transport method. The morphologies, crystal structures, chemical compositons, and optical properties of the as-synthesized α-Bi2O3 nanostructures were characterized by using X-ray diffraction (XRD) , field emission scanning electron microscope (FE-SEM) , ransmission electron microscope (TEM) , UV/Visble absorption spectroscopy (UV/Visble) and photoluminescence(PL) techniques. The visible light photocatalytic activity were characterized by mointoring the degradation of rhodamine B and methylene blue solution.The results clearly show that the as-synthesized nanowires are monoclinic structure with diameter ranging from 200 to 500 nm and length of 10 to 20 μm. The results confirm that the formation of these nanowires is driven by both VLS and VS growth mechanism. The optical property of bismuth oxide nanowires were characterized by UV/Visble and PL at room temperature.The band gap of α-Bi2O3 nanowires was estimated to be 2.86 eV by UV/Visble absorption measurement . An interse Orange-red emission was observed at 524 nm. Moreover, three intense defect-related emission were observed at 649 nm, 434 nm , and 419 nm , respectively at low temperature. The results show that α-Bi2O3 nanowires are with supreior luminescence property. On the other hand ,compared with α-Bi2O3 powder, the α-Bi2O3 nanowires show higher photocatalytic activity. The results show that α-Bi2O3 nanowires may be used for photocatalyst under visible light.
中文摘要 I
英文摘要 II
目 錄 III
圖目錄 VI
表目錄 XII
第一章、緒論 1
1.1研究背景 1
1.2研究動機與目標 2
第二章、理論基礎與文獻回顧 3
2.1.氧化鉍的基礎性質與應用 3
2.2.氧化鉍(α-Bi2O3)的發光性質 4
2.3.氧化鉍(α-Bi2O3)的光觸媒性質 4
2.4一維氧化鉍(α-Bi2O3)奈米結構的成長機制 5
2.4.1氣相-液相-固相成長機制(VLS Growth Mechanism) 5
2.4.1.1原理介紹 5
2.4.1.2實際應用 5
2.4.2氣相-固相成長機制(VS Growth Mechanism) 6
2.4.2.1原理介紹 6
2.4.2.2實際應用 7
2.4.3自催化的氣相-液相-固相成長機制 7
2.4.3.1原理介紹 7
2.4.3.2實際應用 9
第三章、實驗規劃與分析儀器 15
3.1實驗目標與流程 15
3.2實驗材料 15
3.3實驗步驟與操作系統 16
3.3.1試片前處理 16
3.3.2鍍金 16
3.3.3高溫退火 16
3.3.4高溫管型爐氣相傳輸系統 17
3.3.5實驗步驟 18
3.4實驗參數 19
3.5水接觸角實驗 20
3.6光觸媒性質實驗 21
3.7分析儀器 22
3.7.1離子鍍金機 22
3.7.2 X光繞射儀 23
3.7.3場發射型掃描式電子顯微鏡 23
3.7.4能量分散式光譜儀 24
3.7.5穿透式電子顯微鏡 24
3.7.6紫外光/可見光吸收光譜儀 25
3.7.7光激發光光譜儀 25
3.7.8 X射線光電子能譜儀 26
第四章、結果與討論 39
4.1改變實驗參數對氧化鉍奈米結構表面形貌的影響 39
4.1.1改變蒸氣源溫度的效應 39
4.1.2改變成長壓力的效應 40
4.1.3改變成長基板的效應 41
4.1.4基板鍍金與未鍍金對氧化鉍奈米結構表面形貌的影響 42
4.1.5改變成長溫度的效應 44
4.1.6改變氧分量的效應 46
4.2顯微結構與表面分析 48
4.2.1 X光繞射儀(XRD)分析 49
4.2.2穿透式電子顯微鏡(TEM)分析 49
4.2.3 X射線光電子能譜儀(XPS)分析 50
4.3氧化鉍(α-Bi2O3)奈米線成長機制之驗證 52
4.3.1表面形貌觀察與能量散佈光譜儀(EDS)分析 53
4.3.2穿透式電子顯微鏡(TEM)分析 54
4.3.3氧化鉍(α-Bi2O3)奈米線的自催化成長機制 56
4.4光學性質分析 57
4.4.1紫外光/可見光光譜儀(UV/vis)分析 57
4.4.2光激發光光譜儀(PL)分析 57
4.5光觸媒性質分析 61
4.5.1紫外光光觸媒性質分析 61
4.5.2可見光光觸媒性質分析 62
第五章、結論 74
第六章、參考文獻 74
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