臺灣博碩士論文加值系統

本研究利用真空熱氧法生長薄膜太陽能電池主吸收層-氧化亞銅。以真空腔體通入氧氣對其中置於加熱器上之銅箔進行氧化，經由改變不同氧化溫度及通入氧氣流量的比例來得到不同性質表現之氧化亞銅薄膜。在材質結構方面，我們以低銳角進行X光繞射(XRD)分析，在氧化溫度處於800℃之薄膜可得到單一Cu2O (111)晶格方向。以場發射掃描式電子顯微鏡(FE-SEM)觀察薄膜表面形貌可得氧化溫度800℃/hr薄膜結晶尺寸達到10µm等級而且有良好晶界；在光學與電性方面，我們以紫外光-可見光光譜儀量測氧化亞銅吸收波段，藉以計算氧化亞銅薄膜能隙大小可得氧化溫度600℃~800℃生長薄膜的能隙大小約為2.0eV；以四點探針進行薄膜阻值分析可得氧化亞銅薄膜電阻率為105 Ω-cm；以Hall量測(Hall measurement)來量測薄膜載子漂移率氧化亞銅薄膜載子漂移率最高可達130 cm2/Vs。
本研究之太陽能電池窗口層(Window-layer)是利用射頻磁式濺鍍生長氧化鋅薄膜，以改變不同氧分壓以及濺鍍功率來得到不同性質表現之氧化鋅薄膜。從X光繞射分析可得在濺射功率40W下通以O2:80%流量所得之氧化鋅薄膜為非晶相；氧化鋅薄膜以MIS結構進行CV、IV所得結果顯示此沈積參數之氧化鋅薄膜之品質(4.5x10-8 A/cm2 at 1MV/cm)較其他沈積參數為佳，非常適合當氧化亞銅薄膜太陽能電池的窗口層。

In this study, the main absorption layer-Cu2O of thin film solar cells was prepared by vacuum oxidation. By changing the temperatures and oxygen partial pressure during oxidation, we obtain Cu2O thin films with different properties. The structures of Cu2O thin films were characterized by glancing incident angle X-ray diffraction (XRD). Clear crystal orientation at Cu2O (111) plane was observed at 800℃oxidation. The surface morphology of the thin films are observed by field emitter-scanning electron microscope, and then the grain size of the thin film (800℃) is around 10µm. The optical and electrical properties of Cu2O thin films were measured by UV-VIS spectrophotometer, four-point probe system and Hall measurement. The band gap and resistivity of the thin films were about 2.0eV and 105 Ω-cm, respectively. The mobility of the thin films as high as 130 cm2/Vs was obtained.
The window-layer of the solar cells prepared by RF reactive magnetron sputtering using a ZnO target was studied. By changing the oxygen partial pressures and sputtering powers, we obtained the zinc oxide thin films with the different properties. The amorphous thin films at 40W and 80% oxygen partial pressures are characterized by XRD. Leakage current density of the films as low as 4.48x10-8 A/cm2 at 1MV/cm was obtained. Finally, the ZnO-Cu2O thin film solar cells were fabricated and measured.

目錄
第一章導論 1
1.1 前言 1
1.2 研究目的與動機 5
1.3太陽能電池分類與發展現況 6
1.4 氧化銅與氧化亞銅太陽能電池發展現況 9
第二章 理論基礎與文獻回顧 11
2.1 氧化亞銅晶格結構特性 11
2.2 物理氣相沉積 13
2.3 濺鍍法 15
2.4 射頻反應式磁控濺鍍 21
2.5 真空熱氧法 23
第三章 實驗方法與儀器介紹 25
3.1 實驗流程規劃 25
3.2 氧化亞銅薄膜製程 27
3.3 氧化鋅薄膜製備 29
3.4 薄膜量測儀器介紹 31
3.4-1表面輪廓儀(Surface Profiler) 31
3.4-2四點探針(four-point probe system) 32
3.4-3 場發射型掃描式電子顯微鏡 (Field Emitter-Scanning Electron Microscope) 33
3.4-4 雙晶薄膜X光繞射儀 (X-ray diffractometer, XRD) 35
3.4-5紫外光-可見光光譜(Ultraviolet/Visible Spectrophotometer) 39
3.4-6 霍爾效應分析儀 (Hall Effect Analyzer) 41
3. 4-7半導體元件分析儀 (Semiconductor Device Parameter Analyzer ) 44
3.4-8 太陽模擬光量測系統 (Solar simulator) 45
第四章 量測與分析 46
4.1氧流量對氧化鋅薄膜特性之影響 46
4.2 濺鍍功率對氧化鋅薄膜特性之影響 53
4.3 氧化溫度對氧化亞銅薄膜特性之影響 54
第五章 結論 62

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