臺灣博碩士論文加值系統

近年來電子產業的發達，半導體元件扮演重要角色，本論文主要針對半導體製程離子佈植來改善元件特性。
砷化鎵(GaAs)材料是研究最能理解的化合物半導體，具有高頻、低雜訊、高效能極低耗電特性，並已應用光電元件和高頻通訊用元件，行動電話、無線網路應用主要零件，市場目前算是主導化合物半導體產業的方向，就以砷化鎵IC的效果最好。研究在不更動製程尺寸下，利用離子佈植方式使得元件得到最佳化元件特性。使用Silvaco TCAD模擬，所採用的基底結構為砷化鎵(GaAs)，經過最佳化方式的離子佈植使平面閘極場效電晶體得到最佳特性。經由固定P型濃度摻雜改變摻雜能量得到最佳之P行參雜能量80keV，進而對N型摻雜能量作最佳化得到最佳之場效電晶體摻雜濃度與摻雜能量100keV。得到之最大0.28mA汲極電流與電壓控制範圍。

In recent years, semiconductor components provided an important role in the development of the electronics industry. This article will focus on the semiconductor manufacturing ion implantation process to improve the device characteristics.
Gallium Arsenide (GaAs) materials are the most understood compound in semiconductors. It has high-frequency, low-noise, and high performance with extremely low power consumption features. Its current applications include optoelectronics and high-frequency components for communications, mobile phones, and wireless internet applications. Moreover, the current market is leading the direction of the semiconductor industry with the best GaAs IC. The research will progress without a change in size and using ion implantation method to achieve the best characteristics for the device. Using Silvaco TCAD simulation, a GaAs substrate was used to undergo an optimal ion implantation method to produce the optimum properties for a plane gate field effect transistor. It made use of a fixed concentration P-type doping to change its dopant energy and achieve an optimum dopant energy of 80keV. Subsequently, adjustments were made to optimize the N-type dopant energy to achieve the optimal doping concentration for the field effect transistor and attain a dopant energy of 100keV. Results showed that the current method was able to achieve the largest drain current of 0.28mA and keeping the voltage within the control range.

摘要................................................................................................................................. iv
誌謝................................................................................................................................. vi
目錄……..........................................................................................................................vii
圖目錄..............................................................................................................................ix
表目錄..............................................................................................................................xi
第一章 緒論...................................................................................................................1
1.1 前言...............................................................................................................1
1.2 研究動機.......................................................................................................1
1.3 論文架構.......................................................................................................2
第二章 模擬軟體介紹...................................................................................................3
2.1 模擬軟體…..................................................................................................3
2.1.1ATLAS軟體模擬系統組件..................................................................4
2.2物理模型.……..………….………...............................................................6
2.3載子複合模型...............................................................................................8
2.4 穿隧接面模型..............................................................................................9
2.5邊界條件.....................................................................................................10
2.6 ATHENA 製程模擬系統...........................................................................11
2.7 ATHENA 軟體模擬系統組件...................................................................11
第三章 離子佈植對場效電晶體之模擬.....................................................................14
3.1 平面閘極砷化鎵場效電晶體結構需求與原理說明................................14
3.2 平面閘極砷化鎵場效電晶體結構的建立與模擬......................................15
3.2.1結構建立............................................................................................15
3.2.2 物理特性模擬...................................................................................20
3.3 特性最佳化..................................................................................................22
3.3.1 P型離子佈植最佳化.........................................................................22
3.3.2 N通道離子佈植最佳化....................................................................28
第四章 結果與討論.......................................................................................................37
參考文獻.........................................................................................................................38
作者簡介.........................................................................................................................39

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