本論文是利用有機金屬氣相磊晶以選擇性佈植和選擇性再成長技術(regrowth)成長氮化鎵發光二極體。於再成長時磊晶層會先成長在非佈植區域而不是佈植區域，這主要是因為經過離子佈植後，佈植區與非佈植區之間產生了晶格差異，造成在佈植區和非佈植區上磊晶層的成長速率不同而導致選擇性成長。從元件製作的角度來看，此一技術可以省去一道乾式蝕刻製程，除此之外還可以因選擇性成長技術自然形成特定方向的晶格斜面，增加發光二極體發光效率。
在實驗結果方面，經由穿透式電子顯微鏡分析，證實再成長的磊晶層，不管是在佈植區或非佈植區上方皆為單晶，推測可能導致佈植區上方成長的起始點的原因有兩個:第一個為多重量子井中的Well層，即氮化銦鎵，第二個為 LED結構當中作為電子阻擋層(Electron Blocking Layer, EBL)的氮化鋁鎵（p-AlGaN）。
前述推論可由當結構是氮化鎵紫外光檢測器(無鋁、無銦)時，在佈植區上方並沒有再成長氮化鎵，由這個事實加以佐證，當我們結構為發光二極體時，再成長時佈植區會有氮化鎵材料成長上去，進而導致LED結構不是正常的p-n接面，影響後續發光二極體光電特性，而在無鋁、無銦的氮化鎵紫外光檢測器上就不會有這種問題發生。

In this thesis, ion implantation technique was applied to create selective-area and periodic patterns on GaN templates for the sequent growth of GaN-based LEDs. Selective-area growth (SAG) phenomenon of GaN epitaxial layers on the implanted GaN template(IGT) was attributed to the initial nucleation of GaN on the implantation-free regions rather than on the Si-implanted regions. That is, the GaN growth rate on the implanted regions was markedly lower than that on the implantation-free regions. The discrepancy in the growth rate was due to the different lattice constants between the implantation-free and the Si-implanted regions. In principle, the proposed approach could achieve oblique sidewall facets in the periphery of GaN-based LEDs for the improvement of light-extraction efficiency(LEE). In contrast to previous reports, the mask layer, such as SiO2, in this design was not necessary for achieving SAG of epitaxial layers on an n-GaN template layer. In addition, this approach has other advantages, including its simple processing and low cost due to the cut out of dry etching procedure. The detailed processing procedures and related results, including the electrical and optical properties of the fabricated LEDs, are discussed in following pparagraphes.

摘要 Ⅰ
ABSTRACT Ⅱ
致謝 Ⅲ
目錄 Ⅳ
表目錄 Ⅷ
圖目錄 Ⅸ
第一章 序論 1
1.1前言 1
1.2研究動機與目的 3
第二章 基礎理論、製程設備與量測儀器 6
2.1 發光二極體(Light Emitting Diodes, LEDs) 6
2.1.1 發光二極體(Light Emitting Diodes, LEDs)原理 6
2.1.2 光萃取效率(Light Extraction Efficiency, LEE)原理 7
2.1.3 傳輸線模型理論(Transmission Line Model, TLM) 9
2.2 離子佈植(Ion-implanted) 12
2.3 製程設備簡介 14
2.3.1 有機金屬氣相磊晶(Metal Organic Vapor Phase Epitaxy, MOVPE) 14
2.3.2 黃光微影(Photo lithography) 14
2.3.3 電子束蒸鍍機(Electron beam evaporator) 15
2.2.4 感應耦合式電漿 (Inductive Coupled Plasma, ICP) 15
2.2.4電漿輔助化學氣相沉積(Plasma Enhanced Chemical VaporDeposition, PECVD) 16
2.3.6 高溫爐管(Furnace) 16
2.4 量測儀器簡介 16
2.4.1 光輸出功率(Light Output Power, LOP)量測 16
2.4.2 電流與電壓(Current-Voltage, I-V)量測 17
2.4.3 掃描式電子顯微鏡(Scanning Electron Microscopy, SEM) 17
2.4.4高解析場發射掃描穿透式電子顯微鏡(High-Resolution Transmission Electron Microscopy, HR-TEM) 17
2.4.5微光顯微鏡(Emission microscope, EMMI) 18
第三章 實驗方法與製程步驟 19
3.1 選擇性佈植與再成長應用於氮化鎵發光二極體 19
3.1.1 選擇性佈植於n型氮化鎵製作 19
3.1.2 選擇性再成長氮化鎵發光二極體磊晶層 21
3.2選擇性佈植與再成長應用於氮化鎵發光二極體製程 22
3.2.1 透明導電薄膜層(TCL)製程 22
3.2.2 熱處理(Thermal Annealing)製程 24
3.2.3 金屬電極層製程 24
3.3 標準氮化鎵發光二極體製程 26
3.3.1高台蝕刻(Mesa etching)製程 26
3.3.2透明導電薄膜層(TCL)製程 28
3.3.3 熱處理(Thermal Annealing)製程 29
3.3.4 金屬電極層製程 30
3.2 選擇性佈植與再成長應用於無鋁(Al-free)氮化鎵發光二極體製程 32
3.4.1 透明導電薄膜層(TCL)製程 32
3.4.2 熱處理(Thermal Annealing)製程 33
3.4.3 金屬電極層製程 34
3.5 標準無鋁(Al-free)氮化鎵發光二極體製程 36
3.5.1高台蝕刻(Mesa etching)製程 36
3.5.2透明導電薄膜層(TCL)製程 37
3.5.3 熱處理(Thermal Annealing)製程 39
3.5.4 金屬電極層製程 39
第四章 實驗結果與討論 41
4.1 選擇性佈植和再成長氮化鎵發光二極體分析 41
4.2 選擇性佈植與選擇性再成長氮化鎵發光二極體光電分析 43
4.2.1 TLM量測 43
4.2.2 電壓-電流量測 43
4.2.3 微光顯微鏡量測 44
4.2.4 光輸出功率量測 44
4.3 選擇性佈植和再成長無鋁氮化鎵發光二極體分析 45
4.4 選擇性佈植和再成長無鋁氮化鎵發光二極體光電分析 47
4.4.1 TLM量測 47
4.4.2 電壓-電流量測 47
4.4.3 微光顯微鏡量測 48
4.4.3 光輸出功率量測 48
4.5 選擇性佈植和再成長氮化鎵紫外光檢測器 48
第五章 結論 49
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