(44.192.70.216) 您好!臺灣時間:2021/05/09 19:36
字體大小: 字級放大   字級縮小   預設字形  
回查詢結果

詳目顯示:::

我願授權國圖
: 
twitterline
研究生:陳力源
研究生(外文):Chen li-yuan
論文名稱:離子佈植製程參數對場效電晶體元件特性之模擬分析
論文名稱(外文):Analysis of Ion Implantation Manufacturing Parameters for Field Effect Transistor Device
指導教授:張文俊張文俊引用關係
指導教授(外文):Chang wen-chung
學位類別:碩士
校院名稱:南台科技大學
系所名稱:電子工程系
學門:工程學門
學類:電資工程學類
論文種類:學術論文
畢業學年度:101
語文別:中文
論文頁數:39
中文關鍵詞:砷化鎵場效電晶體離子佈植
外文關鍵詞:GaAsField effect transistorIon implantation
相關次數:
  • 被引用被引用:0
  • 點閱點閱:120
  • 評分評分:系統版面圖檔系統版面圖檔系統版面圖檔系統版面圖檔系統版面圖檔
  • 下載下載:7
  • 收藏至我的研究室書目清單書目收藏:0
近年來電子產業的發達,半導體元件扮演重要角色,本論文主要針對半導體製程離子佈植來改善元件特性。
砷化鎵(GaAs)材料是研究最能理解的化合物半導體,具有高頻、低雜訊、高效能極低耗電特性,並已應用光電元件和高頻通訊用元件,行動電話、無線網路應用主要零件,市場目前算是主導化合物半導體產業的方向,就以砷化鎵IC的效果最好。研究在不更動製程尺寸下,利用離子佈植方式使得元件得到最佳化元件特性。使用Silvaco TCAD模擬,所採用的基底結構為砷化鎵(GaAs),經過最佳化方式的離子佈植使平面閘極場效電晶體得到最佳特性。經由固定P型濃度摻雜改變摻雜能量得到最佳之P行參雜能量80keV,進而對N型摻雜能量作最佳化得到最佳之場效電晶體摻雜濃度與摻雜能量100keV。得到之最大0.28mA汲極電流與電壓控制範圍。
In recent years, semiconductor components provided an important role in the development of the electronics industry. This article will focus on the semiconductor manufacturing ion implantation process to improve the device characteristics.
Gallium Arsenide (GaAs) materials are the most understood compound in semiconductors. It has high-frequency, low-noise, and high performance with extremely low power consumption features. Its current applications include optoelectronics and high-frequency components for communications, mobile phones, and wireless internet applications. Moreover, the current market is leading the direction of the semiconductor industry with the best GaAs IC. The research will progress without a change in size and using ion implantation method to achieve the best characteristics for the device. Using Silvaco TCAD simulation, a GaAs substrate was used to undergo an optimal ion implantation method to produce the optimum properties for a plane gate field effect transistor. It made use of a fixed concentration P-type doping to change its dopant energy and achieve an optimum dopant energy of 80keV. Subsequently, adjustments were made to optimize the N-type dopant energy to achieve the optimal doping concentration for the field effect transistor and attain a dopant energy of 100keV. Results showed that the current method was able to achieve the largest drain current of 0.28mA and keeping the voltage within the control range.
摘要................................................................................................................................. iv
誌謝................................................................................................................................. vi
目錄……..........................................................................................................................vii
圖目錄..............................................................................................................................ix
表目錄..............................................................................................................................xi
第一章 緒論...................................................................................................................1
1.1 前言...............................................................................................................1
1.2 研究動機.......................................................................................................1
1.3 論文架構.......................................................................................................2
第二章 模擬軟體介紹...................................................................................................3
2.1 模擬軟體…..................................................................................................3
2.1.1ATLAS軟體模擬系統組件..................................................................4
2.2物理模型.……..………….………...............................................................6
2.3載子複合模型...............................................................................................8
2.4 穿隧接面模型..............................................................................................9
2.5邊界條件.....................................................................................................10
2.6 ATHENA 製程模擬系統...........................................................................11
2.7 ATHENA 軟體模擬系統組件...................................................................11
第三章 離子佈植對場效電晶體之模擬.....................................................................14
3.1 平面閘極砷化鎵場效電晶體結構需求與原理說明................................14
3.2 平面閘極砷化鎵場效電晶體結構的建立與模擬......................................15
3.2.1結構建立............................................................................................15
3.2.2 物理特性模擬...................................................................................20
3.3 特性最佳化..................................................................................................22
3.3.1 P型離子佈植最佳化.........................................................................22
3.3.2 N通道離子佈植最佳化....................................................................28
第四章 結果與討論.......................................................................................................37
參考文獻.........................................................................................................................38
作者簡介.........................................................................................................................39
1.本城和彥, “微波通訊半導體電路”, 全華出版社, 1996.
2.陳力源, “場效電晶體閘極下方植入非對稱氧化層之模擬分析”, 彰雲嘉大學校院聯盟學術研討會, 2012.
3.SILVACO International Inc, “ATLAS User’s Manual”, Santa Clara, CA, 2007.
4.B. Mack, M. Hermle, S. Philipps, A.W. Bett, “Simulation of the tunneling current in heavily doped PN-junctions,” Presented at the 21st European Photovoltaic Solar Energy Conference, September 4-8, 2006, Dresden,1DV.1.9.
5.王藜樺, “串接式太陽電池模擬研究”, 國立清華大學光電工程研究所碩士論文,民97.
6.楊明儒, “半導體製程改良修正對太陽能電池與場效電晶體性能之影響與模擬” , 南台科技大學電子工程研究所博士論文,民101.
7.C. A. Mead:“Schottky Barrier Gate Field Effect Transistor,” Proc. IEEE, 54, pp.307-308, 1966.
8.Donald A. Neamen 著/李世鴻,陳勝利譯, “半導體物理元件”, 臺北市/麥格羅希爾出版, 1998.
9.施敏, “半導體元件物理與製作技術”, 交大出版社, 2002.
10.S, M, Sze, “VLSI Technology”, Ch. 7 Ion-Implantation, p. 327.
11.K.Lehovec and R.Zuleeg:“Voltage-current characteristics of GaAs J-FET’s in the hot electron range,” Solid-state Electron. 13, pp1415-1426(1970).
12.W.Shockley:“A unipolar ‘field-effect’ transistor,” Proceedings of IRE,40.PP1365-1376(NOV,1952).
13.M. Heiblum, M. I. Nathan, and C. A. Chang, “Characteristics of AuGeNi Ohmic Contact to GaAs,” Solid State Electronics, Vol. 11,No.6, p.2505, 1993.
電子全文 電子全文(本篇電子全文限研究生所屬學校校內系統及IP範圍內開放)
連結至畢業學校之論文網頁點我開啟連結
註: 此連結為研究生畢業學校所提供,不一定有電子全文可供下載,若連結有誤,請點選上方之〝勘誤回報〞功能,我們會盡快修正,謝謝!
QRCODE
 
 
 
 
 
                                                                                                                                                                                                                                                                                                                                                                                                               
第一頁 上一頁 下一頁 最後一頁 top
無相關期刊
 
系統版面圖檔 系統版面圖檔