臺灣博碩士論文加值系統

本研究中，我們以磁控式射頻濺鍍機(RF Sputter)來製作氧化銅及氧化亞銅薄膜，首先以純銅(99.99%)靶材進行濺鍍，並在腔體中通入氧氣及氬氣，分析銅在氧氣比例的不同之下對我們所形成的薄膜在光性、電性、表面結構上所造成的影響。
實驗發現在氧氣比例20%以上時為單一晶相的氧化銅薄膜，且此後20%~80%的氧氣比所製作出來的薄膜在各種特性下的表現均不會造成太大的變化；在10%及12%低氧氣比例下可以發現薄膜成分為多晶(Cu2O and CuO)；當氧氣比例為8%時，實驗結果為單一晶相的氧化亞銅薄膜，電阻率達6x102 Ω-cm。

In this study, copper oxide (I)(II) thin film is prepared by magnetron RF sputtering. The effect of oxygen ratio and RF power during sputtering on the optical, electrical, and surface characteristics of the copper oxide film was discussed. Single phase CuO was formed when the oxygen ratio was up to 20%. Mixed phase cupper oxides including CuO and Cu2O were formed under the condition of oxygen ratio lower than 10% and 12%.Under the condition of 8% oxygen ratio, single phase Cu2O was formed with resistivity of 6x102 Ω–cm and band gap of 2.1eV.

中文論文審定書 i
英文論文審定書 ii
致謝……………………………………………………………………………………iii
摘要...........................................................................................................................iv
Abstract……………………………………………………………………………….....v
目錄………………………………………………………………………………….…vi
圖目錄………………………………………………………………………………...viii
表目錄…………………………………………………………………………………..x
第一章 緒論……..……………………………………………………………………..1
1.1前言…………………………………………………………………………………1
1.2太陽能電池介紹 ………..…………………………………………………………..2
1.2.1工作原理……………...……….……………………………………………….2
1.2.2研究動機…….……...……….…………………………………………………6
1.3氧化銅與氧化亞銅薄膜製備方法與發展現況 ..……………….…………………11
第二章 理論基礎與文獻回顧 …………...………….………………………………...13
2.1氧化銅與氧化亞銅晶格結構特性 ………………………...………………………13
2.2濺鍍(sputtering) ……………………………………...…………………………….15
2.3反應式濺鍍 ……………………………….………………………………………..19
2.4薄膜形成機制 ……………………..……………………………………………….20
第三章 實驗方法與儀器介紹 …..………………………………………………….....22
3.1實驗流程規劃 …………………………………………………………………..….22
3.2薄膜製備…..……………………………………………………………………….23
3.3薄膜量測儀器介紹 …………..……...……………………………………………..25
3.3.1表面輪廓儀(Surface Profiler) …………………………..…………………….25
3.3.2四點探針(four-point probe system) …………………………………………..26
3.3.3紫外光-可見光光譜(Ultraviolet/Visible Spectrophotometer)……………….27
3.3.4雙晶薄膜x光繞射儀(X-ray diffractmeter, XRD)…………………………...30
3.3.5場發射型掃描式電子顯微鏡(Field Emitter-Scanning Electron Microscope). 34
3.3.6霍爾量測(Hall measurement)….......................................................................36
3.3.7太陽模擬光量測系統(Solar simulator)………………………………………39
第四章 結果與討論………………………………………………………………….40
4.1氧氣比例對薄膜晶相之影響 ……………………………………………………...40
4.2氧化銅薄膜特性探討……………………………………………………………...44
4.3氧化亞銅薄膜特性探討…………………………………………………………...48
4.3.1低氧氣變化量對氧化亞銅薄膜之影響 ………………………………………48
4.3.2元件製作 ………………………………………………………………………55
第五章 結論…………………………………………………………………………..56
參考文獻……………………………………………………………………………….57

