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研究生:李劭皇
研究生(外文):Shao-Huang Li
論文名稱:銻化鎵與銻磷砷化銦的選擇性蝕刻研究
論文名稱(外文):Study on Selective Wet-chemical Etching for GaSb and InAsPSb
指導教授:林浩雄林浩雄引用關係
口試委員:毛明華王智祥陳建光
口試日期:2013-07-18
學位類別:碩士
校院名稱:國立臺灣大學
系所名稱:電子工程學研究所
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2013
畢業學年度:101
語文別:中文
論文頁數:43
中文關鍵詞:選擇性蝕刻銻磷砷化銦銻化鎵
外文關鍵詞:selective etchingInAsPSbGaSb
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本論文研究使用氣態源分子束磊晶法成長一系列不同成分的銻磷砷化銦(InAsPSb)合金塊材於n型的(1 0 0)銻化鎵基板上,並研究以鹽酸溶液及氫氟酸溶液蝕刻銻化鎵及銻磷砷化銦之特性,以找出一個適用於銻化鎵及銻磷砷化銦的選擇性蝕刻配方。
對於鹽酸溶液,我們研究了氧化劑的含量對蝕刻率的影響。發現鹽酸溶液對銻化鎵蝕刻,其蝕刻率與雙氧水的含量成線性關係。此外也對於溫度與銻磷砷化銦的成分對於蝕刻率的影響進行研究。
在氫氟酸溶液方面,我們對銻磷砷化銦材料成分與蝕刻率的關係做出了探討,並在蝕刻InAs0.48P0.36Sb0.16及銻化鎵時找到了很高的蝕刻選擇比,其值為159.75。並以這個優良的選擇性蝕刻劑成功的製作了微碟結構。

In this thesis, a series of InAsPSb with different composition was grown on (100) n-type GaSb substrate by a GSMBE system. In order to find a selective wet-chemical etchant, we study the characteristics of hydrochloric acid-based and hydrofluoric acid-based solutions etchant for InAsPSb and GaSb.
For hydrochloric acid-based solution, the influence of oxidizing agent on etch rate was studied. We found that etching rate of GaSb with hydrochloric acid-based solution is a linear function of the volume H2O2. Besides, we investigate the dependence between the etch rate, temperature and composition of InAsPSb.
For hydrofluoric acid-based solution, we also investigate the dependence between the etch rate and composition of InAsPSb. Furthermore, we found there is significant selectivity about 159.75 between GaSb and InAs0.48P0.36Sb0.16, indicating that solution will be very useful in the fabrication of devices based on InAsPSb/GaSb heterostructure. Then we successfully fabricated a microdisk structure by using the hydrofluoric acid-based solution.


誌謝 I
中文摘要 II
Abstract III
目錄 IV
附表索引 V
附圖索引 VI
第一章 序論 1
1.1研究動機與相關研究 1
第二章 實驗前的準備及儀器簡介 7
2.1 使用儀器簡介 7
2.2 樣品磊晶結構 8
2.3 樣品蝕刻步驟 9
第三章 實驗過程、結果與討論 17
3.1 HCl-H2O2-H2O溶液:雙氧水含量對蝕刻的影響 17
3.2 HCl-H2O2-H2O溶液:溫度與銻磷砷化銦成分的影響 19
3.3 HF-H2O2-H2O溶液:銻磷砷化銦成分的影響 21
第四章 結論 39
參考文獻 42

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[4]E. A. Grebenshchikova, V. V. Sherstnev, S. S. Kizhaev, T. B. Popova, and Y. P. Yakovlev, “Creating disk-shaped cavity with a vertical side surface for an Infrared whispering-gallery-mode laser (λ~3.0μm),” Tech. Phys. Lett., vol. 34, pp. 953-955, 2008.
[5]O. Dier, C. Lin, M. Grau and M. C. Amann, “Selective and non-selective wet-chemical etchants for GaSb-based materials,” Semicond. Sci. Technol., vol. 19, pp. 1250-1253, 2004.
[6]G. C. DeSalvo, R. Kaspi, and C. A. Bozada, “Citric acid etching of GaAs1-xSbx, Al0.5Ga0.5Sb, and InAs for heterostructure device fabrication,” J. Electrochem. Soc., vol. 141, pp. 3526-3531, 1994.
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[9]M. J. Howes, and D. V. Morgan, Gallium Arsenide materials, Devices, and Circuits, pp.127, 1985.

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