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研究生:陳立人
研究生(外文):Li-Ren Chen
論文名稱:多功能有機自組裝單分子層自旋閥
論文名稱(外文):Multifunctional Organic Spin Valve with Self-Assembled Monolayer Barrier
指導教授:林敏聰林敏聰引用關係
口試委員:江文中李連忠何家驊
口試日期:2012-07-02
學位類別:碩士
校院名稱:國立臺灣大學
系所名稱:物理研究所
學門:自然科學學門
學類:物理學類
論文種類:學術論文
論文出版年:2013
畢業學年度:101
語文別:英文
論文頁數:45
中文關鍵詞:自組裝單分子層硫基磁阻滯後現象多功能
外文關鍵詞:Self-assembled monolayerThiolMagnetoresistanceHysteresisMultifunction
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我們探討了有機自組裝單分子層自旋閥表面、磁性和電性上的表現。我們嘗試使用了壓印製程和低功率濺鍍來製備上層鐵磁電極以防止上層分子擴散到有機層或直接連接到下層電極。最後發現低功率濺鍍上層電極可以避免這些問題 。 經過完整的剖析後發現元件有電滯的現象可能來自於電子穿隧效應及有機分子和鐵磁層介面電賀累積的貢獻。在這個實驗中,我們成功的製備出室溫下1%的磁阻且成功展示出電阻態在外加脈衝刺激下的轉換。這些特性讓我們發現單一元件可同時具備有磁阻式和電阻式非揮發性記憶體的潛力。

We report the surface, magnetic and charge transport in organic spin valve structure (Ferromagnetic/Organic/Ferromagnetic) with self-assembled monolayer barrier. We have built top ferromagnetic electrode by transfer printing and sputtering to prevent interdiffusion or pinhole and observed that the interdiffusion could be suppressed by lowering the fabrication energy of the top ferromagnetic layer. A through study of the device characteristics reveals that the hysteresis on I-V measurement is proposed to contribute from tunneling through junction and charge trapping on the thiol and ferromagnetic interface. Magnetoresistance ratio is 1 % have reported in our system. We have demonstrated how the device can switch between two pair of conducting state for the potential of develop multifunction memory device which combine MRAM and RRAM properties

1 Introduction and Motivation 1
2 Basic Concepts 4
2.1 Magnetic Tunnel Junction . . . . . . . . . . . . . . . . . . . . . . . . 4
2.2 Self-Assembled Monolayer . . . . . . . . . . . . . . . . . . . . . . . . 5
2.3 Soft Lithography . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2.4 Charge Carrier Injection and Transport . . . . . . . . . . . . . . . . . 7
2.4.1 Simmons’ Formula . . . . . . . . . . . . . . . . . . . . . . . . 7
2.4.2 Injection Charge Limit Current . . . . . . . . . . . . . . . . . 9
2.4.3 Space Charge Limit Current . . . . . . . . . . . . . . . . . . . 10
3 Apparatuses and Materials 11
3.1 Sample Preparation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
3.1.1 Magnetron Sputtering System in UHV Chamber . . . . . . . . 12
3.1.2 Growth of Self-Assembled Monolayer . . . . . . . . . . . . . . 16
3.2 Sample Analysis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
3.2.1 Surface Properties . . . . . . . . . . . . . . . . . . . . . . . . 16
3.2.2 Magnetic Properties . . . . . . . . . . . . . . . . . . . . . . . 17
3.2.3 Control System . . . . . . . . . . . . . . . . . . . . . . . . . . 17
3.2.4 Charge Transport Properties . . . . . . . . . . . . . . . . . . . 18
3.3 Materials . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
3.3.1 Sputtering Materials . . . . . . . . . . . . . . . . . . . . . . . 21
3.3.2 Π-Conjugated Molecules . . . . . . . . . . . . . . . . . . . . . 21
3.3.3 Polymer Stamps of Transfer Printing . . . . . . . . . . . . . . 21
4 Results and Discussion 22
4.1 Surface Measurement . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
4.2 Charge Transport Measurement . . . . . . . . . . . . . . . . . . . . . 23
4.2.1 Current-Voltage Measurement . . . . . . . . . . . . . . . . . . 23
4.2.2 Current-Voltage Fitting . . . . . . . . . . . . . . . . . . . . . 24
4.2.3 Current-Voltage Measurement with Different Scan Rates . . . 27
4.2.4 Pulse Current Measurement . . . . . . . . . . . . . . . . . . . 28
4.3 Magneto-Optical Kerr Effect . . . . . . . . . . . . . . . . . . . . . . . 28
4.4 Magneto Resistance Measurement . . . . . . . . . . . . . . . . . . . . 29
5 Conclusion 37
Bibliography 39

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