[1]M. Gratzel, Nature, 414, 388(2001)
[2]陳宗隴,影響硒化銅銦鎵太陽能電池表現之元件特性,國立東華大學(2006)
[3]E. Kim, Z.T. Jinag, K. No, Jpn. J. Appl. Phys, Vol. 39(2000)
[4]M. Sugawara, N. Okazaki, T. Fujii, S. Yamazaki,Phys. Rev. B 48, 8102,8118(1993)
[5]徐賓鴻,可撓式CuInSe2 薄膜太陽能電池之研製,國立中山大學(2008)
[6]H.J. Moller, Semiconductors for Solar Cells, p32, ISBN0,89006,574,8
[7]K.A. Munzer, Siemens Solar GmbH, Germany, IEEE, VOL. 46, NO. 10(1999)
[8]M.Y. Li, Optoelectronic Applications: Solar Cell, NCUT(2009)
[9]A. Mittiga, E. Salza, F. Sarto, M. Tucci, R. Vasanthi, Appl. Phys, 163502(2006)
[10]Solar cell講義,國立彰化師範大學(2010)
[11]B.K. Kenneth, E. Minoux, L. Hudanski, Nature ,437, 968(2005)
[12]B. O’Regan, M. Gratzel, Nature, 353 (1991)
[13]T. Maruyama, Solar Energy Materials &; Solar Cells, 56(1998)
[14]T.D. Golden, M.G. Shumsky, Y. Zhou, R.A. VanderWerf, J.A. Switzer, Chem. Mater, 8, 2499,2504(1996)
[15]B. P. RAI, Solar Cells, 25, 265, 272(1988)
[16]A. Eastman, P. H. Fuoss, L.E. Rehn, P.M. Baldo, G.W. Zhou, D.D. Fong, L.J. Thompson, Appl. Phys, 051914(2005)
[17]A Mittiga, E Salza, F. Sarto, M. Tucci, R. Vasanthi, Appl. Phys. Lett, 88, 163502(2006)
[18]M. Izaki, Appl. Phys, 40,3326
[19]C.L. Kuo, R.C. Wang, J.L. Huang, C.P. Liu, C.K. Wang, S.P. Chang, W.H. Chu, C.H. Wang, C.H. Tu, Nanotechnology, 20, 365603(2009)
[20]D.S.Darvish, H.A. Atwater, Journal of Crystal Growth 319,39,43(2011)
[21]T. Minami, Y. Nishi, T. Miyata, J. Nomoto ,Appl.Phys. Express 4,062301(2011)
[22]W.Y. Ching, Y.N. Xu, Phy Rev.B vol.40 , no.11 (1989)
[23]陳乃為,銅氧核殼奈米顆粒間交互作用對自旋極化之影響,國立中央大學(2008)
[24] Plasma Sputtering, ETAFILM Technology Inc
[25]高正雄, 超LSI 時代- 電漿化學,復漢出版社(1999)
[26]D.M. Mattox, J.V. Sci, Technol. A7, vol. 1105 (1989)
[27]巫致瑋,反應性磁控濺鍍沉積氧化銅薄膜光電特性之研究,南台科技大學(2008)
[28]Physical Vapor Deposition-sputtering實驗講義,國立中山大學
[29]薄膜技術Thin film Technology,利豐非傳統加工科技館(2009).
[30]溫金瑞,直流式磁控濺鍍鈷膜於矽基板之結構變化與應用於OME製程之研究,國立成功大學(2002)
[31]蕭傑穎,封裝材料對於有機發光元件特性與壽命影響之研究,南台科技大學(2004)
[32]UV-Visible Spectroscopy, MS University(2012)
[33]A.B. Murphy, Solar Energy Materials &; Solar Cells, 91, 1326, 1337(2007)
[34]彭永福,以溶膠凝膠法製備SiO2薄膜作TFT閘極絕緣層材料,國立中山大學(2009)
[35]x-ray diffraction, Institute of physics ,Episode 530
[36]A Laboratory Manual for X-Ray Powder Diffraction, U.S. Geological Survey
[37]http://micron.ucr.edu/public/manuals/Sem-intro.pdf
[38]L.J. Men, M.P. Santos, Thin Solid Films, 322(1998)
[39]J. Bardeen, W.H. Brattain, W. Shockley, J. Chem, Phys., 14, 714 (1946).
[40]V.F. Drobny, D. L. PULFREY, Thin Solid Films, 61, 89, 98(1979)