臺灣博碩士論文加值系統

現今科技發展日新月異，一日千里，電晶體製程逐漸縮小化，且根據「摩爾定律」，於未來2020年閘極製程長度預估為7.4 nm，而首當其衝之問題則為矽製程之物理極限，因此必須尋找新穎材料代替矽，近年來對於下一世代半導體研究主題如：奈米碳管（Cabon Nanotube）、奈米線（Nanowires）與石墨烯等等。因石墨烯具有高電子遷移率、良好熱導率與準二維結構之優異特性，故本實驗將選擇石墨烯作為代替矽之新興材料。
因單層石墨烯為零能隙材料，故本實驗為利用化學氣相沉積法製備少層石墨烯，並藉由TRT轉印至基板，並利用諸多儀器測量其特性，而本實驗所製備之石墨烯其透明度為91.5%、片電阻為2.62 ± 0.48 kΩ/sq、2D/G為0.81與D/G為0.09。
有別於其它文獻，本實驗將石墨烯應用於場效電晶體，所利用方式為金屬光罩加上脈衝雷射蝕刻，其製作方式簡單、速度快且成本花費低廉，最後再將石墨烯場效電晶體量測其電性。

Science and technology are advancing with each passing day, transistor process progressively miniaturization. According to "Moore's Law", transistor gate length will estimate about 7.4 nm in 2020. Silicon material will bear the brunt of problem of physical limitations. Therefore, we must find a new materials instead of silicon. In recent years, the next generation of semiconductors have some researches topics. For example, cabon nanotube、nanowires and graphene etc. Because graphene has excellent characteristics of high electron mobility, good thermal conductivity and quasi-two-dimensional structure, our study selected graphene to substitute silicon and hope it to solving the problem.
Because monolayer graphene is zero band gap materials, our study was prepared few layer graphene via chemical vapor deposition, and transferred to any substrate by TRT. Finally, using many instruments measure its characteristics. In this study, the graphene we prepared was 91.5% of the transparency, sheet resistance was 2.62 ± 0.48 kΩ/sq, 2D/G = 0.81 and the D/G = 0.09.
Different from other references, we used metal mask add pulse laser to pattern graphene channel, and applied to field-effect transistors. It’s a simple, easy and low cost method to fabricate graphene field-effect transistors. Finally, graphene field-effect transistors measured by semiconductor device parameter analyzer.

致謝 I
摘要 II
Abstract III
總目錄 IV
圖目錄 VIII
表目錄 XIV
第一章 緒論 1
1.1研究動機 1
1.2石墨烯介紹 4
1.2.1石墨烯之發現與結構 4
1.2.2石墨烯之電子特性 6
1.2.3石墨烯之能帶特性 8
1.3 石墨烯特性總結 10
第二章 石墨烯製備方式與元件介紹 11
2.1 石墨烯製備介紹 11
2.1.1 機械剝離法 12
2.1.2 磊晶成長法 13
2.1.3 化學氧化還原法 13
2.1.4 化學氣相沉積法 14
2.2 石墨烯電晶體介紹 16
2.2.1 金氧半場效電晶體介紹 16
2.2.2 石墨烯之生物與生化分子感測器元件 20
2.2.3 石墨烯之射頻元件 21
2.2.4 石墨烯之太陽能電池元件 23
2.3 文獻回顧 25
2.4 研究目的 32
第三章　元件製作與儀器介紹 33
3.1 銅箔成長石墨烯之製備流程 33
3.2 石墨烯之基板轉移與雷射顯影 38
3.2.1 轉印方式介紹 38
3.2.2 雷射之圖形定義 42
3.3 材料測量儀器介紹 43
3.3.1 掃描式電子顯微鏡 43
3.3.2 拉曼光譜儀 45
3.3.3 四點探針 49
3.3.4 紫外光／可見光分光光譜儀 51
3.3.5 穿透式電子顯微鏡 52
3.3.6 熱蒸鍍機 53
3.3.7 半導體參數分析儀 54
第四章 分析與結果討論 55
4.1 石墨烯之製備與特性量測 55
4.1.1 銅箔表面形貌 56
4.1.2 石墨烯製程時間討論 58
4.1.3 石墨烯轉印 60
4.1.4 調控製備石墨烯之冷卻氣體 61
4.1.5 石墨烯之晶相與繞射圖形 63
4.1.6 石墨烯穿透率探討 69
4.1.7 石墨烯片電阻量測 70
4.1.8 石墨烯之半導體參數量測 71
4.1.9 石墨烯特性量測總結 73
4.2 石墨烯元件製作及其特性測量 74
4.2.1 石墨烯元件之電性量測 76
第五章　結論 81
第六章　未來展望 83
參考文獻 84

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