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研究生:林聖淳
研究生(外文):Sheng-Chun Lin
論文名稱:在奈米多孔矽基板上沉積碳薄膜應用於紫外光感測器之研製
論文名稱(外文):Deposition of Carbon Thin Films on Nano-Porous-Silicon Substrates for Development of Ultra-Violet Sensing Devices
指導教授:吳坤憲
指導教授(外文):Kuen-Hsien Wu
學位類別:碩士
校院名稱:南台科技大學
系所名稱:光電工程系
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:102
畢業學年度:101
語文別:中文
中文關鍵詞:碳、奈米多孔矽、紫外光、光感測元件
外文關鍵詞:Carbide, Nano-Porous-Si ,ultra-violet, photo detector
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碳 (carbide, C)由於具有許多優越的特性,包括寬能隙、高電子移動率以及高飽和速率,因此成為現階段最有發展潛力的半導體材料,若吾人將碳直接成長於矽基板上,會遇到熱膨脹係數與晶格不匹配的困難。因此在本論文中,吾人使用奈米多孔矽(NPS)作為緩衝層,使碳薄膜可以成長在成本低廉的矽基板上,並以其為基礎來製作可檢測紫外光波長的光感測元件。
吾人使用重摻雜P+型矽晶片(1~5m-cm)作為製備奈米多孔矽之基板,並以低電流密度(10mA/cm2)之蝕刻參數製作出具有均勻分布之奈米矽顆粒之奈米多孔矽表層。然後以電子迴旋共振式電漿輔助化學氣相沈積法(ECR-CVD)在奈米多孔矽上沈積碳薄膜,作為主要之吸光層,最後鍍上指叉狀金屬電極(Al)以完成金-半-金(MSM) 結構之紫外光感測元件。
實驗結果顯示,碳薄膜成長在NPS基版上的結晶性比起成長在矽基版者更佳,且薄膜品質也比較好,另外一方面,吾人所製備的碳薄膜紫外光檢測元件光能隙可達約3.5eV,且對於300nm到400nm波長的入射光有非常高的響應度,在入射光波長為350nm下,碳薄膜紫外光感測元件之光/暗電流比可達約113,其光電流上升及衰減時間皆低於1秒,顯示此元件對於紫外光具有靈敏度與不錯的響應速度,實驗結果證明此元件於低成本之紫外光感測的應用上具有很大潛力。
Carbon (carbide, C) has many excellent features, including wide band gap, high electron mobility and high saturation velocity, so this stage the most development potential of the semiconductor material, if I used carbon grown directly on the Si substrate, will encounter difficulties coefficient of thermal expansion and the lattice mismatch. In this paper, I use the nano-porous silicon (NPS) as a buffer layer, the carbon film can grow in the low-cost silicon substrate, and its production can be detected based ultraviolet wavelengths of light sensing elements.
I use heavily doped p +-type silicon (1~5mΩ-cm) as preparation of nano-porous silicon substrate, and a low current density (10mA/cm2) etching parameters to produce a uniform distribution of nano-silicon particles Chennaimeters porous silicon film. And ECR-CVD deposition of carbon film, as the light-absorbing layer, and finally deposition the fork-shaped metal electrode (Al) of refers structure gold - half - gold (MSM) to the structure of UV sensing element.
Experimental results show that crystalline carbon thin film growth on the NPS-based version compared to the growth in the silicon version better, and the film quality is relatively good, on the other hand, I have prepared carbon film UV detection element optical energy gapup to approximately 3.5 eV, and 300nm to 400nm in wavelength of the incident light has a very high response in the wavelength of the incident light is 350nm, the carbon thin film ultraviolet light sensing element of the light / dark current ratio of up to about 113, the lightthe current rise and decay time are less than 1 second, this component UV sensitivity and good response speed, the experimental results show that this component has great potential for low-cost ultraviolet sensing applications.
