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研究生:廖伯諭
研究生(外文):Liao, Po-Yu
論文名稱:矽與鍺共振多光繞射之相位研究
論文名稱(外文):Resonant multi-wave x-ray diffraction study of phase problem on silicon and germanium
指導教授:張石麟
指導教授(外文):Chang, Shih-Lin
學位類別:博士
校院名稱:國立清華大學
系所名稱:物理系
學門:自然科學學門
學類:物理學類
論文種類:學術論文
論文出版年:2013
畢業學年度:101
語文別:中文
論文頁數:123
中文關鍵詞:相位問題共振多光x光繞射Renninger 掃描
外文關鍵詞:phase problemresonant multi-wave x-ray diffractionRenninger scan
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本論文使用共振多光繞射方法研究繞射光在晶體內之動力效應。利用多束繞射光在晶體內的同調干涉,由干涉過程把相位訊息帶出來,使其顯露在繞射圖譜上。不同能量之入射光,多光繞射結構因子乘積之不變相位與原子散射因子之異常色散修正有關。當入射x光能量接近繞射系統中的成分原子之吸收邊時,繞射的振幅與相位二者對能量之改變是非常靈敏變化。因此,在共振與非共振能量上,測量晶體內繞射光之同調干涉之結果得其相位資訊,了解相位資訊與異常色散之關聯性,與其繞射物理特性。共振能量附近,選擇禁制反射為一階繞射,有效降低色散修正實部之貢獻,同時考量結構因子在共振能量上具張量特性,藉此獲得更多的相位資訊。二階以上之繞射光則挑選較高階之反射面,降低靜力項於複繞射峰型之貢獻,定量的估計相位資訊。
This thesis reported that the multi-wave x-ray diffraction technology was employed in studying the dynamical effects of these diffracted beams in the crystals. These diffracted beams within the crystals produced the coherent interference. Phase information was extracted during the interference process and exhibited it on the diffraction pattern. The invariant phase of the structure factor of the multi-wave diffraction depended on the anomalous dispersion correction of the atomic scattering factor which changed with the different photon energy. Both of the amplitude and phase of the diffracted beams were very sensitive to shift with energy, when the incident x-rays were tuned to an energy close to the absorption K-edge for one of the constituent atoms of the diffraction system. Therefore, measuring the coherent interference of the diffracted beam in the crystal obtained the phase information at resonant and non-resonant conditions to understand the correlation between the phase information and the anomalous dispersion correction which were related to the properties of diffraction physics. Choosing the forbidden reflection as the primary reflection decreases the contribution of the real part of the anomalous dispersion correction and considering the tensor form properties of the structure factor near the resonant energy to receive more phase information. The high-order hkl reflections are chosen as the secondary reflection to reduce the kinematical effect in the multi-wave line-profile to estimate the phase information quantitatively.
目錄
摘要................................................................I
Abstract.............................................................II
目錄...............................................................III
圖目錄.............................................................VI
表目錄............................................................VII
第一章 緒論.........................................................1
1-1 x光相位問題與不變相位.......................................1
1-2 定量與定性的相位決定........................................4
1-3 系統化產生複繞射方法........................................7
1-4 N光繞射.....................................................9
1-5 定碼.......................................................12
第二章 動力繞射理論................................................19
2-1 基本波場方程式.............................................19
2-2 特徵值特徵向量方程式.......................................23
2-3 電磁場在平板晶體之邊界條件.................................27
2-4 動力繞射模擬繞射強度.......................................31
第三章 共振多光繞射................................................34
3-1 古典偶極子的散射...........................................34
3-2 量子力學方法...............................................37
3-3多光繞射與波恩近似..........................................39
3-4禁制反射....................................................55
3-5 Friedel規則失效..............................................57
第四章 實驗設備與相位分析方法......................................60
4-1 實驗設備...................................................60
4-1-1 BL16A光束線簡介......................................60
4-1-2 BL12B2光束線簡介.....................................63
4-2 樣品介紹...................................................65
4-3相位分析方法................................................67
4-3-1利用不對稱羅倫茲方程式定量估計不變相位................67
4-3-2 利用三光繞射強度之強度比值定量估計不變相位...........69
4-3-3 利用三光繞射強度扣除重建之靜力項定量估計不變相位.....73
第五章 數據討論分析................................................75
5-1 Ge(002).....................................................75
5-1-1 Ge(002)禁制反射與螢光量測.............................75
5-1-2 電多極矩之貢獻.......................................77
5-1-3 Ge(000)(002)(375)(37-3)四光繞射相位量測與分析............81
5-2 Ge(222).....................................................88
5-2-1 Ge(222)禁制反射.......................................88
5-2-2 Ge(000)(222)(-53-3)三光繞射之相位量測...................91
5-3 Si(222)......................................................96
5-3-1 Si(000)(222)(-111)三光繞射之相位分析.....................96
5-3-2 Si(001)禁制反射.......................................101
第六章 結論.......................................................105
參考文獻..........................................................106
附錄一............................................................108
附錄二............................................................111
附錄三............................................................113
附錄四............................................................115
附錄五............................................................117
附錄六............................................................121

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