本研究在ITO/Glass基板上，以射頻磁控濺鍍法沉積MnO薄膜作為絕緣層，接著在表面沉積鋁(Al)做為上電極，形成金屬/絕緣層/金屬(MIM)結構之電阻式記憶體。利用不同氧氣濃度與不同退火條件(未退火、傳統式熱退火(CTA)、快速熱退火(RTA))來進行比較與分析。從XRD與SEM中發現在氧氣濃度40%時，其晶向(111)有最強的峰值與均勻且較大的晶粒(大約3.5nm).且在RTA退火(氧氣濃度40%)有最好的電阻切換率與最佳的ON/OFF比值(3 orders)。但因為CTA退火(氧氣濃度40%)時間較長所以可以獲得最佳的耐久度。最後我們從電流傳導機制的趨勢得到結論，RRAM在退火過程中可以改善晶粒成長以及有效填補氧空缺，並且可以提高電阻切換特性。

On the ITO/Glass substrate, the RF magnetron sputtering method was used to coat a MnO thin film as the insulating layer. Then the Aluminum (Al) was coated on the thin film as a top electrode to form a Metal/Insulator/Metal (MIM) resistance random access memory structure. Different oxygen concentrations and annealing conditions (no annealing, conventional thermal annealing, and rapid thermal annealing) were compared and investigated in this thesis. It can be observed from the XRD and SEM that as the oxygen concentration is 40 %, the (111) peak is enhanced and larger and uniform grains can be obtained (about 3.5 nm). Moreover, better I-V characteristics and optimum ON/OFF ratio (3 orders) can also be obtained for the 40 % oxygen concentration (rapid thermal annealing). But the optimum fatigue was obtained from the conventional thermal annealing (40% oxygen concentration). Longer annealing period of the conventional thermal annealing processes is the reason. Finally, from the tendency of the current conduction mechanism, it can be concluded that the annealing processes can improve grains growth and oxygen vacancy effectively, and which also improve the resistive switching characteristics of RRAM.

摘 要 II
ABSTRACT III
致 謝 IV
目 次 V
表目錄 VII
圖目錄 VIII
第一章 緒論 1
1-1 前言 1
1-2 電阻式記憶體 2
1-3 研究動機 2
第二章 理論分析 3
2-1 電阻式記憶體操作機制 3
2-1.1 限制電流定義 3
2-1.2 單極性轉換(Unipolar Switching) 3
2-1.2 雙極性轉換(Bipolar Switching) 3
2-2電阻轉換機制 3
2-2.1 電阻絲理論 4
2-2.2 Mott 轉變 5
2-3漏電流導電機制 5
2-3.1 歐姆傳導(Ohmic Conduction) 5
2-3.2 空間電荷限制電流(Space-Charge Limited Conduction) 6
2-3.3 蕭特基發射(Schottky Emission) 6
　　2-3.4 普爾-法蘭克發射(Poole-Frenkel Emission)..................................................7
第三章 實驗步驟 8
3-1 薄膜製備 8
3-1.1 氧化錳(MnO)靶材的製作 8
3-1.2 射頻磁控濺鍍系統與薄膜沉積 8
3-1.3 MIM結構製作流程 8
3-1.4 CTA管狀高溫爐退火處理 9
3-1.5 RTA快速熱退火處理 9
3-2 薄膜物理與電性分析設備 9
3-2.1 X光繞射(XRD)分析 9
3-2.2 場發射掃描式電子顯微鏡分析(FE-SEM) 10
3-2.3 電流-電壓(I-V)量測 10
第四章 結果與討論 11
4-1 MnO薄膜在通入不同氣體比例濃度之影響 11
4-1.1氬氣(Ar)與氧氣(O2)比例濃度之影響 11
4-1.2 X光繞射(XRD)分析 11
4-1.3 場發射掃描式電子顯微鏡(FE-SEM)分析 11
4-1.4 電流-電壓(I-V)特性分析 12
4-1.5 漏電流機制分析 12
4-2 MnO薄膜以不同熱退火處理之影響 13
(一) CTA熱退火處理後之特性分析 14
4-2.1 X光繞射(XRD)分析 14
4-2.2 場發射掃描式電子顯微鏡(FE-SEM)分析 14
4-2.3 電流-電壓(I-V)特性分析 14
4-2.4 漏電流機制分析 14
(二) RTA熱退火處理後之特性分析 16
4-3.1 X光繞射(XRD)分析 16
4-3.2 場發射掃描式電子顯微鏡(FE-SEM)分析 16
4-3.3 電流-電壓(I-V)特性分析 16
4-3.4 漏電流機制分析 17
第五章 結論 19
5-1結論 19
5-1.1不同氧氣濃度比例之分析(未退火) 19
5-1.2 CTA退火不同溫度之分析 19
5-1.3 RTA退火不同溫度之分析 20
5-2未來展望 20
參考文獻 21

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