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研究生:許鶴龍
研究生(外文):Syu, He-Long
論文名稱:高頻調變砷化鎵系列近紅外光發光二極體之研究
論文名稱(外文):Study of High-Speed GaAs-Based Near-Infrared Light-Emitting Diodes
指導教授:吳孟奇
學位類別:碩士
校院名稱:國立清華大學
系所名稱:電子工程研究所
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2013
畢業學年度:101
語文別:英文
論文頁數:83
中文關鍵詞:發光二極體砷化鎵特徵接觸電阻頻率響應少數載子生命期
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在本文中,我們製作以氧化鎵鋅薄膜作為電流散布層的高頻調變近紅外光發光二極體,並探討其對元件特性的影響;其中氧化鎵鋅薄膜與p型重摻雜砷化鎵之間存在1.7×10-5 Ω-cm2低的特徵接觸電阻。而在近紅外光發光二極體的元件特性方面,對於我們所設計的所有元件在20 mA的情況下所呈現的順向偏壓為1.6至1.7伏特、串聯電阻值為5至6 歐姆。對於最小發光面積的元件,元件在負5伏特下總電容為11.6 pF,以及50 mA下發光功率為4.6 mW。在元件製程設計方面,藉由環型金屬電極的設計及低電阻率的氧化鎵鋅電流散佈層的運用,得到元件頻率響應在50 mA下之 3dB 截止頻寬達107.8 MHz。
另外,也藉由少數載子生命期的觀點去驗證氧化鎵鋅薄膜在砷化鎵/砷化鋁鎵近紅外光發光二極體電流散布的效果;而少數載子生命期是很重要的參數,可從其中分析得到元件許多的相關特性。文中主要也分析了元件發光區域面積對於少數載子生命期的影響,並進一步求得在定電流下,發光二極體達到3dB頻寬為100 MHz時,所需的元件發光區域面積大小。就我們所製作的近紅外光發光二極體而言,在注入電流分別為 10、20、30、40和50 mA的情況下,達到3dB頻寬為100 MHz所需的元件發光區域圓面積直徑依序為13.50、25.51、47.06、66.42 和 80.30 µm。然而,在不同直徑的元件發光區域下,相同的電流密度有相同少數載子生命期,其少數載子生命期與電流密度之間存在著開根號成反比的關係,而與元件發光區域的直徑無關。這也代表著氧化鎵鋅薄膜在近紅外光發光二極體中有良好的電流散布特性。

摘 要......................................................I
Abstract.................................................III
致 謝......................................................V
List of Figure............................................IX
List of Table............................................XIV
Chapter 1 Introduction.....................................1
1-1 Original...............................................1
1-2 Research Motivation....................................2
1-2-1 Plant Grow Light, PGL................................2
1-2-2 Visible Light Communication, VLC.....................4
1-3 Organization of the thesis.............................6
Chapter 2 Theoretical Analysis of High Speed LED...........8
2-1 High-Speed Light-Emitting Diode Modulation Principles..8
2-2 Circular Transmission Line Model (CTLM)...............14
2-3 Properties of GZO/GaAs Contact........................15
2-4 Theory of Current Spreading Layer.....................16
2-5 Characterization Instruments..........................17
2-5-1 I-V and C-V Characteristic Measurement Systems......18
2-5-2 Luminous Intensity (L-I) Measurement System.........18
2-5-3 Electroluminescence Spectrum(E-L)Measurement System.19
2-5-4 Divergence Angle Measurement System.................19
2-5-5 Near-Field Light Intensity Measurement System.......20
2-5-6 Frequency Response Measurement System...............20
Chapter 3 LED Device Structure And Fabrication............25
3-1 Epitaxial Structure Design Concept....................25
3-2 The Fabrication Process of CTLM.......................26
3-3 The Fabrication Process of NIR LED....................28
3-4 Experimental Procedures...............................30
Chapter 4 Results and Discussion..........................40
4-1 Devices measurement...................................40
4-2 Specific Contact Resistance of GZO on P+- GaAs........41
4-3 I-V Characteristics...................................43
4-4 C-V Characteristics...................................51
4-5 Electroluminescence Spectrum and L-I Characteristics..56
4-6 Divergence of angle...................................59
4-7 Frequency Response Bandwidth..........................62
Chapter 5 Characteristics Analysis........................66
5-1 Simulation............................................66
5-2 Evaluation of Current Spreading of GZO from the Aspect of Minority Carrier Lifetime..............................68
5-3 Near-field light intensity of the NIR LEDs............73
Chapter 6 Conclusions.....................................75
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