臺灣博碩士論文加值系統

本論文探討化學無電鍍鎳鈀金在p-GaN電極的製作，利用化學無電鍍具有選擇性沈積方式，節省電極製作成本，縮短製程時間。
研究Ni及Pd的厚度變化對鎳鈀金電極歐姆接觸之電性影響，從實驗中求得Pd的厚度對p-GaN電性的影響。實驗顯示，無電鍍鎳鈀金製程，在無鈀層的結構下，金層會有脫落現象。以傳輸線模型(Transmission Line Model, TLM) 求得Ni/Pd/Au電極在P型氮化鎵的特徵阻值，發現特徵阻值隨Pd的厚度而增加，比較氮氣與氬氣氛下退火，前者擁有較低的特徵阻值。電極的特徵阻值在氮氣氛下隨退火溫度升高至450℃而下降，之後隨增加退火溫度升高而上升。將具有最佳化的 鎳鈀金電極結構條件做成藍光二極體的電極，測量不同退火溫度下I-V、Electroluminescence(EL)，來探討化學無電鍍鎳鈀金Ni/Pd/Au 材料應用於元件上之後的元件特性。
化學無電鍍鎳鈀金應用於p-GaN電極，在電極製作過程，鈀層的存在影響發光二極體正向電壓(Vf)、光輸出功率及波長穩定性，鈀層的存在可以鎳與金形成共晶結構，有助於金在電極的附著力，使得化學無電鍍鎳鈀金在藍光發光二極體具有更好的電性表現。

In this thesis, electroless chemical Nikel-Palladium-Gold(Ni/Pd/Au) process was developed on p-GaN electrode. It is selective deposition which has cost and time saving benefit. The ohmic contact properties of p-GaN e- lectrode were studied by different Ni and Pd thickness. Au was peeling off the electrode without Pd in the tri-layer structure. Characteristic resistance of p-GaN electrode was measure by transmission line model(TLM).
Comparing nitrogen and argon atmospheric annealing, which showed the former has better performance than the latter. As annealing temperature increased to 450℃the resistance decreased, then increasing as temperature over 450℃. I-V, Electroluminescence(EL) and modulation bandwidth was observed by different treatment condition. Pd showed good to Au adhesion with Ni by eutectic formation.
Meanwhile, forward voltage (Vf), leakage current (IR) and wavelength were improved by Pd introduce.

摘要....................................................i
Abstract................................................iii
誌謝....................................................v
目錄....................................................vi
表目錄..................................................ix
圖目錄..................................................x
第一章 序論.............................................1
1.1前言.................................................1
1.2 LED現況.............................................3
1.3 研究動機............................................7
第二章 理論基礎.........................................8
2.1 透明導電薄膜........................................8
2.1.1 薄金屬膜..........................................8
2.1.2 氧化物半導體膜....................................8
2.2 光學性質............................................9
2.3 濺鍍原理............................................9
2.3.1 濺射(sputtering)..................................9
2.3.2 電漿(plasma)......................................10
2.3.3 濺鍍沈積(sputtering deposition)...................13
2.4 真空蒸鍍原理........................................13
2.4.1 真空理論..........................................14
2.4.2 蒸鍍理論..........................................15
2.5 無電鍍原理.........................................19
2.5.1 無電鍍鎳..........................................19
2.5.2 無電鍍鈀..........................................21
2.5.3 無電鍍金..........................................23
第三章 實驗方法與步驟...................................25
3.1 接觸電極製作........................................25
3.1.1 試片切割..........................................25
3.1.2 試片清洗..........................................25
3.1.3 黃光微影製程(Optical Lithography).................26
3.1.4 試片製備..........................................27
3.2 量測分析............................................31
3.2.1 傳輸線模型理論(TLM, Transmission Line Model)......31
3.2.2 電流.電壓(Current.Voltage) 特性量測...............37
3.3 量測儀器............................................38
3.3.1 曝光機台..........................................38
3.3.2 氧化高溫爐........................................38
3.3.3 SEM(Scanning Electron Microscopy).................39
第四章 結果與討論.......................................42
4.1 ρc-TLM.............................................42
4.1.1 不同膜厚結構對阻值的影響..........................42
4.1.2 不同退火時間對阻值的影響..........................46
4.1.3 不同退火溫度對阻值的影響..........................48
4.1.4 不同退火氣體對阻值的影響..........................50
4.2 光、電特性分........................................52
4.2.1 不同退火溫度對I.V 影響............................52
4.2.2 Pd鍍層結構對Vf的影響.............................54
4.2.2 鈀鍍層結構對光輸出功率的影響.....................56
第五章 結論.............................................58
參考文獻................................................59

