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研究生:潘宇恆
論文名稱:32X32微橋結構陣列式紅外線感測元件應用於熱影像之研究
論文名稱(外文):The study of suspended bridge 32X32 infrared detector array application to thermal image
指導教授:張忠誠張忠誠引用關係陳洋元
指導教授(外文):Chun-chen changYang-Yuang Chen
學位類別:碩士
校院名稱:國立臺灣海洋大學
系所名稱:電機工程學系
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2013
畢業學年度:101
語文別:中文
論文頁數:91
中文關鍵詞:紅外線影像感測元件微橋結構TCR支撐層
外文關鍵詞:IR sensorMicrobridge structureTCRSupport layer
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本論文利用半導體製程技術搭配MEMS技術製作陣列式紅外線影像感測元件,利用RuOx-AlxOx具有高TCR的特性,運用於元件感測層。由於矽基板熱傳導非常快,為了降低熱傳我們採用微橋結構搭配光學諧振腔結構,提升特定波長的吸收,並建構吸收層及反射層於結構中,以增加紅外線吸收率,並在最後掏空釋放製成後使元件只靠兩支支撐腳於基板上,使元件熱傳導大幅降低,提升元件訊號,並運用於熱影像。
  在感測層方面,我們利用不同比例的RuOx-AlxOx混合物製作靶材,考慮TCR值越大越好,我們選用42%RuOx與58%AlxOx做混合,並使用射頻濺鍍機沉積薄膜。薄膜成長時我們利用不同壓力與不同溫度做為參數調整,最後以120 ℃、壓力16 mtorr條件下可得到最佳TCR值,在300k其值為-1.9(%K-1)。
  在元件特性方面,為了使元件熱容減少,降低支撐層厚度,我們利用不同機台沉積Si3N4支撐層,在Sputter以200℃下沉積Si3N4 500 nm以及PECVD在300℃沉積 Si3N4 200 nm都成功做為微橋結構之支撐層。
  在熱影像量測方面,我們將元件Bonding在PCB板上,並放入真空腔體內,再以黑體爐以50℃~150℃照射,於黑體爐出口前方處放不同形狀之遮罩體進行影像測試,並搭配中研院物理所朱明禮博士設計的讀取電路將照光前後訊號變化量轉換成電阻變化量,並透過程式顯示在電腦上,完成熱影像之量測。

This thesis was using semiconductor process technology with MEMS technology to produce an array infrared image sensor. The sensor layer material was RuOx-AlxOx with its high TCR characteristics. To enhance the absorption of a specific wavelength, the absorption layer and the reflective layer are constructed in the structure and increase the absorption rate of infrared. Thermal conductance is very large on silicon substrate. In order to reduce thermal conductance with micro-bridge structure optical resonator structure, it was fabricate by the release that device would be alone two legs on the substrate. By this two methods, we could enhance device signals and substantially reduce thermal conductance of device, respectively, and could be applied to thermal imaging.
In the sensor layer, we use different mixture ratio of RuOx-AlxOx target. The larger absolute value of TCR could enhance the device quality, we mix 42% RuOx and 58% AlxOx together and deposited by RF sputtering film. The thin films growth parameters were different pressures and temperatures. Finally, the best parameters of high TCR was that sensor layer is deposited under 16 mtorr and 120 ℃,the value -1.9 (% K-1) at 300K.
In order to reduce heat capacity of the device, the thickness of the support layer was reduced. The Si3N4 support layer was deposited by different machine. It was deposited Si3N4 500 nm at 200 ℃ and in Si3N4 200 nm at 300 ℃ by sputter and PECVD, respectively. It was successfully used as micro-bridge structure support layer.
We bonded the gold wire on PCB, and placed into a vacuum chamber before the thermal imaging measurement. The blackbody radiation we setup was from 50 ℃~150 ℃. Different shapes mask was placed in front of the blackbody. The signal would convert to the resistance variation with Dr. Zhu designed read circuit, and was exhibited in display with computer program. Finally, we could saw an complete thermal image.

摘要 i
Abstract ii
誌謝 iii
Chapter 1 緒論 1
1-1 研究背景與動機 1
1-2 紅外線簡介 1
1-3 紅外線感測器簡介 2
1-4 論文概述 2
Chapetr 2 物理特性及紅外線感測器之基礎理論 4
2-1 紅外線基礎 4
2-1.1 Stefan-Boltzmann 定律 4
2-1.2 Planck's 定律 4
2-1.3 Wien 位移律 5
2-2 熱敏阻元件原理 5
2-3 紅外線感測器的評價方法 5
2-3.1 電阻溫度係數(TCR) 5
2-3.2 響應度(Responsivity) 5
2-3.3 雜訊等效功率(NEP,Noise Equivalent Power) 6
2-2.4 歸一化感測度(Specific detectivity ,D*) 6
2-3 支撐層在不同機台分析探討 7
2-3.1 熱容(thermal capacity) 7
2-3.2 射頻濺鍍機(Sputter)氮化矽(Si3N4) 7
2-3.3 電漿輔助化學氣相沉積(PECVD)氮化矽(Si3N4) 7
Chapter 3 製程儀器與元件製程介紹 9
3-1 製程儀器介紹 9
3-1.1 黃光微影製程 9
3-1.2 熱蒸鍍機(Thermal Evaporator) 9
3-1.3 濺鍍系統 10
3-1.4 電漿增強型化學氣相沉積(Plasma-enhanced chemical vapor deposition) 10
3-1.5 濕式蝕刻(Wet Etching) 10
3-1.6 反應式離子蝕刻(Reactive Ion Etch) 11
3-2 製程量測設備 11
3-2.1 掃描式電子顯微鏡 (Scanning Electron Microscopy) 11
3-3 紅外線感測元件製程介紹 12
3-3.1 微橋結構元件介紹 12
3-3.2 光罩設計 13
3-3.3 元件製程介紹 13
3-4 製作RUOX-ALXOX靶材 16
Chapter 4 實驗結果與討論 17
4-1 RUOX-ALXOX 粉末及薄膜特性分析 17
4-1.1 RuOx-AlxOx 粉末特性分析 17
4-1.2 RuOx-AlxOx 薄膜特性分析 17
4-2 元件製程OM及SEM量測 17
4-2.1 元件OM量測 17
4-2.2 元件犧牲層SEM量測 18
4-2.3 不同厚鍍支撐層及不同結構懸浮情況SEM量測 19
4-3 微橋結構之分析 19
4-3.1 感測器設計基本參數 19
4-3.2 不同支撐層厚度之熱傳導分析 20
4-4 紅外線感測元件電性與光學系統量測 20
4-4.1 紅外線感測元件光學系統 20
4-4.2 電壓變化量量測 20
4-4.3 響應時間量測 21
4-4.4 響應電壓量測 21
4-4.5 雜訊等效功率與感測度 21
4-4.6 歸一化感測度(D*) 量測 21
4-4.7 紅外線熱影像量測 21
Chapter 5 結論 23
參考文獻 75

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