目錄
中文摘要 I
英文摘要 II
誌謝 IV
目錄
第一章序論 1
1.1 前言 1
1.2 研究動機 4
第二章文獻回顧 5
2.1非晶質碳薄膜結構 4
2.2微波電子迴旋共振原理 6
2.3 多孔矽材料之簡介 7
2.4多孔矽之形成 8
2.5電壓電流特性曲線 10
2.6多孔矽之型態 12
2.7矽基材的型態、摻雜濃度與蝕刻之關係 12
2.8多孔矽的量子侷限效應 12
2.9吸收波長對多孔矽材料能隙的關係 14

第三章實驗方法 15
3.1 實驗流程圖 15
3.2 實驗設備 15
3.3 柰米多孔矽之製備 17
3.3.1 蝕刻基板之選擇 17
3.3.2 蝕刻前之基板表面預清洗 17
3.4 碳薄膜之熱處理 17
3.5實驗步驟 18
3.6量測與分析儀器 19
3.6.1 高解析掃瞄電子顯微鏡 20
3.6.2 X-Ray繞射基本理論 21
3.6.3 光響應頻譜量測系統 22
3.6.4 紫外光/可見光光譜儀 23
第四章結果與討論 24
4.1奈米多孔矽結構分析
4.1.1 蝕刻參數 24
4.1.2 奈米多孔矽型態SEM分析 24
4.2碳薄膜特性分析
4.2.1碳薄膜SEM分析 25
4.2.2碳薄膜沈積於不同緩衝層之X-Ray繞射分析 25
4.3碳薄膜薄膜及奈米多孔矽之光能隙 26
4.4元件之光電特性量測分析 26
4.4.1 元件之光頻譜響應分析 26
4.4.2 元件之I-V曲線量測與分析 27
4.4.3 元件之響應速度量測與分析 27
第五章結論 28
參考文獻 60
[1]M. Razeghi and A. Rogalski, J. Appl. Phys., vol.79, no.10, pp.7433-7473, 1996.
[2]E. Pace, R. Di Benedetto, S. Scuderi, Diamond and Related Materials, vol.9, pp.987-993, 2000.
[3]R. D. Mckeag, R. B. Jackman, Diamond and Related Materials, vol.7, pp.513-518, 1998.
[4]Y. G. Zhang, A. Z. Li and A. G. Milnes, IEEE Photonics Technology Letters, vol.9, no.3, pp.1768-1770, 1997.
[5]S Salvatori, F Scotti, G Conte and M. C. Rossi, Electronics Letters, vol.35, no.20, pp.1768-1770. 1999.
[6]C. J. Collins, U. Chowdhury, M. M. Wong, B. Yang, A. L. Beck, R. D. Dupuis and J. C. Campbell, Electronics Letters, vol.38, no.15, pp.824-826, 2002.
[7]A. N. Pikhtin, Member, S. A. Tarasov and Bernd Kloth, IEEE, vol.50, no.1, pp.215-217, 2003.
[8]Hadis Morkoc, Aldo Di Carlo, Roberto Cingolani,Solid-State Electronics, vol.46, pp.157-202, 2002.
[9]H. Morkoc, Solid-State Electronics, vol.46, pp.157-202, 2002.
[10]P. Sandvik, K. Mi, F. Shahedipour,R. McClintock, A. Yasan, P. Kung, M. Razeghi, Journal of Crystal Growth, vol. 231,pp.366-370, 2001.
[11]E. G Wang , Progress in Marterials Science, vol.47, pp.241-298, 1997.
[12]A.K.M.S, Chowdhury, M. Monclus, D.C. Cameron, J. Gilvarry, M.J. Murphy, N.P Barrades, M.S.J. Hashmi, Thin Solid Films, vol.130, pp.308-309, 1997.
[13]K.J. Boyd, D. Marton, S.S Todorov, A.H. Al-Bayati, J. Kulik, R.A. Zuhr, j.w. Rabalais, J. Vac. Sci. Tehnol. A, Applied Surface Science, vol.3, pp.264-269, 1994.
[14]X.-A. Zhao, C.W. Ong, Y.C. Tsang, Y.W. Wong, P.W. Chan, C.L. Choy, Appl. Phys. Lett, Applied Surface Science, vol.322, pp.245-253, 1998.
[15]Jin-Yu Wu, Cheng-Tzu Kuo, Po-Ju Yang, Materials Chemistry and Physics, vol.72, pp.245-250, 2001.
[16]S.L. Sung, C.H. Tseng, F.K. Chiang, X.J. Guo, X.W. Liu, H.C. Shih, Thin Solids Films, vol. 340, pp.169-174, 1999.
[17]Tohru Inoue, Shigeo Ohshio, Hidetoshi Saitoh, Kiichiro Kamate, Applied Physics Letters, vol.67, pp.353-355, 1995.
[18]A. Bousetta, M. Lu, A. Bensaoula, A. Schultz, Appl. Phys. Lett, vol.65, pp.696-698, 1994.
[19]J. Robertson, Adv. Phys., vol.35, pp.317-341, 1986.