[1] E. W. Williams and R. Hall, Luminescence a nd the Light Emitting Diode,(1977), 1.
[2] 許招墉, 光電工學概論, 全華科技圖書股份有限公司, (1990), 131.
[3] S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsuhia, H. Kiyoku,Y. Sugimto, T. Kozaki, H. Umemoto, M. Sano, and K. Chocho, “Continuous-wave operation of InGaN GaN AlGaN-based laser diodes grown on GaN substrates”, Appl.Phys. Lett. 72 (1998), 2014
[4]原田衛，山下勝之，藍雷射擴大光學磁碟容量至15 GB，NIKKEI ELECTRONICS ASIA, April, 1998.
[5] S. Nakamura and Gerhard Fasol, The Blue Laser Diode, ISBN-540-61590-3 (1997)196-197.
[6] M. S. Shur and M. Asif Khan, Mater. Res. Bull. 22 (1997) 44.
[7]M. A. Khan, J. N. Kuznia, D. T. Olson, J. M. Van Hove, M. Blasingame,and L. F. Reitz, “High-responsivity photoconductive ultraviolet sensors based on insulating single-crystal GaN epilayers”, Appl. Phys. Lett . 60(1992), 2917.
[8] Strategies Unlimited, Gallium Nitride-Technology Status and Applications Analysis (1997) 3.
[9] Strategies Unlimited, Gallium Nitride-Technology Status and Applications Analysis (1997) 21.
[10]M. A. Khan, A. R. Bhattarai, J. N. Kuznia, and D. T. Oslon, “Metal semiconductor field effect transistor based on single crystal GaN”, Appl. Phys. Lett. 62 (1993), 1786.
[11] J.L. Vossen, “transparent Conducting Films”, Physics of Thin Films , 9(1977), 1-64.
[12]李玉華, “透明導電膜及其應用”, 科儀新知, 12 卷第一期, (1980),94-102.
[13]楊明輝, “金屬氧化物透明導電材料的基本原理”, 工業材料雜誌, 179 期(2001) 134-144.
[14]B. Chapman, Glow Discharge Processes , John Wiley & Sons, New York,1980,177.
[15]B. Chapman, Glow Discharge Processes , John Wiley & Sons, New York,1980, 49.
[16]莊達人，“VLSI 製造技術”，高立圖書有限公司(2005)
[17] 吳旭晟，利用旋轉塗佈法及熱蒸鍍法製備硫化鎘及摻銅硫化鎘半導體薄膜，國立成功大學碩士論文，台灣，2008
[18] 陳璟文，以熱蒸鍍法製備摻銅硫化鎘/硫化鎘發光二極體元件暨微波加熱製備碲化鎘量子點之研究，國立成功大學碩士論文，台灣，2009
[19]伍秀菁、汪若文、林美吟編，真空技術與應用，國家科學研究院儀
器科學研究中心，台灣，2001
[20]陳寶清，表面工業雜誌 “真空表面處理工學”，表面工業，台灣，1992
[21]賴耿陽，真空蒸鍍應用技術，復漢出版社，台灣，1991
[22]逢板哲爾，“化學反應製造金屬薄膜”，表面處理工業雜誌, Vol.3, pp.25-31, 1986.
[23]張中良，“非導體表面之金屬化”，工業材料雜誌, Vol.112, pp. 86-92,1996.
[24]神戶德藏著，莊萬發譯著，“無電解鍍金”，