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研究生:陳威穎
研究生(外文):Wei-Ying Chen
論文名稱:以射頻電漿輔助化學氣相沉積含氮類鑽碳薄膜於具有CrTaN中間層之碳化鎢底材的熱穩定性質探討
論文名稱(外文):Investigation on the Thermal Stability of Amorphous Carbon Nitride Films on WC-Co substrates with a CrTaN Interlayer by RF-PECVD Process
指導教授:周昭昌
指導教授(外文):Chau-Chang Chou
學位類別:碩士
校院名稱:國立臺灣海洋大學
系所名稱:機械與機電工程學系
學門:工程學門
學類:機械工程學類
論文種類:學術論文
論文出版年:2013
畢業學年度:101
語文別:中文
論文頁數:72
中文關鍵詞:含氮類鑽碳薄膜氬氣碳化鎢
外文關鍵詞:Carbon nitride filmsArtungsten
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本論文以射頻電漿輔助氣相沉積(RF-PECVD)技術,製作非晶含氮類鑽碳薄膜於具有CrTaN中間層之燒結碳化鎢底材,研究該薄膜的組成成分、結構、表面形貌、機械性質和熱穩定性。製程參數分成兩種氣氛(CH4、N2,以及CH4、N2加入Ar),以及改變射頻功率來進行比較,之後檢測試片在熱循環試驗前後的材質變化,以觀察薄膜的熱穩定性。由電子能譜儀(XPS)、波長散射式X射線螢光分析儀(WD-XRF)來量測成分和鍵結,以拉曼光譜(Raman)和傅立葉轉換紅外線光譜(FTIR)分析結構與官能基,透過光學顯微鏡(OM)、原子力顯微鏡(AFM)觀察不同尺度下的表面形貌。從FTIR光譜中發現,加入Ar的試片其H含量都比較低,可能是因為Ar的加入增加了轟擊效果,使C-H、N-H鍵被打斷。而熱循環實驗後不管有沒有加入Ar,兩組以80瓦RF功率製作的試片都發生破裂,以較高功率(100與120瓦)製作的試片則能通過熱循環實驗。由拉曼光譜得知,加入Ar的試片在熱循環後ID/IG值比不加Ar的試片高,代表加入Ar的試片在熱循環後的石墨化程度較高。由XPS光譜得知Ar的加入對於N含量沒有幫助,但由加入Ar而以120瓦功率製作的試片發現Ar在高功率下有事先淘汰含氮物種的機制,使薄膜中的氮含量相對較低,但熱循環後的成分就與其他試片差不多。
Carbon nitride films were deposited on tungsten substrates with CrTaN interlayer by radio frequency plasma enhanced chemical vapor deposited technique. Two mixtures, CH4-N2 and CH4-N2-Ar, under various RF powers were applied during the coating processes. The thermal stability of carbon nitride film was tested by cyclic thermal from room temperature up to 600 ℃. Chemical composition and structural properties were examined by X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, Fourier transform infrared spectroscopy (FTIR), and wavelength dispersive X-ray fluorescence (WD-XRF). Surface morphology and roughness were evaluated by scanning electron microscope (SEM), optical microscope, and atomic force microscopy (AFM). FTIR spectroscopy showed that the CNx film, built with the addition of Ar, has lower H content. It might be due to the enhancement of Ar on the bombardment effect which induces the breakage of C-H and N-H bonds. Cyclic heating experiments showed that the samples, with or without Ar precursor, built by 80 W RF power were both ruptured. On the other hand, those samples built by higher RF powers, 100 and 120 W, survived after the cyclic heating tests. Raman spectroscopy indicated that CNx films built with Ar precursor has a higher graphitization level. XPS analysis revealed that, with the help of Ar precursor on eliminating the N specimen before the deposition stage, the CNx film built by higher RF power, 120 W, can has a relatively low N content. However, after the cyclic heating tests, the N content of all samples were nearly the same.
摘要 I
ABSTRACT II
目錄 III
表目錄 V
圖目錄 VI
第一章 緒論 1
1.1 前言 1
1.2研究動機 1
1.3論文架構 2
第二章 文獻回顧 7
2.1電漿原理 7
2.2類鑽碳薄膜 7
2.3含氮類鑽碳薄膜 8
2.4氬氣輔助 9
2.5燒結碳化鎢 9
2.6擴散阻障層 9
2.7研究目的 10
第三章 實驗方法 20
3.1實驗流程 20
3.2試片準備 20
3.3鍍膜裝置 20
3.4熱循環實驗 21
3.5分析儀器 21
3.5.1 光學顯微鏡 21
3.5.2 原子力顯微鏡 21
3.5.3 X射線螢光分析儀 21
3.5.4 X光光電子能譜儀 21
3.5.6 掃描式電子顯微鏡 22
3.5.7拉曼光譜儀 22
3.5.8 傅立葉轉換紅外線光譜儀 22
第四章 結果與討論 28
4.1 XRF成分分析 28
4.2 拉曼光譜分析 28
4.3 FTIR分析 28
4.4 X光光電子能譜儀分析 29
4.5 表面形貌分析 30
第五章 結論 60

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