臺灣博碩士論文加值系統

隨著科技的發展以及可攜式電子產品的進步，人們對於非揮發性記憶體的需求也就越來越高。為了要增加記憶體的容量，記憶體元件就必須要不斷的縮小以增加單位面積的記憶體密度。然而，隨著記憶體尺寸的微縮，將會面臨許多可靠度以及物理極限的問題。因此，發展次世代非揮發性記憶體是必須的。而在眾多種類的次世代非揮發性記憶體中，電阻式隨機存取記憶體是被認為具有發展潛力的非揮發性記憶體之一。然而，電阻式隨機存取記憶體同樣面臨一些問題有待去研究與解決。因此，本研究內容除了研究電阻切換之機制與原理外，更加提出了改善電阻切換機制之方法以及設計一具有可修復切換特性之電阻式隨機存儲記憶體。
從之前的研究文獻指出，電阻式非揮發性記憶體之切換特性與氧原子的飄移息息相關，因此，我們製作了一個以氧化鎵為主要電阻切換層的電阻式記憶體，並改變其電阻切換層之氧含量來觀察其電阻切換特性之變化與差異。
接著，我們利用鉍鐵氧化物來當作我們的主要電阻切換層，並研究其電阻切換特性。我們藉由觀察鉍鐵氧化物的電阻切換特性發現許多有趣的現象。電阻式非揮發性記憶體的工作原理是利用電阻切換層的阻值大小來記憶狀態，而其電阻切換的方是大多藉由導電途徑的產生與斷裂來達到電阻切換的目的，但是鉍鐵氧化物的電阻切換特性卻可以利用漏電途徑的完全破壞以及再建立來改善切換特性。這是一個非常實用的特性，因為電阻式非揮發性記憶體是屬於後段製程，並沒有辦法利用熱退火的方式來改善薄膜電阻切換特性，因此藉由單純的定性操作即可達到改善切換特性的目的是非常實用的特性。此外，它在崩潰後仍具有可修復特性，並在修復後依然有電阻切換特性。
本論文的另一部分著重在具有可修復特性之原件設計與分析，我們提出了一個具有可修復特性特性之原件結構，並研究其修復過程，此結構除了具有可修復特性外，其電阻切換可由單邊(unipolar mode)或雙邊(bipolar mode)操作，此特性在電路設計上是相當方便的。
論文的最後，我們利用一些特殊的操作方式使的銦鎵鋅氧化物薄膜電晶體(a-IGZO TFT)同時具有RRAM的電阻切換特性，如此一來可以增加薄膜電晶體在使用上的價值。

With the development of portable electronic products, the requirement of nonvolatile memory is higher than before. In order to increase the capacity of nonvolatile memory in portable electronic products, the nonvolatile memory device must be scaled down. However, traditional nonvolatile floating gate memory is confronting some physical limits as devices continuously scale down. Hence, it is necessary to develop other kinds of nonvolatile memory, and resistive random access memory (RRAM) is considered one of the most potential candidates of the next generation. However, the switching mechanism or some problems about RRAM has not been solved. Hence, this study will investigate the switching mechanism of RRAM and provide a RRAM device with recoverable property. In addition, the I-V cures will be analyzed during the recovering process.
In the first part, we proposed gallium oxide based RRAM devices with various oxygen concentration, and investigated the switching mechanism of gallium oxide with different oxygen concentration, because the resistive switching behavior is related to the migration of oxygen ion.
In the second part, we proposed a RRAM device with Pt/BiFeO3/TiN structure and investigated the resistive switching characteristics of BiFeO3 film. The resistive switching layer of BiFeO3 film exhibits some interesting properties. The resistive switching of BiFeO3 can be improved by applied DC bias without thermal anneal process. Furthermore, the resistive switching characteristic of BiFeO3 film can be recovered by constant current stress after hard breakdown.
In the third part, we design a RRAM device with Pt/InO/SiO2/TiN structure which has fast recoverable characteristic. After hard breakdown process, the RRAM device with Pt/InO/SiO2/TiN exhibits fast recoverable property by constant current stress, and the recovering process is investigated by the analysis of carrier transport.
Finally, the indium-gallium-zinc-oxide (a-IGZO) TFTs exhibit transistor and RRAM characteristic after particular forming process, and this additional function can increase the value of a-IGZO TFTs for display industry.

Acknowledgements i
摘要 iii
Abstract v
Contents vii
Figure &; Table Captions x
Chapter 1 Introduction 1
1.1 Overview of Nonvolatile Memory Device 1
1.2 Resistance switching memory 4
1.3 Organization of the Dissertation 6
References: 8
Chapter 2 Basic Principle of Resistive Random Access Memory 19
2.1 Introduction of Memory Device 19
2.2 Advanced Non-volatile Memories 20
2.2.1 FeRAM (Ferroelectric Random Access Memory) 20
2.2.2 MRAM (Magnetic Random Access Memory) 21
2.2.3 PCRAM (Phase Change Random Access Memory) 22
2.2.4 RRAM (Resistance Random Access Memory) 22
2.3 The Materials of RRAM 23
2.3.1 Perovskite 24
2.3.2 Transition Metal Oxides 26
2.3.3 Organic Materials 27
2.4 The resistive switching mechanism of RRAM 27
2.4.1 Filament 28
2.4.1.1 Joule Heating Effect 28
2.4.1.2 Redox Processes by Cation Migration 29
2.4.1.3 Redox Processes by Anion Migration 29
2.4.2 Charge-Trap in Small Domain 30
2.4.3 Modified Schottky Barrier Model 31
2.5 The Mechanism of Current Conduction 32
2.5.1 Ohmic Conduction 32
2.5.2 Schottky Emission 33
2.5.3 Poole-Frenkel Emission 34
2.5.4 Space Charge Limited Current 35
References: 36
Chapter 3 Influence of oxygen concentration on resistance switching characteristics of gallium oxide 51
3.1 Abstract: 51
3.2 Introduction: 51
3.3 Experiment: 53
3.4 Results and Discussions: 54
3.5 Conclusion: 58
References: 59
Chapter 4 Investigation on the resistive switching characteristics of BiFeO3 69
4.1 Abstract: 69
4.2 Introduction: 70
4.3 Experiment: 71
4.4 Results and Discussions: 72
4.4.1 Enhancement of the stability of resistive switching characteristics by conduction path reconstruction 72
4.4.2 Investigation of multi-state switching mechanism for Set process 75
4.4.3 Investigation of constant current stress effect on RRAM device 79
4.5 Conclusion: 81
References: 83
Chapter 5 Fabrication and investigation of recoverable RRAM device 99
5.1 Abstract: 99
5.2 Introduction: 100
5.3 Experiment: 101
5.4 Results and Discussions: 101
5.4.1 Influence of forming process on resistance switching characteristics of In2O3/SiO2 bi-layer 101
5.4.2 Self-recovery phenomenon in a resistance random access memory device by constant current stress 106
5.5 Conclusion: 109
References: 111
Chapter 6 The application of RRAM on InGaZn oxide thin film transistor 126
6.1 Abstract: 126
6.2 Introduction: 126
6.3 Experiment: 127
6.4 Results and Discussions: 128
6.5 Conclusion: 132
References: 134
Chapter 7 Conclusion 143

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