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研究生:許文又
研究生(外文):Hsu,Wen-Yu
論文名稱:以溶膠凝膠法製備ZnO-CeO2介電薄膜之研究
論文名稱(外文):Study of ZnO-CeO2 Dieletric Thin Film by using Sol-Gel method
指導教授:賴俊宏賴俊宏引用關係曾靜芳曾靜芳引用關係
指導教授(外文):Lai,Chun-HungTseng,Jing-Fang
口試委員:賴俊宏林育儒曾靜芳
口試委員(外文):Lai,Chun-HungLin,Yu-RuTseng,Jing-Fang
口試日期:2013-01-09
學位類別:碩士
校院名稱:國立聯合大學
系所名稱:電子工程學系碩士班
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2013
畢業學年度:101
語文別:中文
論文頁數:82
中文關鍵詞:ZnO-doped CeO2 薄膜溶膠凝膠法
外文關鍵詞:ZnO-doped CeO2 thin filmSol-gel
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本研究是以溶膠凝膠法製備ZnO-doped CeO2的薄膜,在不同焦化溫度(200℃、300℃、400℃)、退火溫度(600℃、650℃、700℃)及ZnO不同重量百分比摻雜量(0wt%、1wt%、2wt%)的條件下製作試片,完成的試片以XRD、SEM、AFM分析薄膜結晶與微觀結構;以紫外光-可見光光譜儀對ZnO-doped CeO2/Glass 結構進行分析;使用HP4155半導體量測儀與HP4284對Ag/ZnO-doped CeO2/Si之金屬-絕緣體-半導體(MIS)結構進行介電特性(I-V、C-V)分析。
由XRD和SEM顯示ZnO-doped CeO2薄膜為多晶結構,隨焦化溫度及退火溫度越高則晶粒成長越明顯。而在AFM中可以得知薄膜表面粗糙度(Rms)隨焦化溫度與退火溫度增加而降低。另外,在可見光範圍中,薄膜的平均穿透率可達80%以上。
所得ZnO-doped CeO2薄膜的最佳製程條件為1wt% ZnO摻雜,焦化溫度400℃且退火700℃,其介電常數和散失因子分別為15.2(f=1kHz)與0.067,在外加電壓大小為0.5V時,薄膜漏電流為2.42×10-9A。

In this study, the ZnO-doped CeO2 films prepared by sol-gel method at different preheating temperature (200℃、300℃、400℃), annealing temperature (600℃、650℃、700℃) and levels in addition (0wt%、1wt%、2wt%) have been investigated. The crystal structure and morphology of the film were determined using X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM). The optical transmittance spectra of ZnO-doped CeO2/glass were measured by using a UV-visible recording spectrophotometer. The capacitance-voltage (C–V) and current-voltage (I–V) were measured for the MIS capacitors structure (Ag/ZnO-doped CeO2/Si) by using a HP4284 and a HP4155 Parameter Analyzer.
The XRD patterns and SEM images showed that the deposited films exhibited a polycrystalline microstructure. The grain growth increased with increasing preheating and annealing temperature. The surface roughness decreased with increasing preheating and annealing temperature. In addition, the average transmission in the visible range was over 80%.
At a preheating temperature of 400℃ and an annealing temperature of 700℃, the 1wt% ZnO-doped CeO2 film possesses a dielectric constant of 15.2 (f=1kHz), a dissipation factor of 0.067, and a leakage current of 2.42×10-9(A) at bias voltage of 0.5(V).

摘要 I
ABSTRACT II
目錄 IV
圖目錄 VI
表目錄 IX
第一章 緒論 1
1-1 研究背景與目的 1
第二章 理論 3
2-1 CeO2之基本特性 3
2-1-1 物理特性與晶體結構 3
2-1-2 化學特性 4
2-1-3 光學特性 5
2-2 溶膠凝膠法(Sol-Gel Method) 6
2-2-1 溶膠凝膠法簡介 6
2-2-2 溶膠凝膠法原理 7
2-2-3 溶膠-凝膠法的優缺點 10
2-3 介電理論 14
2-3-1 極化機制與介電常數 14
2-3-2 極化機制 17
2-3-3 介電損失 20
2-4 金屬-絕緣層-半導體結構(MIS structure)特性介紹 23
2-4-1 堆疊式的結構 23
2-4-2 MIS結構電荷及缺陷類型 24
2-5 薄膜的光學性質 25
第三章 實驗方法與步驟 26
3-1 實驗流程 26
3-1-1 材料的選擇 27
3-1-2 ZnO-doped CeO2前驅溶液的製備 27
3-1-3 基板清洗 28
3-1-4 ZnO-doped CeO2薄膜的旋鍍與熱處理 29
3-1-5電極的製作 30
3-2 薄膜特性量測 31
3-2-1 X光繞射分析儀(XRD) 31
3-2-2 高解析場發射掃描式電子顯微鏡(SEM) 34
3-2-3 原子力顯微鏡(AFM) 35
3-2-4 電性量測 36
3-2-5 光學量測 36
第四章 實驗結果與討論 37
4-1 物理特性分析 37
4-1-1 不同摻雜量之ZnO-doped CeO2薄膜X光繞射分析 37
4-1-2 不同摻雜量之ZnO-doped CeO2薄膜表面形貌分析 46
4-1-3 1wt% ZnO-doped CeO2薄膜粗糙度分析 51
4-1-4 不同摻雜量之ZnO-doped CeO2薄膜光學特性分析 57
4-2 電性分析 65
4-2-1 薄膜漏電流分析 65
4-2-2 薄膜介電常數與損失分析 71
第五章 結論 74
參考文獻 76


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