[20]J. Robertson, Diamond Rel. Mater., vol.3, p.361, 1994.
[21]T. Frauenheim, P. Blaudeck, U. Stephan and G. Jungnickel, Phys. Rev. B, vol.48,pp.4823-4834, 1993.
[22]N. A. Marks, D. R. McKenzie, B. A. Pailthorpe, M. Bernasconi and M. Parrinello, Phys. Rev., vol.76, p.768, 1996.
[23]M. A. Lieberman, In Physics of thin films, edited by M. H. Francombe and J. L. Vossen (Academic Press, New York, 1994) pp.2-34 ,1994.
[24]J.L. Vossen, Physics of Thin Films,vol.9, p.1, 1977.
[25]Tsai, C., Li, K-H., Kinosky, D. S. Qian, R.-Z.,Hsu, T.-C., Irby, J.T. Banerjeee, S.K. Tasch, A.F., Campgell, J.C., Hance, B.K. and White, J.M., Applied Physics Letter, vol.60, Iss.14, pp.1700-1702, 1992.
[26]Perez, J.M., Villalobons, J., Mcneill, Prasad, J., Cheek, R., Kelber, J., Estrera, J.P., Stevens, P.D. and Glosser, R., Applied Physics Letter, vol.61, Iss.5, pp.563-565, 1992.
[27]Axel Richter, IEEE electron device letter, vol.12, Iss.12 pp.691-692, 1991.
[28]G. Smestad and H. Ries, Solar Energy Materials and Solar Cells, vol.26, Iss4, pp.563-565, 1992.
[29]S. E. Letant, S. Content, Tze Tsung Tan, F. Zenhausern, M. J. Sailor, Sensors and Actuators B, vol.69, pp.193-198, 2000.
[30]D.J. Lockwoodm G.C. Aers, L.B. Allard, B. Bryskiewicz, S. Charbonneau, D.C. Houghton, J.P. McCaffrey, and A. Wang, Can. J. Phys, vol.70, p.1184, 1992.
[31]J.R. Proot, C.Delerue, and G. Allen, Applied Physic Letter, vol.61, p.1948, 1992.
[32]A. Foucaran, B. Sorli, M. Garcia, F. Pascal-Delannoy, A. Boyer, Sensors and Actuators, vol.79, pp.189-193, 2000.
[33]S. Chan, P. M. Fauchet, Y. Li, L. J. Rothberg, and B. L. Miller, phys. Stat. Sol. A, vol.182, pp.541-546, 2000.
[34]G. T. Reed and A. K. Kewell, Materials Science and Engineering, vol.B40, pp.207-215, 1996.
[35]L. Boarino, etc., Microelectronics Journal, vol.30, pp.1149-1154, 1999.
[36]T. Unagami and K. Kato, Trans. IEE Jap, vol.98-A, No.10, p.15, 1978.
[37]V.Lemamn, U.Gosele, Applied Physic Letter, vol.58, p.856, 1991.
[38]X. G. Zhang, S. D. Collins, and R. L.Smith, J. Electrochem. Soc. vol.136, p.1561 ,1989.
[39]F. Ozaman, J. -N. Chazalviel, A. Radi, and M. Etman, Ber. Bunsenges. Phys. Chem., vol. 95, p.98 ,1991.
[40]M. J. Eddowes, J. Electroanal. Chem. vol.280, p.297 ,1990.
[41]H.Föll, Appl. Phys. A., vol.53, p.8 ,1991.
[42]V. Lehmann and U. Gosele, US. Patent., no.751, p.800, 1991.
[43]L. T. Canham. Applied Physics Letters, vol. 57. Iss.10, pp.1046-1048, 1990.
[44]I. Suemune, N. Noguchi, M. Yamanishi, Japan Journal Applied Physics, vol. 31, p.494, 1992.
[45]C. Y. Chan, A. Y. Cho, P. A. Grabinski, C. G. Bethea and B. F, Applied Physic Letter., p.340, 1981.
[46]R.J. Martin-Palma, R. Guerrero-Lemus, J.D. Moreno, J.M. Martinez-Duart, Solid-State Electron., vol.43(6), p.1153, 1999.
[47]M. K. Lee, Y. H. Wang, and C. H. Chu, IEEE Journal of Quantum Electronics, vol. 33, p.2199, 1997.
[48]J.H. Kim, H.K. Baik, Solid State Commun, vol.104, p.653 ,1997.
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